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Vapor Deposition Technique (vapor + deposition_technique)

Distribution by Scientific Domains
Physics and Astronomy40%

Kinds of Vapor Deposition Technique

  • chemical vapor deposition technique
    		•

    Selected Abstracts

    Single-Crystalline V2O5 Ultralong Nanoribbon Waveguides

    ADVANCED MATERIALS, Issue 23 2009
    Bin Yan
    High-aspect-ratio V2O5 nanoribbons are synthesized by thermal vapor deposition technique. Our results reveal that the nanoribbons can serve as effective active optical waveguides. In addition, the observation of strong Raman signals collected at the end of the ribbon indicate that the unique nanostructure could play a vital role in Raman amplifers and other nonlinear photonic components. [source]

    Boron nitride phosphide thin films grown on quartz substrate by hot-filament and plasma-assisted chemical vapor deposition

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 13 2004
    X. W. Zhang
    Abstract Boron nitride phosphide films are, for the first time, grown on transparent quartz substrate by hot filament and radio-frequency plasma co-assisted chemical vapor deposition technique. XPS, XRD, SEM, and UV measurements are performed to study the chemical composition, crystallization, microstructure, and optical absorption, respectively. A "centipede-like" microstructure and undulating ground morphology on the film surface are observed, and their growth mechanism is speculated upon. The chemical composition is determined as BN1,xPx, whose characteristic XRD peak is preliminarily identified. The optical band gap can be modulated between 5.52 eV and 3.74 eV, simply by adjusting the phosphorus content in BN1,xPx through modifying the PH3 flux during the film-deposition process. The merits of the BN1,xPx film, such as high ultraviolet photoelectric sensitivity with negligible sensitivity in the visible region, modifiable wide optical band gap, and good adhesion on transparent substrate, suggest potential applications for ultraviolet photo-electronics. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Ellipsometric studies of diamond like carbon films prepared by PECVD using pulsed DC power supply

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2008
    D. K. Rai
    Abstract Diamonds like carbon (DLC) films were deposited by DC and pulsed DC glow discharge plasma enhanced chemical vapor deposition technique (PECVD). High deposition rates and uniform thin film were obtained using pulsed DC PECVD glow discharge deposition technique. The optical and surface properties of these films were investigated using transmission spectroscopy, spectroscopic Ellipsometry and atomic force microscopy. Fourier transform infrared spectroscopy was employed to examine the compositional properties and sp3/sp2 ratio in our films. Phase modulated Spectroscopic Ellipsometry (SE) in wide range of 300-1650 nm was used to determine the complex refractive index (ñ (,) = n (,) +ik (,)) using Forouhi-Bloomer amorphous model in the analyses of SE data. The extracted parameters are reported. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

    Deposition of copper-doped iron sulfide (CuxFe1,xS) thin films using aerosol-assisted chemical vapor deposition technique

    APPLIED ORGANOMETALLIC CHEMISTRY, Issue 10 2010
    Sujit D. Disale
    Abstract Copper-doped iron sulfide (CuxFe1,xS, x = 0.010,0.180) thin films were deposited using a single-source precursor, Cu(LH)2Cl2 (LH = monoacetylferrocene thiosemicarbazone), by aerosol-assisted chemical vapor deposition technique. The Cu-doped FeS thin films were deposited at different substrate temperatures, i.e. 250, 300, 350, 400 and 450 °C. The deposited thin films were characterized by X-ray diffraction (XRD) patterns, Raman spectra, scanning electron microscopy, energy dispersive X-ray analysis (EDX) and atomic force microscopy. XRD studies of Cu-doped FeS thin films at all the temperatures revealed formation of single-phase FeS structure. With increasing substrate temperature from 250 to 450 °C, there was change in morphology from wafer-like to cylindrical plate-like. EDX analysis showed that the doping percentage of copper increased as the substrate temperature increased from 250 to 450 °C. Raman data supports the doping of copper in FeS films. Copyright © 2010 John Wiley & Sons, Ltd. [source]