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BiFeO3 Films (bifeo3 + film)
Selected AbstractsLarge Piezoelectric Coefficient in Tb-Doped BiFeO3 FilmsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2010Xuemei Chen Polycrystalline BiFeO3 and Bi1,xTbxFeO3 (BTFO) (x=0.05,0.16) thin films were deposited on indium tin oxide/glass substrates via a metal organic deposition method. The influence of Tb doping content on the structure and multiferroic properties was investigated. X-ray diffraction results reveal that there may exist a structure transition around x=0.11 in the BTFO system. Well-saturated and rectangular P,E hysteresis loops can be observed in all BTFO films. The BTFOx=0.11 film exhibits the maximum values of the remanent out-of-plane piezoelectric coefficient (d33=140 pm/V) and saturated magnetization (Ms=22.2 emu/cm3). [source] Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin FilmsADVANCED MATERIALS, Issue 7 2009Ho Won Jang Two-variant stripe domains in BiFeO3 films on miscut (001) SrTiO3 substrates exhibit square-like, complete ferroelectric switching with low leakage current. Both the preferential distortion of BiFeO3 unit cells and the persistent step-flow growth induced by the substrate anisotropy are the origins of the formation of the two-variant stripe domains in (001) BiFeO3 films. [source] Large Electric Polarization and Exchange Bias in Multiferroic BiFeO3,ADVANCED MATERIALS, Issue 11 2006J. Dho Low-leakage BiFeO3 films have been grown with saturated ferroelectric hysteresis loops (see figure) and a very large remanent polarization. The antiferromagnetic nature of BiFeO3 films is confirmed by the appearance of an exchange bias in BiFeO3 -based spin-valve multilayers. The results imply that there is potential for room-temperature applications of BiFeO3 that combine ferroelectric and antiferromagnetic functionality. [source] MOCVD of BiFeO3 Thin Films on SrTiO3,CHEMICAL VAPOR DEPOSITION, Issue 5 2007J. Thery Abstract Bi-Fe-O thin films are grown by liquid-injection metal-organic (MO)CVD on (001) SrTiO3 substrates using two different bismuth precursors, Bi(tmhd)3 and Bi(mmp)3. The precursor Bi(mmp)3 is found to be more effective for Bi incorporation in the films. Epitaxial BiFeO3 films are obtained and no evidence for secondary phases such as Fe2O3 or Bi2O3 is found by X-ray diffraction (XRD) or transmission electron microscopy (TEM) studies. However, the presence of a multiple binding environment for Fe3+ is shown from the X-ray photoelectron spectroscopy (XPS) analyses. Moreover, XPS shows evidence of a Fe2+/Fe3+ valence mixed state. A saturation magnetization of 70 emu cm,3 is measured. This value is much higher than that reported for the bulk BiFeO3 material. Both the double valence for Fe ions and the enhanced magnetization may originate in the presence of non-fully-oxidized ,-Fe2O3. [source] |