Home About us Contact
|
Home About us Contact | ||
|
|
||
Different Growth Conditions (different + growth_condition)
Selected AbstractsGrowth of ZnO crystals by vapour transport: Some ways to act on physical propertiesCRYSTAL RESEARCH AND TECHNOLOGY, Issue 8 2006R. Tena-Zaera Abstract Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of as-grown ZnO crystals can be changed in a controlled way by an adequate combination of different growth conditions such as graphite covering of inner ampoule walls, thermal difference between source material and crystallization zone and additional gas (composition and pressure). In this frame some post-growth annealing processes can be avoided reducing the time and cost of processes. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Growth of bismuth tri-iodide platelets by the physical vapor deposition methodCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2004A. Cuña Abstract The work reports the growth of single BI3 crystals with platelets habit. Platelets were grown by physical vapor deposition (PVD) in a high vacuum atmosphere and with argon, polymer or iodine as additives. Crystals grew in the zone of maximum temperature gradient, perpendicular to the ampoule wall. Crystals grown with argon as additive show a very shining surface, have hexagonal (0 0 l) faces, sizes up to 20 x 10 mm2 and thicknesses up to 100 ,m. They were characterized by optical microscopy and scanning electron microscopy (SEM). Dendritic-like structures were found to be their main surface defect. SEM indicates that they grow from the staking of hexagonal unities. Electrical properties of the crystals grown under different growth conditions were determined. Resistivities up to 2 x 1012 ,cm (the best reported value for monocrystals of this material) were obtained. X-ray response was measured by irradiation of the platelets with a 241Am source of 3.5 mR/h. A comparison of results according to the growth conditions was made. Properties of the crystals grown by this method are compared with the ones measured for others previously grown from the melt. Also, results for bismuth tri-iodide platelets are compared with the ones obtained for mercuric and lead iodide platelets. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Aspergillus oryzae in solid-state and submerged fermentationsFEMS YEAST RESEARCH, Issue 2 2002Progress report on a multi-disciplinary project Abstract We report the progress of a multi-disciplinary research project on solid-state fermentation (SSF) of the filamentous fungus Aspergillus oryzae. The molecular and physiological aspects of the fungus in submerged fermentation (SmF) and SSF are compared and we observe a number of differences correlated with the different growth conditions. First, the aerial hyphae which occur only in SSFs are mainly responsible for oxygen uptake. Second, SSF is characterised by gradients in temperature, water activity and nutrient concentration, and inside the hyphae different polyols are accumulating. Third, pelleted growth in SmF and mycelial growth in SSF show different gene expression and protein secretion patterns. With this approach we aim to expand our knowledge of mechanisms of fungal growth on solid substrates and to exploit the biotechnological applications. [source] Protein kinase A subunits of the ascomycete pathogen Mycosphaerella graminicola regulate asexual fructification, filamentation, melanization and osmosensingMOLECULAR PLANT PATHOLOGY, Issue 6 2006RAHIM MEHRABI SUMMARY As in many fungi, asexual reproduction of Mycosphaerella graminicola in planta is a complex process that requires proper differentiation of the infectious hyphae in the substomatal cavities of foliar tissue before pycnidia with conidia can be formed. In this study, we have investigated the role of the cAMP signalling pathway in development and pathogenicity of this pathogen by disruption of the genes encoding the catalytic (designated MgTpk2) and regulatory subunit (designated MgBcy1) of protein kinase A. The MgTpk2 and MgBcy1 mutants showed altered phenotypes in vitro when grown under different growth conditions. On potato dextrose agar (PDA), MgBcy1 mutants showed altered osmosensitivity and reduced melanization, whereas the MgTpk2 mutants showed accelerated melanization when compared with the M. graminicola IPO323 wild-type strain and ectopic transformants. MgTpk2 mutants also secreted a dark-brown pigment into yeast glucose broth medium. In germination and microconidiation assays, both mutants showed a germination pattern similar to that of the controls on water agar, whereas on PDA filamentous growth of MgTpk2 mutants was impaired. Pathogenicity assays showed that the MgTpk2 and MgBcy1 mutants were