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Deep Level Transient Spectroscopy (deep + level_transient_spectroscopy)
Selected AbstractsLaplace DLTS of molecular beam epitaxy GaAs grown on (100) and (211)B substratesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2009R. H. Mari Abstract Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS (LDLTS) techniques have been employed to study defects in n-type GaAs grown by MBE on (100) and (211)B GaAs planes. The DLTS spectra were different for the two GaAs substrate orientations. Five and four defect states are found in samples grown on (100) and (211)B GaAs planes, respectively with activation energies ranging from 0.054 eV to 0.570 eV. For all of the traps observed in our samples we obtained small activation energies as compared to the previous data published in literature on n-GaAs samples grown by MBE. This can be explained by the fact that the emission of the carriers depends on the applied electric field and temperature dependence of the carrier concentration. These two phenomena seem to explain the small trap energies seen in our samples. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Investigation of defects in organic semiconductors by charge based Deep Level Transient Spectroscopy (Q-DLTS)PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2009T. P. Nguyen Abstract We report the results of measurements of traps in light emitting devices using a new derivative of poly(phenylene vinylene) (PPV) as an active material by the charge based Deep Level Transient Spectroscopy (Q-DLTS) technique. Diodes of structure Indium Tin Oxide (ITO)/PEDOT:PSS/poly(2-ethylhexyl)surfanyl-5-methoxy phenylene vinylene (MEH-S-PPV)/M with M = Al and M = Ca/Al were investigated by measurements of current-voltage-luminance characteristics. From analysis of these characteristics, evidence of charge trapping in devices was demonstrated. The trap parameters were then determined from Q-DLTS measurements, which were carried out on the samples as a function of the charging time, the applied voltage and the temperature. Five trap levels of activation energy in the range [0.3-0.6 eV] and of density of order of 1017 cm,3 were identified in diodes with Ca/Al cathode. Electron (one level) and hole (four levels) traps were then clearly distinguished by performing measurements in hole-only devices. Trapping processes are discussed and tentatively proposed to performance of the light emitting diodes studied. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Performance of thin-film transistors fabricated by sequential lateral solidification crystallization techniquesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2008M. A. Exarchos Abstract The performance of Excimer Laser Annealed (ELA) Thin-Film Transistors (TFTs), in terms of drain current behaviour in unstressed as well as in DC stressed devices, is presented. The transistors studied were fabricated under different irradiation schemes of a novel Sequential Lateral Solidification (SLS) process. As far as unstressed transistors concerned, drain current transients relaxed through stretched exponential law. Fitting results disclosed that both gate dielectric polarization and carrier recombination mechanisms occurred through transient relaxation. Deep Level Transient Spectroscopy (DLTS) technique was called forth in order to investi- gate the origin of carrier recombination mechanisms. DC hot carrier stress measurements, under "worst ageing condition" regime, were conducted in order to probe degradation mechanisms and device reliability standards. Crystal domain size significantly affects threshold voltage degradation. The latter increases with decreasing crystal domain size, due to increased concentration of protrusions in the polysilicon film. Transconductance degradation also depends on crystal domain size, attributed mainly to bulk polysilicon trap generation. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Deep electron states in indium-doped Cd0.93Mn0.07Te DLTS studyPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 4 2006A. Hajdusianek Abstract Electron traps in indium doped Cd0.93Mn0.07Te were studied with Deep Level Transient Spectroscopy. Five electron traps were found (labeled as E1 - E5). Energy levels ET of related defects are equal to ET 1 = 0.09 eV, ET 2 = 0.12 eV, ET 3 = 0.18 eV, ET 4 = 0.56 eV and ET 5 = 0.65 eV. Three of them (E1, E2, E3 ) are related to the defects with thermally activated capture cross section. Electric field enhanced electron emission from the trap E4 was observed and described in the terms of the Poole-Frenkel - mechanism. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Short term instabilities of InGaN GaN light emitting diodes by capacitance,voltage characteristics and junction spectroscopyPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005A. Castaldini Abstract We present a combined capacitance-voltage, Deep Level Transient Spectroscopy (DLTS) and electroluminescence (EL) study of short-term instabilities of InGaN/GaN LEDs submitted to forward current aging tests at room temperature. In the early stages of the aging tests at low forward current levels (15 and 20 mA), LEDs present a decrease in optical emission, which stabilizes within the first 50 hours and never exceeds 20% (measured at an output current of 1 mA after stressing the LEDs for 50 hours with 15 mA stress). The spectral distribution of the EL intensity does not change with stress, while C-V profiles detect changes consisting in apparent doping and/or charge concentration increase within quantum wells. This increase is correlated with the decrease in optical power. DLTS has been carried out to clarify the DC aging induced generation/modification of the energy levels present in the devices. Remarkable changes occur after the stress, which can be related to the doping/charge variation and thus to the efficiency loss. