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Trap Density (trap + density)
Selected AbstractsThe Influence of Film Morphology in High-Mobility Small-Molecule:Polymer Blend Organic TransistorsADVANCED FUNCTIONAL MATERIALS, Issue 14 2010Jeremy Smith Abstract Organic field-effect transistors (OFETs) based upon blends of small molecular semiconductors and polymers show promise for high performance organic electronics applications. Here the charge transport characteristics of high mobility p-channel organic transistors based on 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene:poly(triarylamine) blend films are investigated. By simple alteration of the film processing conditions two distinct film microstructures can be obtained: one characterized by small spherulitic grains (SG) and one by large grains (LG). Charge transport measurements reveal thermally activated hole transport in both SG and LG film microstructures with two distinct temperature regimes. For temperatures >115,K, gate voltage dependent activation energies (EA) in the range of 25,60 meV are derived. At temperatures <115,K, the activation energies are smaller and typically in the range 5,30 meV. For both film microstructures hole transport appears to be dominated by trapping at the grain boundaries. Estimates of the trap densities suggests that LG films with fewer grain boundaries are characterized by a reduced number of traps that are less energetically disordered but deeper in energy than for small SG films. The effects of source and drain electrode treatment with self-assembled monolayers (SAMs) on current injection is also investigated. Fluorinated thiol SAMs were found to alter the work function of gold electrodes by up to ,1,eV leading to a lower contact resistance. However, charge transport analysis suggests that electrode work function is not the only parameter to consider for efficient charge injection. [source] Variations in Hole Injection due to Fast and Slow Interfacial Traps in Polymer Light-Emitting Diodes with InterlayersADVANCED FUNCTIONAL MATERIALS, Issue 1 2010M. James Harding Abstract Detailed studies on the effect of placing a thin (10,nm) solution-processable interlayer between a light-emitting polymer (LEP) layer and a poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic)-acid-coated indium tin oxide anode is reported; particular attention is directed at the effects on the hole injection into three different LEPs. All three different interlayer polymers have low ionization potentials, which are similar to those of the LEPs, so the observed changes in hole injection are not due to variations in injection barrier height. It is instead shown that changes are due to variations in hole trapping at the injecting interface, which is responsible for varying the hole current by up to two orders of magnitude. Transient measurements show the presence of very fast interfacial traps, which fill the moment charge is injected from the anode. These can be considered as injection pathway dead-ends, effectively reducing the active contact surface area. This is followed by slower interfacial traps, which fill on timescales longer than the carrier transit time across the device, further reducing the total current. The interlayers may increase or decrease the trap densities depending on the particular LEP involved, indicating the dominant role of interfacial chain morphology in injection. Penetration of the interlayer into the LEP layer can also occur, resulting in additional changes in the bulk LEP transport properties. [source] To sample or eradicate?JOURNAL OF APPLIED ECOLOGY, Issue 4 2008A cost minimization model for monitoring, managing an invasive species Summary 1Considerable effort is expended by national and local governments to exclude alien species via detection and eradication of invading populations, but these efforts are not necessarily designed in the most economically or biologically efficient manner. 2Using the invasion of the European strain of the gypsy moth Lymantria dispar into the USA as a case study, we develop an analytical model to determine the optimal trap density for detecting isolated infestations. Most models focus on monitoring or eradication costs only; our model considers the costs of both detection and eradication when determining the best monitoring strategy. 3The model assumes that all isolated populations must be located and eradicated by the conclusion of a programme. For programmes lasting longer than 1 year, it is more worthwhile to proactively monitor and manage rather than to wait until the programme is over. 4For a management programme of a given length, optimal trap density is most influenced by the growth rate of the infestation. Optimal trap densities are lowest for infestations with very low growth rates (because they remain small and therefore are less expensive to eradicate) or very high growth rates (because they are easier to detect), and highest for infestations with moderate growth rates (because they are neither inexpensive to eradicate nor easy to detect). 5Our model is useful in setting a baseline level of monitoring for isolated incidents of gypsy moth invasion. Analysis of data in two US states show that actual trap densities are far higher than the optimal densities from the model. The difference suggests risk aversion may play a role in real systems. 