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Dc Characteristics (dc + characteristic)
Selected AbstractsAlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applicationsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2010Shiping Guo Abstract In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10,nm AlInN barrier were grown with very low Ga background level (<1%). The low Rsh of 215,,/sq was obtained with an excellent standard deviation of 1.1% across 3, wafers. Lehighton RT contactless Hall tests show a high mobility of 1617,cm2/V,s and sheet charge density of 1.76,×,1013/cm2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1,µm and 25,nm Al2O3 passivation show maximum drain current (IDS,max) of 2.36,A/mm at VGS,=,2,V. Gate recessed devices with 0.15,µm gate length and 25,nm Al2O3 passivation resulted in maximum transconductance (gm) of 675,mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum fT is 86,GHz and fmax is 91.7,GHz. [source] DC characteristics and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistorPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009Jeng-Wei Yu Abstract We report selected site lateral growth of crystalline [110] GaN nanowire (NW) with high channel mobility of 1050 cm2/V-s on SiO2/p-Si. This scheme enables photolithographic fabrication of top-gated GaN NW-MOSFET of 60 nm dia. and 2 ,m gate length. Device parameters with gm of 25 ,S, saturation current of 90 ,A, and cut-off frequency fT at 14 GHz have been extracted. In an active load configuration of GaN NW-MOSFET inverter we reported voltage gain of 2 and a high current on/off ratio of 104. These observations suggest promising functional diversification of the GaN NW-MOSFET on the Si-based CMOS platform for the sub-50 nm technology nodes. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into accountINTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Issue 6 2009Janusz Zar Abstract This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self-heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors,BD285 and 2N3055,were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed. Copyright © 2009 John Wiley & Sons, Ltd. [source] Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxyPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2006Seung Jae Hong Abstract For the first time, selective-area growth (SAG) technique has been developed using plasma-assisted molecular beam epitaxy (PAMBE), enabling fabrication of a recessed-gate structure for the metal-semiconductor field-effect transistor (MESFET) without etching. On patterned SiO2 samples, polycrystalline GaN and single crystal n+ -GaN were observed to grow in the masked and unmasked regions, respectively. The regrown layers were analyzed using AFM. Ohmic contact formed on the n+ -GaN exhibited a vastly improved contact resistivity of 1.8 × 10,8 , cm2, giving rise to excellent device characteristics including a peak drain current of 360 mA/mm and a maximum transconductance of 46 mS/mm. The advantages of SAG were further investigated by comparing the dc characteristics of recessed-gate and unrecessed MESFET. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High and low energy proton irradiation effects on AlGaN/GaN HFETsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2006G. Sonia Abstract AlGaN/GaN heterojunction field effect transistors (HFETs) have been irradiated with protons at 68 MeV and 2 MeV with fluences up to 1013 cm,2 in order to simulate operation in space. Hall effect measurements, dc characteristics and RF load pull measurements at 2 GHz do not reveal significant changes indicating the suitability of the transistors for reliable operation in space. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Investigation of AlGaN/GaN HEMTs on Si Substrate Using BackgatingPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2003M. Marso Abstract The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN HEMT on silicon (111) substrate is investigated. This effect, known as backgating, is used to study traps that are located between substrate and 2DEG channel. The transient of the drain current after applying a negative substrate voltage is evaluated for measurements with and without illumination. Several trap contributions are resolved by measurements at different photon energies. A photocurrent is observed up to 600 nm wavelength. Up to this wavelength the backgating effect can be compensated and the drain current restored by a short light pulse. The experiments are performed on completed HEMTs, allowing investigation of the influence of device fabrication technology. [source] | ||||||||||