Czochralski Silicon (czochralski + silicon)

Distribution by Scientific Domains
Physics and Astronomy66%

Selected Abstracts

Synchrotron X-ray topography of electronic materials

JOURNAL OF SYNCHROTRON RADIATION, Issue 3 2002
T. Tuomi
Large-area transmission, transmission section, large-area back-reflection, back-reflection section and grazing-incidence topography are the geometries used when recording high-resolution X-ray diffraction images with synchrotron radiation from a bending magnet, a wiggler or an undulator of an electron or a positron storage ring. Defect contrast can be kinematical, dynamical or orientational even in the topographs recorded on the same film at the same time. In this review article limited to static topography experiments, examples of defect studies on electronic materials cover the range from voids and precipitates in almost perfect float-zone and Czochralski silicon, dislocations in gallium arsenide grown by the liquid-encapsulated Czochralski technique, the vapour-pressure controlled Czochralski technique and the vertical-gradient freeze technique, stacking faults and micropipes in silicon carbide to misfit dislocations in epitaxic heterostructures. It is shown how synchrotron X-ray topographs of epitaxic laterally overgrown gallium arsenide layer structures are successfully explained by orientational contrast. [source]

Enhanced oxygen diffusion in Czochralski silicon at 450,650 °C

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2008
Can Cui
Abstract New evidence for the enhanced oxygen diffusion in Czochralski silicon at temperatures ranging from 450 °C to 650 °C has been obtained from oxygen precipitation in prolonged annealing of 750 °C following a variety of pre-treatments involving slow ramping anneal or single-step anneal. The two previously proposed fast-diffusing species of oxygen,vacancy and oxygen,silicon-interstitial to understand the enhanced oxygen diffusion at low temperatures are questioned. Moreover, the reason as why significant oxygen precipitation can occur at such a low temperature of 750 °C has been elucidated based on the enhanced oxygen diffusion at low temperatures. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 9 2006
Jerzy Ciosek
Abstract Oxygen-related defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to one or 4-steps pre-annealing at 720,1000 K under 105 Pa and next treated at 1170,1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence (PL) and microhardness measurements as well as by spectroscopic reflectrometry. Microstructure of HT-HP treated Cz-Si is dependent on nucleation centres for oxygen precipitation created by pre-annealing and on applied pressure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Depth profile of thermal donors in NTDCZSi

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2003
Y. X. Li
Abstract The depth profile of thermal donors (TDs) produced by annealing neutron transmutation-doped Czochralski silicon (NTDCZSi) at high temperatures above 1000 °C first and then at 450,°C has been studied by means of the thermal conversion spreading resistance (TCSR). The concentration of the TDs increases with the distance from the surface of the sample, and its depth profile can be described by the error function when the annealing temperature is low or the annealing time is short. A peak is formed in the depth profile under the annealing condition of 1100,°C for 4 h. Combining with an infrared absorption study, it is found that the curves of the diffusivity coincide with the loss of interstitial oxygen. These results indicate that the distribution of the TDs depends on both the out-diffusion and the precipitation of oxygen. Neutron irradiation accelerates the out-diffusion of the oxygen in the surface region of the silicon and the oxygen precipitation in the bulk. [source]

Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 6 2001
Ji Youn Lee
In p -type Czochralski-grown (Cz) silicon a light-induced degradation of the minority-carrier lifetime is well known in the literature. Reducing the extent of this degradation would significantly improve the stable effective lifetime and thus the related performance of solar cells. In this work, the reduction of the density of the metastable defect underlying the degradation is performed by rapid thermal annealing (RTA). For a proper analysis it is extremely important to avoid contamination by the RTA furnace. Both, SiNx and SiO2 were examined as a barrier layer. A 60 nm SiNx layer was proven to act as the most effective barrier layer, allowing maintenance of a very high lifetime of 700,,s on 1.25 ,,cm p -type FZ material. A design-of-experiments (DOE) study was used to analyze the effect of five process parameters on the stable effective lifetime. Especially, the plateau temperature shows a strong correlation with ,d, the stable effective lifetime after light-induced degradation. The effect of plateau temperature on ,d of Cz- and FZ-Si wafers is examined in the temperature range of 700,1050°C for plateau time 120 s. It was found that the stable effective lifetime of all RTA-treated Cz-wafers is increased compared with the initial stable effective lifetime before processing. The highest increase of stable effective lifetime (by a factor of around 2) is obtained at 900°C with a process time of 120 s. This increase in lifetime is reflected in a reduced concentration of the metastable defect. Copyright © 2001 John Wiley & Sons, Ltd. [source]