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Thermal Evaporation (thermal + evaporation)
Terms modified by Thermal Evaporation Selected AbstractsAn Approach to the Synthesis of Silicon Carbide Nanowires by Simple Thermal Evaporation of Ferrocene onto Silicon WafersEUROPEAN JOURNAL OF INORGANIC CHEMISTRY, Issue 25 2007Jun-Jie Niu Abstract Scales of silicon carbide nanowires (SiC-NWs) with high quality were synthesized by direct thermal evaporation of ferrocene onto silicon wafers at high temperature. Ferrocene decomposed into iron and carbon, which was subsequently treated with silicon to form SiC-NWs at high temperature. The SiC-NWs possess small diameters of , 20 nm and lengths of several ,ms. Furthermore, the samples show a uniform morphology, crystalline structure, and a very thin oxide layer. The main crystal direction of [111] was confirmed by high-resolution field-emission-transmission electron microscopy (HR-FETEM). The Raman scattering spectra showed two peaks at , 796 (TO) and , 980 cm,1 (LO) with varying intensity ratios at different positions. The band line fluctuation was contributed to the Raman selection rules. With reference to the experimental results, we suggested a tentative growth model according to the vapor,liquid,solid (VLS) mechanism. (© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2007) [source] Preparation, structure and photoluminescence properties of SiO2,coated ZnS nanowiresCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2010Changhyun Jin Abstract It is essential to passivate one-dimensional (1D) nanostructures with insulating materials to avoid crosstalking as well as to protect them from contamination and oxidation. The structure and influence of thermal annealing on the photoluminescence properties of ZnS-core/SiO2 -shell nanowires synthesized by the thermal evaporation of ZnS powders followed by the sputter deposition of SiO2 were investigated. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the core-shell nanowires were single crystal zinc blende-type ZnO and amorphous SiO2, respectively. Photoluminescence (PL) measurement showed that the core-shell nanowires had a green emission band centered at around 525 nm with a shoulder at around 385 nm. The PL emission of the core-shell nanowires was enhanced in intensity by annealing in an oxidative atmosphere and further enhanced by subsequently annealing in a reducing atmosphere. Also the origin of the enhancement of the green emission by annealing is discussed based on the energy-dispersive X-ray spectroscopy analysis results. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] An Approach to the Synthesis of Silicon Carbide Nanowires by Simple Thermal Evaporation of Ferrocene onto Silicon WafersEUROPEAN JOURNAL OF INORGANIC CHEMISTRY, Issue 25 2007Jun-Jie Niu Abstract Scales of silicon carbide nanowires (SiC-NWs) with high quality were synthesized by direct thermal evaporation of ferrocene onto silicon wafers at high temperature. Ferrocene decomposed into iron and carbon, which was subsequently treated with silicon to form SiC-NWs at high temperature. The SiC-NWs possess small diameters of , 20 nm and lengths of several ,ms. Furthermore, the samples show a uniform morphology, crystalline structure, and a very thin oxide layer. The main crystal direction of [111] was confirmed by high-resolution field-emission-transmission electron microscopy (HR-FETEM). The Raman scattering spectra showed two peaks at , 796 (TO) and , 980 cm,1 (LO) with varying intensity ratios at different positions. The band line fluctuation was contributed to the Raman selection rules. With reference to the experimental results, we suggested a tentative growth model according to the vapor,liquid,solid (VLS) mechanism. (© Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2007) [source] Field Emission and Cathodoluminescence of ZnS Hexagonal Pyramids of Zinc Blende Structured Single CrystalsADVANCED FUNCTIONAL MATERIALS, Issue 3 2009Zhi-Gang Chen Abstract Single-crystal hexagonal pyramids of zinc blende ZnS are fabricated by facile thermal evaporation in an ammonia atmosphere at 1150,°C. It is found that ZnS pyramids grow along the [111] crystal axis and possess a sharp tip with a diameter of ,10,nm and a micrometer-sized base. The structural model and growth mechanism are proposed based on crystallographic characteristics. This unique ZnS pyramid structure exhibits a low turn-on field (2.81,V µm,1), a high field-enhancement factor (over 3000), a large field-emission current density (20,mA cm,2), and good stability with very small fluctuation (0.9%). These superior field-emission properties are clearly attributed to the pyramid morphology, with micrometer-sized bases and nanotips, and high crystallinity. Moreover, a stable UV emission of 337,nm at room temperature is observed and can be ascribed to the band emission of the zinc blende phase. These results suggest that the ZnS hexagonal pyramids can be expected to find promising applications as field emitters and optoelectronic devices. [source] Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices,ADVANCED