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Drain Efficiency (drain + efficiency)

Distribution by Scientific Domains

Engineering	100%

Selected Abstracts

Theoretical facet and experimental results of harmonic tuned PAs

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 6 2003
Paolo Colantonio
Abstract High-efficiency power amplifier design criteria imply a synthesis of input and output networks with particular emphasis on their harmonic behavior. In this article, a simplified approach to clarify the relevance of such terminations is presented. Starting from the implications of power balance for stage performance, design criteria to improve the efficiency of high-frequency applications are presented. In order to validate the approach, comparisons among the performances of single-stage amplifiers, all operated at 5 GHz under a sinusoidal driving signal and synthesized by utilizing different design methodologies, are presented. Drain efficiencies at 1-dB compression of 44.5%, 53.3%, and 61.56% have been measured respectively for the tuned load and harmonically manipulated (2nd and 2nd & 3rd) realized amplifiers, compared with a simulated drain efficiency of 55% using the Class E approach. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 459,472, 2003. [source]

An efficient CMOS power-combining technique with differential and single-ended power amplifier

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 10 2010
Eunil Cho
Abstract This article proposes an efficient power-combining architecture with differential and single-ended power amplifiers (PAs) in a CMOS process. The single-ended amplifier is added for overall efficiency enhancement. To demonstrate this concept, a CMOS PA using the proposed architecture was fabricated with a 0.13-,m CMOS technology that delivers 30.6 dBm of output power with 42% drain efficiency and 38% power-added efficiency at 1.95 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2214,2217, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25460 [source]

A 40-W balanced GaN HEMT class-E power amplifier with 71% efficiency for WCDMA base station

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2009
Yong-Sub Lee
Abstract A balanced class-E power amplifier (PA) using a push-pull GaN HEMT for high power and high efficiency is represented. For validation, a class-E PA is designed and implemented using a push-pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the balanced GaN HEMT class-E PA shows a drain efficiency and power-added efficiency (PAE) of 71% and 67.4% at an output power of 40 W with a gain of 13 dB through the significant harmonic suppression of below ,51 dBc. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 842,845, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24150 [source]

A 1-GHz GaN HEMT based class-E power amplifier with 80% efficiency

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2008
Yong-Sub Lee
Abstract This article reports a highly efficient 1-GHz class-E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. The peak PAE and drain efficiency of 79.2 and 80.4% with a power gain of 18.14 dB is achieved at an output power of 41.14 dBm for a continuous wave. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2989,2992, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23803 [source]

Linearity-optimized GaN HEMT Doherty amplifiers using derivative superposition technique for WCDMA applications

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2008
Yong-Sub Lee
Abstract Gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty amplifiers with the optimized linearity for wide-band code division multiple access (WCDMA) applications are represented. At a 7-dB back-off output power, the measured single-carrier WCDMA results show two-way and three-way GaN HEMT Doherty amplifiers with an adjacent channel leakage ratio (ACLR) of ,43.2 and ,48.2 dBc at ±2.5 MHz offset frequency with a drain efficiency of 43.1% and 30.9%, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 701,705, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23181 [source]

DC or pulse I(V) measurements to simulate transmission line class E power amplifiers

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 9 2006
J. R. Loo-Yau
Abstract In FET I(V) nonlinear modeling, the I(V) experimental data are important because they allow one to determine the initial values of the empirical nonlinear model. Pulsed I(V) are preferred over DC measurements because of dispersion phenomena. However, the simulation of a class E PA using I(V) empirical nonlinear model constructed from DC or pulsed measurements to predicts values of PAE, gain, and efficiency are similar. Although this fact can be predictable or evident, because the transistor works in the region where heating and dispersion effects are small, this has not been experimentally demonstrated yet. Therefore the main purpose of this work is to determine whether pulse or DC I(V) measurements are suitable to develop the nonlinear model in order to predict the main features of a transmission line class E PA as Pout, drain efficiency, and PAE. The simulations using both types of data were compared with two experimental transmission line class E PA, designed at 0.8 and 1.9 GHz. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48:1886,1890, 2006; Published online in Wiley InterScience (www.interscience.wiley.com(. DOI 10.1002/mop.21794 [source]