6Synthesis and applications. Our model suggests that we can improve the efficiency of detection and eradication programmes for isolated infestations by optimizing detection effort relative to infestation growth rates and management programme duration. It also clearly demonstrates the importance of balancing the costs and benefits of both detection and eradication when developing invasive species monitoring programmes. [source] Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectricsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010D. Müller-Sajak Abstract We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n-Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultra-thin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high-k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr0.3O. This demonstrates the importance of both chemical and structural interface effects (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Electrical Properties of MIS Capacitors with AlN Films Synthesized by Pulsed Laser DepositionPLASMA PROCESSES AND POLYMERS, Issue 2 2006Silvia Bakalova Abstract Summary: We manufactured for the first time MIS capacitors based on aluminium nitride (AlN) thin films synthesized by Pulsed Laser Deposition (PLD). AlN films were deposited on Si substrates by PLD from AlN targets in nitrogen ambient by multi-pulse ablation using a UV KrF excimer laser source (,,=,248 nm, ,,=,7 ns). The structures we prepared were electrically characterized by C-V and I-V complementary measurements. Our studies evidence the formation of good interfaces, and of defects into the film bulk which are electrically active. This justifies further developments in view of future applications of PLD synthesized AlN thin films as a dielectric alternatives to SiO2. The distribution of the interface trap densities (Dit) in Si bandgap for AlN/Si structures synthesized at different N2 pressures. [source] DC conduction in bis(dimethylglyoximato)palladium(II) thin filmsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 8 2007A. A. Dakhel Abstract Bis(dimethylglyoximato)palladium (II) complex thin films of polycrystalline structure were prepared by sublimation in a vacuum at 140°C on p-Si substrates. After carrying out the characterisation of the prepared films by X-ray diffraction and X-ray fluorescence methods, Al-complex-Si MIS devices were fabricated. The constructed MIS structure was characterised by measuring the capacitance as a function of gate voltage at 1 MHz. The dependence of dc-current density on gate voltage and temperature in the range of 293 - 328 K of the MIS device was measured. It was found that the experimental data follow the trap-charge-limited space-charge-limited conductivity mechanism, from which the total concentration and the exponential energy distribution of the trap density were determined. In general, the measured quantities suggest that the conduction can be realised by thermally assisted hopping between localised states bundled in a very narrow band lying energetically near the mobility band edge. Moreover, results show that it is possible to use a film of the complex in applications of low-k dielectric material. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High-Performance Air-Processed Polymer,Fullerene Bulk Heterojunction Solar CellsADVANCED FUNCTIONAL MATERIALS, Issue 22 2009Chang-Yong Nam Abstract High photovoltaic device performance is demonstrated in ambient-air-processed bulk heterojunction solar cells having an active blend layer of organic poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61 -butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state-of-the-art bulk heterojunction devices fabricated in air-free environments. High-resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post-fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an ,4,nm aluminum oxide hole-blocking layer present at the electron-collecting contact interface. [source] Surface-Modified High- k Oxide Gate Dielectrics for Low-Voltage High-Performance Pentacene Thin-Film Transistors,ADVANCED FUNCTIONAL MATERIALS, Issue 6 2007S. Kim Abstract In this study, pentacene thin-film transistors (TFTs) operating at low voltages with high mobilities and low leakage currents are successfully fabricated by the surface modification of the CeO2,SiO2 gate dielectrics. The surface of the gate dielectric plays a crucial role in determining the performance and electrical reliability of the pentacene TFTs. Nearly hysteresis-free transistors are obtained by passivating the devices with appropriate polymeric dielectrics. After coating with poly(4-vinylphenol) (PVP), the reduced roughness of the surface induces the formation of uniform and large pentacene grains; moreover, ,OH groups on CeO2,SiO2 are terminated by C6H5, resulting in the formation of a more hydrophobic surface. Enhanced pentacene quality and reduced hysteresis is observed in current,voltage (I,V) measurements of the PVP-coated pentacene TFTs. Since grain boundaries and ,OH groups are believed to act as electron traps, an OH-free and smooth gate dielectric leads to a low trap density at the interface between the pentacene and the gate dielectric. The realization of electrically stable devices that can be operated at low voltages makes the OTFTs excellent candidates for future flexible displays and electronics applications. [source] Microstructural Origin of High Mobility in High-Performance Poly(thieno-thiophene) Thin-Film TransistorsADVANCED MATERIALS, Issue 6 2010Chenchen Wang High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure). [source] To sample or eradicate?JOURNAL OF APPLIED ECOLOGY, Issue 4 2008A cost minimization model for monitoring, managing an invasive species Summary 1Considerable effort is expended by national and local governments to exclude alien species via detection and eradication of invading populations, but these efforts are not necessarily designed in the most economically or biologically efficient manner. 