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Conducting Oxide (conducting + oxide)

Distribution by Scientific Domains
Polymers and Materials Science37%

Kinds of Conducting Oxide

  • transparent conducting oxide
    		•

    Selected Abstracts

    ChemInform Abstract: Preparation of La2-xSrxNiO4 (x = 0,1.3) Conducting Oxides via a Citrate Route.

    CHEMINFORM, Issue 18 2001
    S. P. Tolochko
    Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source]

    Subsolidus Phase Relationships in the ZnO,In2O3,SnO2 System

    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 11 2008
    Steven P. Harvey
    The subsolidus phase relationships in the ZnO,InO1.5,SnO2 system were investigated at 1275°C using X-ray diffraction. Each of the end members of the ternary diagram is a transparent conducting oxide. There are two substantial solid solutions in the ternary phase space, the bixbyite solid solution In2,2xZnxSnxO3 (x=0,0.40), and the indium substituted zinc stannate spinel, Zn(2,x)Sn(1,x)In2xO4 (x=0,0.45). The bixbyite solid solution is an outstanding TCO, whereas the spinel is only moderately conducting. Along the ZnO,InO1.5 binary, there is a series of transparent conducting homologous compounds (ZnO)k·In2O3 (where k=3, 4, 5, 6, 7, 9, 11). Within ternary phase space, these homologous compounds were found to exhibit negligible Sn solubility, and were always found to be compatible with the spinel. Equilibrium was difficult to achieve in the phase space between the homologous series compounds and the spinel, owing to sluggish kinetics. A procedure involving mixtures of prereacted spinel and the Zn11In2O14 (k=11) compound was developed, which allowed for more rapid approach to thermodynamic equilibrium, thereby allowing for the establishment of phase relationships near the ZnO corner of the phase diagram. [source]

    Fabrication of a n -type ZnO/p -type Cu,Al,O heterojunction diode by sputtering deposition methods

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009
    Satoru Takahata
    Abstract CuAlO2 polycrystalline films were deposited by the helicon-wave-excited plasma sputtering (HWPS) method at 700 °C. The best full-width at half-maximum value of the (006) CuAlO2 X-ray diffraction peak was 0.19 degrees, which was similar to those reported previously using other deposition methods. While, noncrystalline Cu,Al,O films were deposited by a conventional RF sputtering method. Using this p -type transparent conducting oxide (TCO) film and an n -type ZnO film deposited by HWPS, a n -type ZnO/p -type Cu,Al,O heterojunction diode was fabricated. Optical transmittance of the device was approximately 80% in the near infrared region. The rectifying current,voltage characteristics with a threshold forward voltage approximately 1.4 V were obtained. These results are the first step toward realizing an electrical/optical device using p -type CuAlO2 or Cu-Al-O films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Deposition of nano-crystalline lead chalcogenide thin films using a simple electrochemical technique

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2008
    Nillohit Mukherjee
    Abstract Nanocrystalline thin films of lead chalcogenides (PbS, PbSe and PbTe) were deposited on transparent conducting oxide (TCO) coated glass substrates at room temperature using a simple electrochemical (galvanic) technique, from suitable electrolytic solutions and without the application of any external bias. X-ray characterization revealed that PbS, PbSe and PbTe thin films were all of cubic phase. The formation of nanocrystallites with dense and compact surface morphology was detected from FESEM and AFM measurements. The nanocrystalline films showed ,blue shifted' IR absorption. Hall measurements showed the materials to be p-type in nature with carrier concentration in the range 1019 , 1020/cm3. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Development of thin-film Cu(In,Ga)Se2 and CdTe solar cells

    PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 2-3 2004
    A. Romeo
    Abstract Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p -type absorber layers of optimum optoelectronic properties and n -type wide-bandgap partner layers to form the p,n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd. [source]

    CdTe solar cell in a novel configuration

    PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 1 2004
    A. N. Tiwari
    Abstract Polycrystalline thin-film CdTe/CdS solar cells have been developed in a configuration in which a transparent conducting layer of indium tin oxide (ITO) has been used for the first time as a back electrical contact on p-CdTe. Solar cells of 7·9% efficiency were developed on SnOx:F-coated glass substrates with a low-temperature (<450°C) high-vacuum evaporation method. After the CdCl2 annealing treatment of the CdTe/CdS stack, a bromine methanol solution was used for etching the CdTe surface prior to the ITO deposition. The unique features of this solar cell with both front and back contacts being transparent and conducting are that the cell can be illuminated from either or both sides simultaneously like a ,bi-facial' cell, and it can be used in tandem solar cells. The solar cells with transparent conducting oxide back contact show long-term stable performance under accelerated test conditions. Copyright © 2004 John Wiley & Sons, Ltd. [source]

    Nanotube Arrays: Template-Directed Liquid ALD Growth of TiO2 Nanotube Arrays: Properties and Potential in Photovoltaic Devices (Adv. Funct.

    ADVANCED FUNCTIONAL MATERIALS, Issue 9 2010
    Mater.
    X. Hu, A. Sellinger, et al. present on page 1390 an array of TiO2 nanotubes prepared via a new liquid atomic layer deposition process in porous anodic alumina templates. The ability to reproduce the arrays on various types of substrates including Si and transparent conducting oxides opens opportunities in many exciting opto-electronic applications. The potential of such arrays in ordered bulk-heterojunction solar cells is explored. [source]

    The Remarkable Thermal Stability of Amorphous In-Zn-O Transparent Conductors,

    ADVANCED FUNCTIONAL MATERIALS, Issue 20 2008
    Matthew P. Taylor
    Abstract Transparent conducting oxides (TCOs) are increasingly critical components in photovoltaic cells, low-e windows, flat panel displays, electrochromic devices, and flexible electronics. The conventional TCOs, such as Sn-doped In2O3, are crystalline single phase materials. Here, we report on In-Zn-O (IZO), a compositionally tunable amorphous TCO with some significantly improved properties. Compositionally graded thin film samples were deposited by co-sputtering from separate In2O3 and ZnO targets onto glass substrates at 100,°C. For the metals composition range of 55,84 cation% indium, the as-deposited IZO thin films are amorphous, smooth (RRMS,<,0.4,nm), conductive (,,,,3000,,,1,·,cm,1), and transparent in the visible (TVis,>,90%). Furthermore, the amorphous IZO thin films demonstrate remarkable functional and structural stability with respect to heating up to 600,°C in either air or argon. Hence, though not completely understood at present, these amorphous materials constitute a new class of fundamentally interesting and technologically important high performance transparent conductors. [source]