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Cross Junction (cross + junction)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

Local Hall effect in a hybrid InSb cross junction

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2004
W. Y. Kim
Abstract We present the local Hall effect in a hybrid Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single microstructured ferromagnetic element. A clear hysteresis loop was found to appear in the output signal for the cross junction with a ferromagnetic element due to the strong perpen- dicular component of the magnetic fringe field emanating from the edge of the ferromagnet. We demon- strate that the local fringe field from the ferromagnetic element inducing a Hall voltage improves the Hall sensitivity (4.5 ,/Oe). (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Electrical transport properties of a single wall carbon nanotube network

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 4 2009
J. S. Hwang
Abstract A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)-SWCNT (semiconducting), SWCNT (semiconducting)-SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]