FUNCTIONAL MATERIALS, Issue 12 2008Bhola Nath Pal Abstract A solution processed n-channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zinc acetate solution concentration. The highest electron mobility achieved by this method is 7.2,cm2 V,1 s,1 with On/Off ratio of 70. This electron mobility is higher than for the most recently reported solution processed ZnO transistor. We also fabricated bilayer transistors where the first layer is ZnO, and the second layer is pentacene, a p-channel organic which is deposited by thermal evaporation. By changing the ZnO grain size (or thickness) this type of bilayer transistor shows p-channel, ambipolar and n-channel behavior. For the ambipolar transistor, well balanced electron and hole mobilities are 7.6,×,10,3 and 6.3,×,10,3,cm2 V,1 s,1 respectively. When the ZnO layer is very thin, the transistor shows p-channel behavior with very high reversible hysteresis. The nonvolatile tuning function of this transistor was investigated. [source] 2,7-Carbazolenevinylene-Based Oligomer Thin-Film Transistors: High Mobility Through Structural Ordering,ADVANCED FUNCTIONAL MATERIALS, Issue 10 2005N. Drolet Abstract We have fabricated organic field-effect transistors based on thin films of 2,7-carbazole oligomeric semiconductors 1,4-bis(vinylene-(N -hexyl-2-carbazole))phenylene (CPC), 1,4-bis(vinylene-(N,-methyl-7,-hexyl-2,-carbazole))benzene (RCPCR), N -hexyl-2,7-bis(vinylene-(N -hexyl-2-carbazole))carbazole (CCC), and N -methyl-2,7-bis(vinylene-(7-hexyl- N -methyl-2-carbazole))carbazole (RCCCR). The organic semiconductors are deposited by thermal evaporation on bare and chemically modified silicon dioxide surfaces (SiO2/Si) held at different temperatures varying from 25 to 200,°C during deposition. The resulting thin films have been characterized using UV-vis and Fourier-transform infrared spectroscopies, scanning electron microscopy, and X-ray diffraction, and the observed top-contact transistor performances have been correlated with thin-film properties. We found that these new ,-conjugated oligomers can form highly ordered structures and reach high hole mobilities. Devices using CPC as the active semiconductor have exhibited mobilities as high as 0.3,cm2,V,1,s,1 with on/off current ratios of up to 107. These features make CPC and 2,7-carbazolenevinylene-based oligomers attractive candidates for device applications. [source] ZnSe,Si Bi-coaxial Nanowire Heterostructures,ADVANCED FUNCTIONAL MATERIALS, Issue 9 2005R. Wang Abstract We report on the fabrication, structural characterization, and luminescence properties of ZnSe/Si bi-coaxial nanowire heterostructures. Uniform ZnSe/Si bi-coaxial nanowire heterostructures are grown on silicon substrates by the simple one-step thermal evaporation of ZnSe powder in the presence of hydrogen. Both ZnSe and silicon are single-crystalline in the bi-coaxial nanowire heterostructures, and there is a sharp interface along the nanowire axial direction. Furthermore, secondary nanostructures of either ZnSe nanobrushes or a SiOx sheath are also grown on the primary bi-coaxial nanowires, depending on the ratio of the source materials. The experimental evidence strongly suggests that bi-coaxial nanowires are formed via a co-growth mechanism, that is, ZnSe terminates specific surfaces of silicon and leads to anisotropic, one-dimensional silicon growth, which simultaneously serves as preferential nucleation sites for ZnSe, resulting in the bi-coaxial nanowire heterostructures. In addition, the optical properties of ZnSe/Si nanowires are investigated using low-temperature photoluminescence spectroscopy. [source] Single-Catalyst Confined Growth of ZnS/Si Composite Nanowires,ADVANCED MATERIALS, Issue 2 2005J. Zhan Side-by-side ZnS/Si composite nanowires have been prepared by tin-catalyst confined growth. Simultaneous thermal evaporation of ZnS and Si powders provides precursor vapors that condense on metallic Sn droplets, resulting in the nucleation and anisotropic growth of composite nanowires made of adjacent ZnS and Si domains (see Figure). The diameters of composite nanowires can reach as low as 15,nm. [source] Size-Dependent Periodically Twinned ZnSe Nanowires,ADVANCED MATERIALS, Issue 16 2004Q. Li Cubic ZnSe nanowires with periodically alternating twins along the wire growth direction (see Figure) have been synthesized using thermal evaporation with a Au catalyst. The periodicity of the alternating twins has a linear dependence on the diameter of the nanowires. Sharp excitonic peaks dominating the low-temperature photoluminescence spectrum of the nanowires reveal the high quality of their electronic structure despite the large unpassivated surface and interface associated with the twinned nanowire configuration. [source] Hydrogen-Assisted Thermal Evaporation Synthesis of ZnS Nanoribbons on a Large Scale,ADVANCED MATERIALS, Issue 4 2003Y. Jiang Semiconductor nanoribbons of ZnS have been synthesized on a large scale via hydrogen-assisted thermal evaporation. The product is characterized by means of electron microscopy and