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth techniquePHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 4 2007M. Kaniewska Abstract In order to find the origin of crystalline defects occurring in the preparation of InAs/GaAs quantum dots (QDs), their appearance was tracked through three different sample types designed as Schottky diodes. Specimens with a GaAs cap layer on a GaAs buffer layer as well as with an InAs wetting layer without QDs were grown by molecular beam epitaxy (MBE) using the interrupted growth technique. Deep level transient spectroscopy (DLTS) was used for comparison with structures containing InAs QDs. It was found that two main levels with thermal activation energies of 0.14,0.16 eV and 0.46,0.52 eV from the conduction band edge, respectively, are grown-in defects, which are characteristic of the growth interrupted interface occuring under an excess of As. Both these levels together with an additional level at 0.10,0.12 eV found in the InAs wetting layer structures were also present in those with QDs, probably resulting from strain or In penetration. All three defects were agglomerated close to the interface created by the interrupted growth. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaNPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005A. Colder Abstract Deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) are used to study europium implanted gallium nitride layers. The implantation was realised at room temperature in the random and channeled geometries. From DLTS, we determine intrinsic defects with associated levels located in the band gap (below the conduction band). Besides, we point out a new electron trap named Eu2. Its associated level is located at about Ec ,0.36 eV and the defect is probably related to the europium rare-earth ion. TEM investigation shows a difference in structure caused by changing the geometry of implantation. The random implanted sample contains numerous planar defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High resolution Laplace deep level transient spectroscopy of p-type polycrystalline diamondPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 9 2008N. Mitromara Abstract High resolution Laplace deep level transient spectroscopy (LDLTS) has been used to characterise deep electronic states in the band gap of polycrystalline p-type diamond. The thin diamond films were grown by the hot-filament chemical vapour deposition (HFCVD) technique on p-type and n-type Si for the formation of the Schottky and p,n diodes respectively. The B concentration in the diamond films ranged from 7 × 1018 cm,3 to 7 × 1021 cm,3. Conventional capacitance DLTS showed a fairly narrow peak at about 180 K from the diamond grown on p-type Si, but further analysis with LDLTS shows that this peak originates from a complex defect with up to three hole emission rates. In the case of the Schottky diode, these emission rates do not vary much with temperature which indicates that they may be due to the presence of an extended defect, where the valence band itself is changing its profile as the traps capture more carriers. LDLTS of a similar trap in the diamond grown on n-type Si also shows three emission rates, which do not vary as expected with temperature. The results are discussed in terms of defects existing in the strain fields of grain boundaries, and exhibiting non point-defect like properties. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Charge deep level transient spectroscopy of electron traps in MOVPE grown n-GaN on sapphirePHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 11 2008Zahid Hasan Mahmood Abstract We report investigation of electron traps in n-GaN, grown on sapphire by metal organic vapour phase epitaxy, by using charge deep level transient spectroscopy (Q -DLTS). Measurements have been made isothermally by rate window scanning over the temperature range 300,370 K and for rate windows in the range 105 s,1 to 1 s,1. Two traps are observed in this range with (i) activation energies ,0.58 eV and ,0.45 eV and (ii) capture cross sections ,2 × 10,15 cm2 and ,3 × 10,19 cm2 respectively. The first of these defects has been observed in all of the DLTS investigations reported in the literature. However, the second trap has not been seen in majority of the earlier reports. Possible reasons for this difference are discussed. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Electrical study of InAs/GaAs quantum dots with two different environmentsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008M. Kaniewska Abstract Unusually complex spectra have been obtained for InAs/GaAs quantum dot (QD) structures when studied as a function of applied bias by deep level transient spectroscopy (DLTS). In spite of their complexity, basic processes for electron escape from the QDs have been recognized. We show that due to the variety of transitions involving direct tunneling and more complex thermal transitions, due to QD size fluctuations, and environmental dependent QD carrier population, measurement conditions have to be carefully suited for characterizing transport properties of the QDs. Additionally, on the basis of results of a comparative study under chosen measurement conditions, we conclude that the states of the InAs QDs shift towards the middle of the energy gap if the QDs are capped with a Ga-rich InGaAs insertion. It explains a red-shift of the emission wavelength that was found by photoluminescence measurements (PL). (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Trap states in n-GaN grown on AlN/sapphire template by MOVPEPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008T. Ito Abstract Using epitaxial AlN/sapphire templates, high crystalline quality GaN films are grown on them by metal organic chemical vapour deposition. The electron traps behaviour of these GaN films were observed by deep level transient spectroscopy (DLTS). Four distinct trap levels were ob-served in both n-GaN grown on AlN/sapphire template and on conventional low temperature buffer layer (LT-BL)/sapphire. The magnitude the of the DLTS signal E1 and E2 were almost same. It suggests that E1 is not only associate with dislocation density but also other defect. