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Bias Current (bias + current)
Selected AbstractsModelling and design considerations on CML gates under high-current effectsINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Issue 6 2005M. Alioto Abstract In this paper, the effect of the transit time degradation of bipolar transistors on the power-delay trade-off in CML gates and their design is dealt with. A delay model which accounts for the transit time increase due to the high bias current values used in high-speed applications is derived by generalizing an approach previously proposed by the same authors (IEEE Trans. CAD 1999; 18(9):1369,1375; Model and Design of Bipolar and MOS Current,Mode Logic (CML, ECL and SCL Digital Circuits), Kluwer Academic Publisher: Dordrecht, 2005). The resulting closed-form delay expression is achieved by properly simplifying the SPICE model, and has an explicit dependence on the bias current which determines the power consumption of CML gates. Accordingly, the delay model is used to gain insight into the power-delay trade-off by considering the effect of the transit time degradation in high-speed designs. In particular, the cases where such effects can be neglected are identified, to better understand how the transit time degradation affects the performance of CML gates for current bipolar technologies. The proposed model has a simple and compact expression, thus it turns out to be suitable for pencil-and-paper evaluations, as well as fast timing analysis. Simulations of CML circuits with a 20-GHz bipolar process show that the model has a very good accuracy in a wide range of current and loading conditions. Copyright © 2005 John Wiley & Sons, Ltd. [source] Power-delay optimization of D-latch/MUX source coupled logic gatesINTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Issue 1 2005M. Alioto In this paper a design strategy for MUX, XOR and D-latch source coupled logic (SCL) gates is proposed. To this end, an analytical model of the delay and the noise margin as a function of the transistors' aspect ratio and bias current is first introduced. Successively, analytical equations of the transistors' aspect ratio to meet a given noise margin specification are derived as a function of the bias current, and are then used along with the delay model to express the delay as an explicit function of the bias current and noise margin. The simplified delay expression explicitly relates speed performance to power dissipation and the noise margin, thereby providing the designer with the required understanding of the trade-offs involved in the design. Therefore, the criteria proposed allow the designer to consciously manage the power-delay trade-off. The delay dependence on the logic swing is also investigated with results showing that this delay is not necessarily reduced by reducing the logic swing, in contrast with the usual assumption. Since the results obtained are valid for all SCL gates and are independent of the CMOS process used, the guidelines provided afford a deeper understanding of SCL gates from a design point of view. Copyright © 2005 John Wiley & Sons, Ltd. [source] Electrical characteristics of Al/polyindole Schottky barrier diodes.JOURNAL OF APPLIED POLYMER SCIENCE, Issue 5 2009Abstract In this study, the forward and reverse bias current,voltage (I,V), capacitance,voltage (C,V), and conductance,voltage (G/,,V) characteristics of Al/polyindole (Al/PIN) Schottky barrier diodes (SBDs) were studied over a wide temperature range of 140,400 K. Zero-bias barrier height ,B0(I,V), ideality factor (n), ac electrical conductivity (,ac), and activation energy (Ea), determined by using thermionic emission (TE) theory, were shown fairly large temperature dispersion especially at lower temperatures due to surface states and series resistance of Al/PIN SBD. I,V characteristics of the Al/PIN SBDs showed an almost rectification behavior, but the reverse bias saturation current (I0) and n were observed to be high. This high value of n has been attributed to the particular distribution of barrier heights due to barrier height inhomogeneities and interface states that present at the Al/PIN interface. The conductivity data obtained from G/,V measurements over a wide temperature range were fitted to the Arrhenius and Mott equations and observed linear behaviors for ,ac vs. 1/T and ln ,ac vs. 1/T1/4 graphs, respectively. The Mott parameters of T0 and K0 values were determined from the slope and intercept of the straight line as 3.8 × 107 and 1.08 × 107 Scm,1K1/2, respectively. Assuming a value of 6 × 1012 s,1 for ,0, the decay length ,,1 and the density states at the Fermi energy level, N(EF) are estimated to be 8.74 Å and 1.27 × 1020 eV,1cm,3, respectively. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009 [source] Kinks and rotations in long Josephson junctionsMATHEMATICAL METHODS IN THE APPLIED SCIENCES, Issue 15 2001Wolfgang Hauck Abstract Kinks and rotations are studied in long Josephson junctions for small and large surface losses. Geometric singular perturbation theory is used to prove existence for small surface losses, while numerical continuation is necessary to handle large surface losses. A survey of the system behaviour in terms of dissipation parameters and bias current is given. Linear orbital stability for kinks is proved for small surface losses by calculating the spectrum of the linearized problem. The spectrum is split into essential spectrum and discrete spectrum. For the determination of the discrete spectrum, robustness of exponential dichotomies is used. Puiseux series together with perturbation theory for linear operators are an essential tool. In a final step, a smooth Evans function together with geometric singular perturbation theory is used to count eigenvalues. For kinks, non-linear orbital stability is shown. For this purpose, the asymptotic behaviour of a semigroup is given and the theory of centre and stable manifolds is applied. Copyright © 2001 John Wiley & Sons, Ltd. [source] Multiwavelength source based on SOA and EDFA in a ring-cavity resonatorMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 1 2009S. Shahi Abstract A multiwavelength source incorporating a semiconductor optical amplifier (SOA) and a erbium-doped fiber amplifier (EDFA) in a ring-cavity configuration was demonstrated. The multiwavelength source was able to generate more than 13 channels at ,27 dBm and above at a SOA bias current of 300 mA and 980-nm pump power of 92 mW. The number of wavelengths generated can be controlled by adjusting the birefringence of the ring cavity using the polarization controllers. The proposed laser has constant channel spacing of 0.8 nm, which is suitable for communication and sensing applications, and shows stable operation at room temperature. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 110,113, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23970 [source] Subtraction of scattering parameters for adiabatic intrinsic responses of semiconductor lasersMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 4 2008S. J. Zhang Abstract Thermal effects will make chip temperature change with bias current of semiconductor lasers, which results in inaccurate intrinsic response by the conventional subtraction method. In this article, an extended subtraction method of scattering parameters for characterizing adiabatic responses of laser diode is proposed. The pulsed injection operation is used to determine the chip temperature of packaged semiconductor laser, and an optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. In this case, the scattering parameters of laser diode are measured on adiabatic condition and the adiabatic intrinsic responses of packaged laser diode are first extracted. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis results indicate that inclusion of thermal effects is necessary to acquire accurate intrinsic responses of semiconductor lasers. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 992,995, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23278 [source] Long-term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing TestsQUALITY AND RELIABILITY ENGINEERING INTERNATIONAL, Issue 6 2005Y. Deshayes Abstract Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10,000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240). Copyright © 2005 John Wiley & Sons, Ltd. [source] Unusual current-voltage characteristics of single crystalline and bicrystalline La0.7Ca0.3MnO3 filmsANNALEN DER PHYSIK, Issue 10 2004A. Sawa Abstract The current-voltage characteristics of single crystalline and bicrystalline La0.7Ca0.3MnO3 films were measured and analyzed. Several epitaxial films, as well as 45° [001]-tilt grain boundaries, display current-voltage characteristics which are asymmetric with respect to polarity reversal of the bias current. One epitaxial film has a polarity dependent resistance of ,340k, and of ,670k, in forward and in reverse direction, respectively. [source] | ||||||||||