less virulent as they caused only limited chlorotic and necrotic symptoms at the tips of the inoculated leaves. Further analyses of the infection process showed that MgTpk2 and MgBcy1 mutants were able to germinate, penetrate and colonize mesophyll tissue, but were unable to produce the asexual fructifications, which was particularly due to inappropriate differentiation during the late stage of this morphogenesis-related process. [source] Three-dimensional ordering in self-organized (In,Ga)As quantum dot multilayer structuresPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2009V. Kladko Abstract Molecular beam epitaxy (MBE) grown In0.5Ga0.5As/GaAs multilayer structures with quantum dots chains (QDs), obtained under different growth conditions, were investigated by high-resolution X-ray diffractometry (HRXRD) and AFM. It was determined that self-organized epitaxial growth of In0.5Ga0.5As/GaAs can lead to the formation of three-dimensional quantum-dot crystals with triclinic (distorted cubic) unit cell. The mechanisms of QDs ordering in dependence on As flux are analyzed. [source] Growth kinetics of AlxGa1,xN layers (0 < x < 1) in plasma-assisted molecular beam epitaxyPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010A. M. Mizerov Abstract Comparative study of growth kinetics of the AlxGa1-xN (x = 0-1) layers of different polarity, grown by plasma assisted molecular beam epitaxy (PA MBE) under different growth conditions (substrate temperature, group III to activated nitrogen and Al to Ga flux ratios) and on different buffer layers, is presented. The 60 °C higher temperature stability of N-face AlGaN layers is detected. The strong influence of elastic stress on growth kinetics of metal-polar AlxGa1-xN (x > 0.2) layers is observed and discussed. It was found that two-dimensional growth of AlGaN films of the same composition on different buffer layers at TS = 700 °C can be achieved at different group III surface enrichment, the AlGaN(0001)/c-Al2O3 films exhibiting the atomically smooth surface at group III to activated nitrogen flux ratio FIII/FN *gradually increased from 1.3 to 2 with the x variation from 0.1 to 0.8. In this case the alloy composition is controlled by the variation of Al flux only (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxyPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2008D. Dagnelund Abstract A detailed study of the impact of different growth conditions (i.e. ion bombardment, nitrogen flow and In content) on the defect formation in Ga(In)NP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is performed. Reduced nitrogen ion bombardment during the growth is shown to significantly reduce formation of defects acting as competing recombination centers, such as a Ga interstitial defect and other unidentified defects revealed by optically detected magnetic resonance. Further, high nitrogen flow is found to be even more effective than the ion bombardment in introducing the defects. The incorporation of In by 5.1% is, on the other hand, found not to affect the introduction of defects. The results provide a useful insight into the formation mechanism of the defects that will hopefully shed light on a control of the defect introduction in the alloys by optimizing growth conditions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Induction of proliferation and differentiation of cultured urothelial cells on acellular biomaterialsBJU INTERNATIONAL, Issue 6 2004Gouya Ram-Liebig OBJECTIVE To determine the optimum conditions for the proliferation of urothelial cells, leading to the confluent coverage of large surfaces of biocompatible membranes, and for their terminal differentiation. MATERIALS AND METHODS Porcine and human urothelial cells were cultured on different matrices under different growth conditions. Proliferative activity and the viability of cells were evaluated using fluorescent markers for nuclei and cytoplasm. Growth and differentiation were assessed by histological, histochemical and immunohistochemical methods. RESULTS Under fibroblastic induction and supplementation of 5% fetal calf serum (FCS), urothelial cells showed more proliferation than in other conditions tested. Terminal differentiation of superficial cells was achieved by lowering the concentration of FCS to 1% at the air,liquid interface. CONCLUSIONS The mitogenic effects of the extracellular matrix content of biological membranes and fibroblastic inductive factors are synergistic with each other, and can compensate for a low FCS concentration and the absence of other additives. Lowering the FCS concentration to 1% inhibits the proliferation of urothelial cells and permits their terminal differentiation. [source] | |||||||||||||