Ultraviolet Photoelectron Spectroscopy (ultraviolet + photoelectron_spectroscopy)

Distribution by Scientific Domains


Selected Abstracts


Enhanced Performance of Fullerene n-Channel Field-Effect Transistors with Titanium Sub-Oxide Injection Layer

ADVANCED FUNCTIONAL MATERIALS, Issue 9 2009
Shinuk Cho
Abstract Enhanced performance of n-channel organic field-effect transistors (OFETs) is demonstrated by introducing a titanium sub-oxide (TiOx) injection layer. The n-channel OFETs utilize [6,6]-phenyl-C61 butyric acid methyl ester (PC61BM) or [6,6]-phenyl-C71 butyric acid methyl ester (PC71BM) as the semiconductor in the channel. With the TiOx injection layer, the electron mobilities of PC61BM and PC71BM FET using Al as source/drain electrodes are comparable to those obtained from OFETs using Ca as the source/drain electrodes. Direct measurement of contact resistance (Rc) shows significantly decreased Rc values for FETs with the TiOx layer. Ultraviolet photoelectron spectroscopy (UPS) studies demonstrate that the TiOx layer reduces the electron injection barrier because of the relatively strong interfacial dipole of TiOx. In addition to functioning as an electron injection layer that eliminates the contact resistance, the TiOx layer acts as a passivation layer that prevents penetration of O2 and H2O; devices with the TiOx injection layer exhibit a significant improvement in lifetime when exposed to air. [source]


Energy Level Alignment and Interactions at Potential Contacts for Spin Injection into Organic Semiconductors,

ADVANCED ENGINEERING MATERIALS, Issue 4 2009
Mandy Grobosch
The present study provides the interface electronic properties between La0.7Sr0.3MnO3 and two archetype organic semiconductors, CuPc and , -6T using a combined X-ray- and ultraviolet photoelectron spectroscopy. La0.7Sr0.3MnO3 is a ferromagnetic metal and can be used to inject spin-polarized current into organic semiconductors. The energy level alignment depends on the cleaning procedure that is applied to the La0.7Sr0.3MnO3 surface prior to deposition of the organic semiconductor. [source]


Origins of Improved Hole-Injection Efficiency by the Deposition of MoO3 on the Polymeric Semiconductor Poly(dioctylfluorene- alt -benzothiadiazole)

ADVANCED FUNCTIONAL MATERIALS, Issue 23 2009
Yasuo Nakayama
Abstract The electronic structure of the interfaces formed after deposition of MoO3 hole-injection layers on top of a polymer light-emitting material, poly(dioctylfluorene- alt -benzothiadiazole) (F8BT), is studied by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy and metastable atom electron spectroscopy. Significant band bending is induced in the F8BT film by MoO3 "acceptors" that spontaneously diffuse into the F8BT "host" probably driven by kinetic energy of the deposited hot MoO3. Further deposition leads to the saturation of the band bending accompanied by the formation of MoO3 overlayers. Simultaneously, a new electronic state in the vicinity of the Fermi level appears on the UPS spectra. Since this peak does not appear in the bulk MoO3 film, it can be assigned as an interface state between the MoO3 overlayer and underlying F8BT film. Both band bending and the interface state should result from charge transfer from F8BT to MoO3, and they appear to be the origin of the hole-injection enhancement by the insertion of MoO3 layers between the F8BT light-emitting diodes and top anodes. [source]


On the mechanism of conductivity enhancement and work function control in PEDOT:PSS film through UV-light treatment

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2010
Abderrafia Moujoud
Abstract In this work, we study the effect of UV light on the work function of PEDOT:PSS films. The authors found that UV irradiation lead to an increase in the work function. Several devices with UV exposed and unexposed PEDOT:PSS were fabricated and measured. The current,voltage characteristics have been obtained for ITO/PEDOT:PSS/InZnO samples. We found that UV irradiated devices show better electrical characteristics and lead to Ohmic contact. The trend in device performance was explained by the observed changes in the work function of the PEDOT:PSS layer. The change in the work function was measured by ultraviolet photoelectron spectroscopy. The structural and morphological properties of PEDOT:PSS films with and without UV treatment were investigated by X-ray photoelectron spectroscopy and atomic force microscopy techniques. The change in the work function of PEDOT:PSS is mainly due to the surface conformational change. The stability of devices with and without UV treatment has been investigated under normal environmental conditions. Electrical properties of the devices have been studied over a period of 30 and 60 days. The stability tests show that devices with UV treatment are more stable that those without UV treatment. [source]


Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2×2 surface

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
P. Lorenz
Abstract GaN(0001)-2×2 surfaces were investigated by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) as well as X-ray photoelectron spectroscopy (XPS). Contamination- and metal-free GaN thin films with a 2×2 reconstruction and a rms roughness below 1 nm were grown on 6H-SiC(0001) by plasma assisted molecular beam epitaxy (PAMBE). The valence band structure of the surface was investigated in-situ with ARUPS along the and directions of the surface Brillouin zone. Weak dispersive surface states related to the unreconstructed GaN surface or to the 2×2 superstructure as well as the dispersion of electron states of the bulk band structure are identified and compared to available results from density functional theory (DFT) calculations [Phys. Rev. B 77, 115120 (2008)] for GaN(0001). (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Influence of Molecular Order on the Local Work Function of Nanographene Architectures: A Kelvin-Probe Force Microscopy Study

CHEMPHYSCHEM, Issue 11 2005
Vincenzo Palermo Dr.
Abstract We report a Kelvin-probe force microscopy (KPFM) investigation on the structural and electronic properties of different submicron-scale supramolecular architectures of a synthetic nanographene, including extended layers, percolated networks and broken patterns grown from solutions at surfaces. This study made it possible to determine the local work function (WF) of the different , -conjugated nanostructures adsorbed on mica with a resolution below 10 nm and 0.05 eV. It revealed that the WF strongly depends on the local molecular order at the surface, in particular on the delocalization of electrons in the , -states, on the molecular orientation at surfaces, on the molecular packing density, on the presence of defects in the film and on the different conformations of the aliphatic peripheral chains that might cover the conjugated core. These results were confirmed by comparing the KPFM-estimated local WF of layers supported on mica, where the molecules are preferentially packed edge-on on the substrate, with the ultraviolet photoelectron spectroscopy microscopically measured WF of layers adsorbed on graphite, where the molecules should tend to assemble face-on at the surface. It appears that local WF studies are of paramount importance for understanding the electronic properties of active organic nanostructures, being therefore fundamental for the building of high-performance organic electronic devices, including field-effect transistors, light-emitting diodes and solar cells. [source]