Home  About us  Contact
 

Wire Arrays (wire + array)

Distribution by Scientific Domains
Physics and Astronomy50%

Selected Abstracts

Heterogeneous Plasma-Producing Structures at Current Implosion of a Wire Array

CONTRIBUTIONS TO PLASMA PHYSICS, Issue 8 2005
E. V. Grabovsky
Abstract Characteristic properties of the plasma production process have been considered for the case of megampere currents flowing through hollow cylindrical wire arrays of the Angara-5-1 facility. In 3-4 nanoseconds after voltage applying to the wire surfaces there appear a plasma layer. The system becomes heterogeneous, i.e. consisting of a kernel of metal wires and a plasma layer. In several nanoseconds the current flow goes from metal to plasma, which results in reducing the electric field strength along the wire. The Joule heat energy delivered to the metal before the moment of complete current trapping by plasma is insufficient for the whole mass transition to a hot plasma state. The X-ray radiography techniques made it possible to detect and study dense clusters of substance of ,1g/cm3 at a developed discharge stage. The radial expansion velocity of ,104 cm/s measured at the 70-th nanosecond after the current start allows treating the dense core at a late stage in the form of a submicron heterogeneous structure from its liquid and slightly ionized gas phase. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Densely Packed Arrays of Ultra-High-Aspect-Ratio Silicon Nanowires Fabricated using Block-Copolymer Lithography and Metal-Assisted Etching

ADVANCED FUNCTIONAL MATERIALS, Issue 15 2009
Shih-Wei Chang
Abstract Metal-assisted etching is used in conjunction with block-copolymer lithography to create ordered and densely-packed arrays of high-aspect-ratio single-crystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19,nm and 10,nm, respectively, are created as either continuous carpets or as carpets within trenches. Wires with aspect ratios up to 220 are fabricated, and capillary-induced clustering of wires is eliminated through post-etching critical point drying. The wires are single crystals with ,100, axis directions. The distribution of wire diameters is narrow and closely follows the size distribution of the block copolymer, with a standard deviation of 3.12,nm for wires of mean diameters 22.06,nm. Wire arrays formed in carpets and in channels have hexagonal order with good fidelity to the block copolymer pattern. Fabrication of wires in topographic features demonstrates the ability to accurately control wire placement. Wire arrays made using this new process will have applications in the creation of arrays of photonic and sensing devices. [source]

Heterogeneous Plasma-Producing Structures at Current Implosion of a Wire Array

CONTRIBUTIONS TO PLASMA PHYSICS, Issue 8 2005
E. V. Grabovsky
Abstract Characteristic properties of the plasma production process have been considered for the case of megampere currents flowing through hollow cylindrical wire arrays of the Angara-5-1 facility. In 3-4 nanoseconds after voltage applying to the wire surfaces there appear a plasma layer. The system becomes heterogeneous, i.e. consisting of a kernel of metal wires and a plasma layer. In several nanoseconds the current flow goes from metal to plasma, which results in reducing the electric field strength along the wire. The Joule heat energy delivered to the metal before the moment of complete current trapping by plasma is insufficient for the whole mass transition to a hot plasma state. The X-ray radiography techniques made it possible to detect and study dense clusters of substance of ,1g/cm3 at a developed discharge stage. The radial expansion velocity of ,104 cm/s measured at the 70-th nanosecond after the current start allows treating the dense core at a late stage in the form of a submicron heterogeneous structure from its liquid and slightly ionized gas phase. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Arrays of Inorganic Nanodots and Nanowires Using Nanotemplates Based on Switchable Block Copolymer Supramolecular Assemblies

ADVANCED FUNCTIONAL MATERIALS, Issue 17 2009
Bhanu Nandan
Abstract Here, a novel and simple route to fabricate highly dense arrays of palladium nanodots and nanowires with sub-30,nm periodicity using nanoporous templates fabricated from supramolecular assemblies of a block copolymer, polystyrene- block -poly(4-vinylpyridine) (PS- b -P4VP) and a low molecular weight additive, 2-(4,-hydroxybenzeneazo) benzoic acid (HABA) is demonstrated. The palladium nanoparticles, which are directly deposited in the nanoporous templates from an aqueous solution, selectively migrate in the pores mainly due to their preferential attraction to the P4VP block covering the pore wall. The polymer template is then removed by oxygen plasma etching or pyrolysis in air resulting in palladium nanostructures whose large scale morphology mirrors that of the original template. The method adopted in this work is general and versatile so that it could easily be extended for patterning a variety of metallic materials into dot and wire arrays. [source]

Cover Picture: Photolithographic Route to the Fabrication of Micro/Nanowires of III,V Semiconductors (Adv. Funct.

ADVANCED FUNCTIONAL MATERIALS, Issue 1 2005
Mater.
Abstract The cover shows a patterned assembly of GaAs nanowires with their ends tethered to a bulk single-crystal wafer as described on p.,30 by Rogers and co-workers. These wires, which have triangular cross-sections, were fabricated via a top,down process that combines photolithography and anisotropic chemical etching. Nano/microwires of semiconducting materials (e.g., GaAs and InP) with triangular cross-sections can be fabricated by "top,down" approaches that combine lithography of high-quality bulk wafers (using either traditional photolithography or phase-shift optical lithography) with anisotropic chemical etching. This method gives good control over the lateral dimensions, lengths, and morphologies of free-standing wires. The behaviors of many different resist layers and etching chemistries are presented. It is shown how wire arrays with highly ordered alignments can be transfer printed onto plastic substrates. This "top,down" approach provides a simple, effective, and versatile way of generating high-quality single-crystalline wires of various compound semiconductors. The resultant wires and wire arrays have potential applications in electronics, optics, optoelectronics, and sensing. [source]

Structural and optical properties of ZnSe-based diluted magnetic semiconductor quantum-well wire arrays by wet chemical etching

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2010
Tsutomu Muranaka
Abstract The ZnSe-based mesa structures with well-defined and smooth facets were successfully demonstrated by using molecular beam epitaxy (MBE) and wet chemical etching. The ZnSe structures were found to be bound by (111) and (-1-11) facets along the [-110] direction, and bound by (1-11) and (-111) facets along the [110] direction, respectively. The intensities of the non-polarized PL peaks from the [-110]- and [110]-oriented QWW structures were almost proportional to the unetched region and additional decreases were not observed. The PL peaks from the QWW structures were found to be highly polarized when the polarization angle was aligned parallel to the wire direction. The degrees of the linear polarization were 18% for the [-110]-oriented QWW structure and 26% for the [-110]-oriented QWW structure, respectively. The results of the PL and magneto-PL measurements show no process-induced damage to degrade magneto-optical performance of the DMS structures by using this method. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]