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN filmsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008A. R. Arehart Abstract The use of rf-plasma and ammonia nitrogen sources for growth of GaN films by molecular beam epitaxy (MBE) are compared in terms of defect incorporation using deep level optical spectroscopy (DLOS) and deep level transient spectroscopy (DLTS). To better improve the understanding of ammonia-based MBE growth of GaN and potential defect sources as opposed to the more studied plasma source-based MBE-grown material several V/III ratios were also investigated, which were generated via systematic adjustment of the ammonia flow rates during growth. The DLOS spectra, comparing deep traps within the n-GaN grown using N-plasma and ammonia sources, reveal the presence of the same deep levels due to background carbon and gallium vacancies, with energy levels at EC -3.28, EC -2.62, and EC -1.28. The DLTS results of the N-plasma and ammonia-based MBE samples show two similarly dominant electron traps at EC -0.60, and EC -0.24 in each sample. Measurements made as a function of V/III flux ratio for ammonia-based MBE growth indicate a large dependence of the EC -0.24 eV trap concentration on growth flux ratio, which is significant for guiding continued optimization of this promising MBE growth method for GaN devices. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Radiation-induced defects and their transformations in oxygen-rich germanium crystalsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2003V. P. Markevich Abstract Defects induced by irradiation with fast electrons and 60Co gamma-rays in oxygen-rich Ge crystals have been studied by means of infrared absorption, deep level transient spectroscopy (DLTS) and Hall effect measurements. It is found that the vacancy,oxygen (V,O) complex in Ge has three charge states (doubly negative, singly negative and neutral ones) and two corresponding energy levels in the gap at about Ec,,,0.21 eV and Ev + 0.27 eV. Three absorption bands at 621.4, 669.1 and 716.2 cm,1 are identified as oxygen-related asymmetrical stretching vibrations for the neutral, singly negatively charged and doubly negatively charged states of the V,O complex, respectively. [source] Reactive ion etching of dielectrics and silicon for photovoltaic applicationsPROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 7 2006Prakash N. K. Deenapanray Abstract This paper investigates the reactive ion etching of SiO2, Si3N4, and Si using CHF3/O2 plasma. In particular, we have characterized the time and rf power dependence of the carrier lifetimes in n- and p-type FZ Si. The time dependence of reactive ion etching (RIE) at different rf powers provide insight into the two competing processes of damage accumulation and damage removal in the near-surface region of the Si during plasma etching. The carrier lifetime, measured using the quasi-steady-state photoconductance (QSSPC) technique, has a quadratic dependence on the rf power, which can be related to changes in the dc self-bias generated by the plasma at different rf powers. The change in carrier lifetime is similar in both n- and p-type Si of the same doping concentration. Using this fact, together with the electronic properties of defects obtained by deep level transient spectroscopy (DLTS), we have modeled the injection-dependence of the measured carrier lifetimes using the Shockley,Read,Hall model. The isochronal annealing behavior of plasma etched Si has also been studied. Copyright © 2006 John Wiley & Sons, Ltd. [source] Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cellsPROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 1 2006I. L. Repins Abstract We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process methods in multiple laboratories. This collection of samples exhibits a wide variation of morphologies, compositions, and solar power conversion efficiencies. An extensive characterization of transport properties is reported here,including those derived from capacitance,voltage, admittance spectroscopy, deep level transient spectroscopy, time-resolved photoluminescence, Auger emission profiling, Hall effect, and drive level capacitance profiling. Data from each technique were examined for correlation with device performance, and those providing indicators of related properties were compared to determine which techniques and interpretations provide credible values for transport properties. Although these transport properties are not sufficient to predict all aspects of current-voltage characteristics, we have identified specific physical and transport characterization methods that can be combined using a model-based analysis algorithm to provide a quantitative prediction of voltage loss within the absorber. The approach has potential as a tool to optimize and understand device performance irrespective of the specific process used to fabricate the CIGSS absorber layer. Copyright © 2005 John Wiley & Sons, Ltd. [source] | ||||||||||