X Alloys (x + alloy)

Distribution by Scientific Domains


Selected Abstracts


Local structure in (MnS)2x(CuInS2)1,x alloys

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006
A. Pietnoczka
Abstract Local structure around Mn atoms in (MnS)2x(CuInS2)1,x alloys for x , 0.09 has been determined using near-edge and extended X-ray absorption fine structure (XANES and EXAFS) measured at the Mn K-edge. We found that for the Mn concentration up to 9 at% Mn atoms substitute preferentially for indium in the chalcopyrite lattice. The Mn,S bond length is 2.43 0.015 , and is about 2% shorter than the In,S bond length. ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


A theoretical investigation of ZnOxS1,x alloy band structure

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2007
H. Rozale
Abstract We report the properties of ordered ZnOxS1,x alloys calculated in various structures (CuAu,I, Cu3Au, Luzonite and Famatinite) using a first-principles total-energy formalism based on the hybrid full-potential augmented plane-wave plus local orbitals (APW + lo) method, within the local-density approximation (LDA). The calculated band gaps of the alloys are direct and range from 0.49 for O-rich to 1.55 eV for S-rich ZnOxS1,x. The non linear variation of the band gap energy is related to the large electronegativity difference between O and S. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Oxygen induced band-gap reduction in ZnOxSe1,x alloys

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 3 2004
W. Shan
Abstract The effect of alloying a small amount of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in MBE-grown ZnOxSe1,x epitaxial films (0 , x , 0.0135) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by the O incorporation. Both effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction band edge. ( 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]