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Compound Semiconductors (compound + semiconductor)
Selected AbstractsA novel growth method for ZnAl2O4 single crystalsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 3 2006K. Kumar Abstract ZnAl2O4 is a well-known wide band gap compound semiconductor (Eg=3.8eV), ceramic, opto-mechanical, anti-thermal coating in aero-space vehicles and UV optoelectronic devices. A novel method for the growth of single crystals of a ternary oxide material was developed as a fruit of a long term work. Material to be grown as metal incorporated single crystal was taken as precursor and put into a bath containing acid as reaction speed up reagent (catalyst) as well as solvent with a metal foil as cation scavenger. Using this method, ZnAl2O4 crystals having hexagonal facets are prepared from a single optimized bath. Structural and compositional properties of crystals were studied using Philips, Xpert - MPD: X-ray diffractometer and Philips, ESEM-TMP + EDAX. Thus technique was found to be a new low cost and advantageous method for growth of single crystals of ternary oxide a material. We hope that these data be helpful either as a scientific or technical basis in material processing. Dedicated to Prof. P. Ramasamy © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim [source] Surface plasmon enhanced light emission from semiconductor materialsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008Koichi Okamoto Abstract Surface plasmon (SP) coupling technique was used to enhance light emissions from semiconductor nanocrystals with evaporated metal layers. We found that the SP coupling can increase the internal quantum efficiencies (IQE) of emission from CdSe-based nanocrystals regardless of the initial efficiencies. This suggests that this technique should be much effective for various materials that suffer from low quantum efficiencies. We also obtained 70-fold enhancement of emission from silicon nanocrystals in silicon dioxide. Obtained IQE value is 38%, which is as large as that of a compound semiconductor with direct transition. The SP coupling technique would bring a great improvement to silicon photonics. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] New Developments in Vertical Gradient Freeze Growth,ADVANCED ENGINEERING MATERIALS, Issue 7 2004O. Pätzold The Vertical Gradient Freeze (VGF) technique is an important method for growing high quality compound semiconductors such as GaAs. Results obtained with a novel VGF set-up developed for the growth under influence of a rotating magnetic field (RMF) and under vapour pressure control are presented in this paper. The RMF is shown to be a powerful tool to affect the heat and mass transport within the melt in a definite way. In GaAs:Si growth, RMF induced flow results in a decreased curvature of a nominally concave-shaped interface, i.e., it contributes to an axial heat transfer at the solid-liquid interface. The axial dopant segregation of Ga in Ge is found to be improved under continuous RMF action due to better mixing of the melt. The set-up also allowed to determine the influence of carbon and the arsenic vapour pressure on the dopant incorporation and crystal quality. [source] Cover Picture: Photolithographic Route to the Fabrication of Micro/Nanowires of III,V Semiconductors (Adv. Funct.ADVANCED FUNCTIONAL MATERIALS, Issue 1 2005Mater. Abstract The cover shows a patterned assembly of GaAs nanowires with their ends tethered to a bulk single-crystal wafer as described on p.,30 by Rogers and co-workers. These wires, which have triangular cross-sections, were fabricated via a top,down process that combines photolithography and anisotropic chemical etching. Nano/microwires of semiconducting materials (e.g., GaAs and InP) with triangular cross-sections can be fabricated by "top,down" approaches that combine lithography of high-quality bulk wafers (using either traditional photolithography or phase-shift optical lithography) with anisotropic chemical etching. This method gives good control over the lateral dimensions, lengths, and morphologies of free-standing wires. The behaviors of many different resist layers and etching chemistries are presented. It is shown how wire arrays with highly ordered alignments can be transfer printed onto plastic substrates. This "top,down" approach provides a simple, effective, and versatile way of generating high-quality single-crystalline wires of various compound semiconductors. The resultant wires and wire arrays have potential applications in electronics, optics, optoelectronics, and sensing. [source] Projective techniques for the growth of compound semiconductor nanostructuresPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003T. Schallenberg Abstract We investigate the geometric deposition of compound semiconductors through shallow shadow masks as a means to obtain 3D nanostructures in situ. A high spatial resolution in the order of 10 nm and good material quality are achieved by epitaxy with directed molecular beams through stationary masks. Based on our study of growth dynamics new processes were tailored for the deposition of compound semiconductors. These expand the degrees of freedom of directional shadow growth. We would like to give an overview of this alternative technology, and present late results from experiments with an optimised molecular beam epitaxy (MBE) set-up. Projective techniques are demonstrated with sample structures. We discuss their respective potential and limitations. An outlook shows the perspective of further increase of the complexity of feasible structures by increasing the complexity of the masks (3D nanostructured). [source] Nanoindentation response of compound semiconductorsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2007E. Le Bourhis Abstract The paper reviews the nanoindentation behaviour of III-V semiconductors under concentrated load and its implication for optoelectronic-device design. We consider first, fundamental aspects involved into the mechanical resistance to contact loading of semiconductor single crystals (elastic-plastic transition, indentation strain, hardness-yield relationship). The paper then describes recent applicative studies aimed at improving the heterostructure quality used in optoelectronic applications and emphasizes the so-called mechanical design (alloying and compliant substructure). (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] III-V concentrator solar cell reliability prediction based on quantitative LED reliability data,PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 6 2007Manuel Vázquez Abstract III-V Multi Junction (MJ) solar cells based on Light Emitting Diode (LED) technology have been proposed and developed in recent years as a way of producing cost-competitive photovoltaic electricity. As LEDs are similar to solar cells in terms of material, size and power, it is possible to take advantage of the huge technological experience accumulated in the former and apply it to the latter. This paper analyses the most important parameters that affect the operational lifetime of the device (crystalline quality, temperature, current density, humidity and photodegradation), taking into account experience on the reliability of LEDs. Most of these parameters are less stressed for a III-V MJ solar cell working at 1000 suns than for a high-power LED. From this analysis, some recommendations are extracted for improving the long-term reliability of the solar cells. Compared to high-power LEDs based on compound semiconductors, it is possible to achieve operational lifetimes higher than 105,hours (34 years of real-time operation) for III-V high-concentration solar cells. Copyright © 2007 John Wiley & Sons, Ltd. [source] Structural investigation of GeSb6Te10 and GeBi6Te10 intermetallic compounds in the chalcogenide homologous seriesACTA CRYSTALLOGRAPHICA SECTION B, Issue 4 2010Toshiyuki Matsunaga The crystal structures of GeSb6Te10 and GeBi6Te10 were scrutinized using an X-ray powder diffraction method, which revealed that these compounds crystallize in trigonally distorted cubic close-packed structures with a 51-layer period (). Each layer consists of a triangular atomic net; Te atoms occupy their own specific layers, whereas Ge, Sb and Bi atoms are located in the other layers. In these pseudobinary compounds, random atomic occupations of Ge and Sb/Bi are observed and the layers form two kinds of elemental structural blocks by their successive stacking along the c axis. These compounds can be presumed to be isostructural. It is known that the chemical formula of the chalcogenide compounds with the homologous structures found in these pseudobinary systems can be written as (GeTe)n(Sb2Te3)m or (GeTe)n(Bi2Te3)m (n, m: integer); the GeSb6Te10 and GeBi6Te10 investigated in this study, which correspond to the case in which n = 1 and m = 3, naturally have 3,×,l = 51-layer structures according to a formation rule l = 2n + 5m commonly found in the compounds of these chalcogenide systems (l represents the number of layers in the basic structural unit). Calculations based on the density functional theory revealed that these materials are compound semiconductors with very narrow band gaps. [source] | |||||||||||||