2Using the invasion of the European strain of the gypsy moth Lymantria dispar into the USA as a case study, we develop an analytical model to determine the optimal trap density for detecting isolated infestations. Most models focus on monitoring or eradication costs only; our model considers the costs of both detection and eradication when determining the best monitoring strategy. 3The model assumes that all isolated populations must be located and eradicated by the conclusion of a programme. For programmes lasting longer than 1 year, it is more worthwhile to proactively monitor and manage rather than to wait until the programme is over. 4For a management programme of a given length, optimal trap density is most influenced by the growth rate of the infestation. Optimal trap densities are lowest for infestations with very low growth rates (because they remain small and therefore are less expensive to eradicate) or very high growth rates (because they are easier to detect), and highest for infestations with moderate growth rates (because they are neither inexpensive to eradicate nor easy to detect). 5Our model is useful in setting a baseline level of monitoring for isolated incidents of gypsy moth invasion. Analysis of data in two US states show that actual trap densities are far higher than the optimal densities from the model. The difference suggests risk aversion may play a role in real systems. 6Synthesis and applications. Our model suggests that we can improve the efficiency of detection and eradication programmes for isolated infestations by optimizing detection effort relative to infestation growth rates and management programme duration. It also clearly demonstrates the importance of balancing the costs and benefits of both detection and eradication when developing invasive species monitoring programmes. [source] Sampling plan for the coffee leaf miner Leucoptera coffeella with sex pheromone trapsJOURNAL OF APPLIED ENTOMOLOGY, Issue 6 2008T. Bacca Abstract The population density of the coffee leaf miner Leucoptera coffeella (Guérin-Méneville & Perrottet) (Lep., Lyonetiidae) can be estimated using pheromone traps in coffee fields as male capture reflects this pest damage based on previous correlational study. However, the spatial distribution of pheromone traps and their density are necessary to optimize the sampling procedure with pheromone traps. Therefore, the objectives of the present study were to determine the pheromone trap density required per hectare to sample coffee leaf miner populations and to determine the spatial distribution of the males of this pest species. The males were sampled every 8 days in 12 consecutive evaluations. Taylor's power law and frequency distributions were used to recognize the distribution of the male capture data, which followed a negative binomial distribution. A common K was obtained, allowing the establishment of a single conventional sampling plan for the 12 fields investigated. The adjusted sampling plan requires eight traps in an area of 30 ha for a 25% precision error. Kriging-generated maps allowed the simulation of male captures for 8, 12 and 20 traps per 30 ha and the results were compared with those obtained with absolute sampling resulting in R2 -values of 0.30, 0.57 and 0.60 respectively. The traps were able to identify the more highly infested areas within the field and are a precise and efficient tool for sampling populations of L. coffeella. [source] Enhanced reliability of magnetic tunnel junctions with thermal annealingPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2004Kwang-Seok Kim Abstract Time-dependent dielectric breakdown (TDDB) of magnetic tunnel junctions (MTJs) under a constant voltage stress, tunneling magnetoresistance (TMR), and barrier properties, e.g. effective barrier height and thickness, were investigated as a function of thermal annealing temperatures. A Weibull failure distribution function was plotted in terms of time to breakdown (TBD) of MTJs. The TBD when 63 fraction of as-fabricated MTJs cumulatively failed increased significantly after thermal annealing at 210 °C while the TMR also increased from 8.85% to 14.22% before and after thermal annealing at 210 °C, respectively. We believe that the enhanced reliability of the MTJs is due to healing effect of bulk defects in the barrier during the annealing process, likely leading to the reduction of defect trap density. The reduction of bulk defects in the barrier was also confirmed by the lowered 1/f noise power spectral density from voltage fluctuation measurements. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Low-temperature MBE-grown GaBiAs layers for terahertz optoelectronic applicationsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2009Vaidas Pa, ebutas Abstract Gallium bismide arsenide epitaxial layers were grown by molecular-beam-epitaxy at low substrate temperatures and investigated for their suitability in terahertz optoelectronic applications. Optical pump-terahertz probe measurements on these layers have shown that carrier dynamics can be described using two characteristic times. The faster decay component has characteristic times shorter than 1 ps, whereas the slower component decays in several tens of picoseconds. Fitting the electron lifetimes dependence on optical excitation level the electron trapping cross-section and trap density were determined. The possible mechanism of carrier recombination was discussed. The photoconductive terahertz emitters and detectors made from GaBiAs layers have been manufactured and used in time-domain spectroscopy system with a signal bandwidth larger than 4.5 THz. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||||||||