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Compositional Properties (compositional + property)

Distribution by Scientific Domains
Physics and Astronomy100%

Selected Abstracts

A novel growth method for ZnAl2O4 single crystals

CRYSTAL RESEARCH AND TECHNOLOGY, Issue 3 2006
K. Kumar
Abstract ZnAl2O4 is a well-known wide band gap compound semiconductor (Eg=3.8eV), ceramic, opto-mechanical, anti-thermal coating in aero-space vehicles and UV optoelectronic devices. A novel method for the growth of single crystals of a ternary oxide material was developed as a fruit of a long term work. Material to be grown as metal incorporated single crystal was taken as precursor and put into a bath containing acid as reaction speed up reagent (catalyst) as well as solvent with a metal foil as cation scavenger. Using this method, ZnAl2O4 crystals having hexagonal facets are prepared from a single optimized bath. Structural and compositional properties of crystals were studied using Philips, Xpert - MPD: X-ray diffractometer and Philips, ESEM-TMP + EDAX. Thus technique was found to be a new low cost and advantageous method for growth of single crystals of ternary oxide a material. We hope that these data be helpful either as a scientific or technical basis in material processing. Dedicated to Prof. P. Ramasamy © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim [source]

Characterizations of nanostructured silicon-carbon films deposited on p-layer by PECVD

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3-4 2010
U. Coscia
Abstract Nanostructured silicon carbon films composed of silicon nanocrystallites embedded in the amorphous silicon carbon matrix are prepared by a rf-PECVD system at 250 °C from silane and methane gas mixture highly diluted in hydrogen onto 7059 Corning glass and p-layer deposited on tin oxide substrates by varying rf power from 25 to 65 W. The structural and compositional properties of the films have been investigated. The study demonstrates that rf power controls the crystalline fraction as well as the silicon crystallite size and that p-layer/tin oxide structure enhances the nucleation of silicon grains as compared to Corning glass (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

IR-VIS-UV ellipsometry, XRD and AES investigation of In/Cu and In/Pd thin films

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2008
A. A. Wronkowska
Abstract Optical and compositional properties of In, In/Pd and Pd/In/Pd thin films evaporated on Cu and SiO2 substrates in vacuum were investigated by means of X-ray diffractometry, Auger electron spectroscopy and spectroscopic ellipsometry methods. Auger depth profile studies were performed in order to determine the composition of InCu and InPd structures. In both systems interdiffusion of metals was detected at room temperature. The XRD patterns indicated formation of CuIn2 and PdIn3 phases in the samples. Optical properties of the composite layers containing intermetallic phases were derived from ellipsometric quantities , and , measured in the photon energy range 0.1-6.0 eV at different angles of incidence using suitable multilayer models for the examined samples. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Ellipsometric studies of diamond like carbon films prepared by PECVD using pulsed DC power supply

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2008
D. K. Rai
Abstract Diamonds like carbon (DLC) films were deposited by DC and pulsed DC glow discharge plasma enhanced chemical vapor deposition technique (PECVD). High deposition rates and uniform thin film were obtained using pulsed DC PECVD glow discharge deposition technique. The optical and surface properties of these films were investigated using transmission spectroscopy, spectroscopic Ellipsometry and atomic force microscopy. Fourier transform infrared spectroscopy was employed to examine the compositional properties and sp3/sp2 ratio in our films. Phase modulated Spectroscopic Ellipsometry (SE) in wide range of 300-1650 nm was used to determine the complex refractive index (ñ (,) = n (,) +ik (,)) using Forouhi-Bloomer amorphous model in the analyses of SE data. The extracted parameters are reported. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]