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Direct Patterning (direct + patterning)
Selected Abstracts"Dry" Patterning: Direct Patterning of Organic-Thin-Film-Transistor Arrays via a "Dry-Taping" Approach (Adv. Mater.ADVANCED MATERIALS, Issue 12 200912/2009) The cover shows the patterning of several solution- and vapor-deposited small molecule organic semiconductors using a dry taping approach. Zhenan Bao and co-workers demonstrate on page 1266 that this technique allows direct fabrication of large area arrays of bottom-contact high-performance organic thin-film field-effect transistors with self-aligned electrodes. Patterned devices exhibit significantly higher On/Off ratios and lower parasitic leakage than unpatterned ones. [source] Direct Patterning of Organic-Thin-Film-Transistor Arrays via a "Dry-Taping" ApproachADVANCED MATERIALS, Issue 12 2009Shuhong Liu Dry patterning of a variety of solution- and vapor-deposited small-molecule organic semiconductors using adhesive tape is demonstrated. This technique allows direct fabrication of large-area arrays of bottom-contact high-performance organic- thin-film field-effect transistors with self-aligned electrodes. These patterned devices exhibit significantly higher on/off ratios and lower parasitic leakage currents than control unpatterned devices of the same materials. [source] Lithographic Alignment of Discotic Liquid Crystals: A New Time,Temperature Integrating FrameworkADVANCED MATERIALS, Issue 46 2009Massimiliano Cavallini Liquid crystals are a successful example of how the control of self-assembly via chemical design leads to novel applications. Direct patterning of a continuous metal-free mesogenic phthalocyanine film (discotick liquid crystals) is shown by the spatial control of columns orientation by unconventional lithography. These patterned films work as time,temperature integrators at a columnar rectangular,hexagonal transition temperature. [source] Fabrication of Advanced Functional Devices Combining Soft Chemistry with X-ray Lithography in One StepADVANCED MATERIALS, Issue 48 2009Paolo Falcaro Deep X-ray lithography combined with sol,gel techniques offers facile fabrication of controlled patterned films. Using sol,gel, different functional properties can be induced; deep X-ray lithography alters the functionality in the exposed regions. Miniaturized devices based on local property changes are easily fabricated: this technique requires no resist, enabling direct patterning of films in a one-step lithographic process. [source] Liquid-Crystal Patterning: Lithographic Alignment of Discotic Liquid Crystals: A New Time,Temperature Integrating Framework (Adv. Mater.ADVANCED MATERIALS, Issue 46 200946/2009) Liquid crystals are a successful example of how the control of self-assembly via chemical design leads to novel applications. Massimiliano Cavallini, Fabio Biscari, and co-workers report on p. 4688 that direct patterning of a continuous metal-free mesogenic phthalocyanine film (discotic LCs) is achieved by spatial control of column orientation using unconventional lithography. These patterned films work as time,temperature integrators at the columnar rectangular,hexagonal transition temperature. [source] Observation of light-induced localized domain-inversion pattern formation in KNbO3JOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 2 2009Yunlin Chen It is demonstrated that high-intensity illumination with an Ar-ion laser beam can generate domain-inversion patterning in KNbO3 crystals. With a special laser-assisted micro-manipulation platform, direct patterning of domain-inversion structures without applying any external electric field can be carried out. The domain-nucleation process has been observed, and the process is purely optical, localized, and potentially controllable both in size and in orientation. [source] On-Site Fabrication of Crystalline Cerium Oxide Films and Patterns by Ink-Jet Deposition Method at Moderate TemperaturesJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 7 2008Ruwan Gallage Crystalline CeO2 films and patterns have been successfully fabricated in a "single-step process" at moderate temperature. In this process, the combination of the ink-jet technique and depositing the precursor on a hot substrate (,300°C) gave crystalline CeO2 without further heat treatment. X-ray diffraction analysis revealed that the phase formed was crystallized ceria with nanosized (<10 nm) crystallites. The film thickness was several hundred nanometers and the pattern width was about 150 ,m. Scanning electron microscopy analysis showed that the films and patterns were free of cracks and adhered to the substrate. This is the first report about the direct patterning of crystalline CeO2 without postfiring or posttreatments like masking, etching, etc. [source] |