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Device Models (device + models)
Selected AbstractsRole of the temperature distribution on the PN junction behaviour in the electro-thermal simulationINTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 6 2004Hatem Garrab Abstract Electro-thermal simulations of a PIN-diode based on the finite-element method, show a non-uniform temperature distribution inside the device during switching transients. Hence, the implicit assumption of a uniform temperature distribution when coupling an analytical electrical model and a thermal model yields inaccurate electro-thermal behaviour of the PIN-diode so far. The idea of including non-uniform temperature distribution into power semiconductor device models is not new, as accurate electro-thermal simulations are required for designing compact power electronic systems (as IC or MCM). Instead of using a one-dimensional finite difference or element method, the bond graphs and the hydrodynamic method are utilized to build an electro-thermal model of the PIN-diode. The results obtained by this original technique are compared with those obtained by a commercial finite-element simulator. The results are similar but the computation effort of the proposed technique is a fraction of that required by finite-element simulators. Moreover, the proposed technique may be applied easily to other power semiconductor devices. Copyright © 2004 John Wiley & Sons, Ltd. [source] Frequency-multiplier design using negative-image device modelsMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 11 2010Nam-Tae Kim Abstract This article presents a novel design methodology for wireless frequency multipliers using negative-image device models applicable to nonlinear devices. Negative-image device models of nonlinear devices are generated by incorporating optimization techniques into a hypothetical negative-image multiplier model. The negative-image device-modeling methodology provides the following advantages over previously developed techniques: (1) It can predict achievable multiplier performance in the device-modeling stage and (2) it provides an accurate starting point for the synthesis of impedance-matching networks. The negative-image device-modeling method is described, and its application to the design of a field-effect transistor (FET) frequency multiplier is presented. Results of an experimental implementation of the multiplier demonstrate the effectiveness of the proposed methodology. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2544,2548, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25521 [source] Modeled performance of polycrystalline thin-film tandem solar cells,PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 3 2002Timothy J. Coutts The optimum bandgaps for two-terminal monolithic multijunction devices have typically been studied under a fixed set of environmental conditions, using ideal device models. This study examines the effects of a realistic dark-current for typical state-of-the-art thin-film polycrystalline cells on the optimum energy gap for a series-connected two-junction cell. The optimum energy gaps are compared for a series-connected tandem cell under standard reference conditions and the energy produced for five different reference days where the temperature, spectral irradiance and total irradiance varied. The optimum bandgaps were found to be 1.72,±,0.02,eV for the top cell and 1.14,±,0.02,eV for the bottom cell. Published in 2002 by John Wiley & Sons, Ltd. [source] | ||||||||||