ZnO Epilayers (zno + epilayer)

Distribution by Scientific Domains


Selected Abstracts


Growth behavior and microstructure of ZnO epilayer on ,-LiAlO2(100) substrate by chemical vapor deposition

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2009
Liuwen Chang
Abstract Low lattice-mismatched ,-LiAlO2(100) substrates were employed to grow ZnO epitaxial films by chemical vapor deposition. The influence of growth temperature on growth behavior of ZnO was investigated. Results indicated that the low lattice-matched (100) crystallites nucleate on substrate at all growth temperatures employed. However, a second type of crystallites having an (0001) orientation can also nucleate on substrate at low growth temperature of 575 C and 640 C. The growth rate of the later crystallite is, however, higher than that of the (100) one and finally results in a single crystalline ZnO film having an [0001] azimuthal orientation. ( 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


High-energy vibrational modes in nitrogen-doped ZnO

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 3 2005
U. Haboeck
Abstract We present results of Raman-scattering experiments on a series of nitrogen-doped ZnO epilayers grown by chemical vapor deposition. Nitrogen, a potential acceptor in ZnO, was introduced by the thermal decomposition of ammonia (NH3). We found a structure consisting of at least four lines with frequencies of 2253, 2277, 2291, and 2304 cm,1. They increase in intensity simultaneously with additional modes in the energy range of the host phonons: both scale with the nitrogen concentration in the samples. The origin of the high-energy structure is tentatively assigned to vibrations of lattice-bound nitrogen or complexes, composed of the constituents of the dopant NH3. ( 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


High-quality ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 3 2004
Hiroyuki Kato
Abstract High-quality ZnO epilayers have been grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy. With increasing O/Zn flux ratio from the stoichiometric to the O-rich, the growth mode changed from three- to two-dimensional growth and the line widths of (0002) and (10,10) ,-rocking curves showed dramatic narrowing from 471 to 42 arsec and from 1635 to 46 arcsec, respectively. These values are narrower compared to those of ZnO on sapphire and also those of device-grade MOCVD-grown GaN. Moreover, A-, B-excitons (FEA, FEB), and the n = 2 state of FEA at 3.378, 3.393, and 3.424 eV, respectively, were clearly observed in the low-temperature (4.2 K) photoluminescence spectrum of ZnO grown under O-rich flux conditions. Our results show that growth under high O-rich flux conditions is required to produce high-quality Zn-polar ZnO films. ( 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Growth kinetics and properties of ZnO/ZnMgO hetero- structures grown by radical-source molecular beam epitaxy

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2007
S. V. Ivanov
Abstract A phenomenological approach to quantitative description of Zn(Mg)O growth by radical-source molecular beam epitaxy, based on the experimental studies of RHEED intensity oscillations, has been developed. It allows a precise control of growth rate, composition and stoichiometry at any growth temperature, Along with optimization of a growth initiation procedure on a c-sapphire, it is necessary condition for fabrication of high quality ZnO epilayers and ZnO/ZnMgO heterostructures in a wide Mg composition range. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]