energy-dispersive X-ray spectroscopy, which show that the as-prepared ZnS nanoribbons are single crystals with uniform morphology. A stable and strong emission band centered at 534.5 nm is also associated with the nanoribbons. [source] Optoelectronic properties of transparent p-type semiconductor CuxS thin filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2010P. Parreira Abstract Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50,nm thick films. However, due to its high conductivity at room temperature, 10,nm in thickness seems to be appropriate for device use. Cu2S thin films with 10,nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. [source] 1.5 µm luminescence of silicon nanowires fabricated by thermal evaporation of SiOPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2006G. Jia Abstract Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect-related D1 and D2 lines and is supposed to be formed by extended defects within the NWs that are decorated with oxygen. Moreover, luminescence bands are found that are related to Si oxide and/or the interface between Si and Si oxide. In addition, the Si band-to-band line and the G center are observed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effect of composition on the optical properties of the quaternary CuxAg1,xInTe2 thin filmsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003E. A. El-Sayad Abstract Thin films of CuxAg1,xInTe2 solid solutions (x = 0.25, 0.50 and 0.75) were deposited by thermal evaporation of prereacted materials on glass substrates. X-ray diffraction (XRD) studies has revealed that the as-deposited and thermally annealed films are polycrystalline with single-phase of a tetragonal chalcopyrite structure as that of bulk material with (112) predominant reflecting plane. The films compositions were confirmed by using energy dispersive analysis of X-rays (EDAX). The refractive index, n, and the extinction coefficient, k, of the annealed films with different compositions were determined in the spectral range, 400,2500 nm. Three characteristic energy gaps have been determined from the analysis of optical absorption spectrum for each composition. The three energy gaps are attributed to the optical transitions from the valence sub-bands to the conduction band minimum. Besides, a fourth energy gap has also been obtained for each composition, which may be attributed to the transition from the copper 3d-level to the conduction band minimum. However, the band gaps showed linear variation with the value of x. [source] Fabrication of 2-D nanostructures via metal deposition through a colloidal mask: comparison between thermal evaporation and RF magnetron sputteringPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2008Magdalena Ulmeanu Abstract We use spherical polystyrene beads in the size range from 500 nm - 2 ,m to form lithographic masks on surfaces. The masks consist of hexagonally arranged monolayers of these particles formed independently via a self-organized process upon solvent evaporation. With the help of the so called floating technique, the masks can be transferred to almost any arbitrary substrate. They have been utilized e.g. as masks for vacuum deposition, ion etching, or as masters for micro-contact-printing. Current research concentrates on the structure differences when the film deposition was done by thermal evaporation or RF magnetron sputtering. Investigations have been done on different metallic films, with emphasizes on Au thin film. The structures were investigated by atomic force microscopy (AFM) and scanning force microscopy (SEM). The differences in the nanostructures obtained after the removal of the colloidal mask will be evaluated in respect with the thin film deposition technique. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] CMP properties and fabrication of OLED using MEH-PPVPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 10 2008Woo-Sun Lee Abstract The interface between the electrode and organic layer in organic light emitting diode (OLED) has been reported as an important factor to influence the electrical and luminescent properties. Indium tin oxide (ITO) is commonly used as the anode material. ITO thin film has been deposited on glass substrate by radio frequency (RF) magnetron sputtering. And it was used as an anode contact to fabricate OLED device. The OLED devices with ITO/MEH-PPV [2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene]/Al configuration were fabricated by thermal evaporation and spin coating, respectively. We investigated the electrical, structural and optical properties of ITO thin film, which was measured using the methods of atomic force microscope (AFM), field-emission scanning electron microscope (FESEM) and ultraviolet,visible (UV,VIS) spectrophotometer. The interface property between ITO thin film and MEH-PPV was improved as the surface of ITO thin film was smoothed and photoluminescence (PL) intensity was increased in the 680 nm range. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] X-ray study and structure simulation of amorphous tungsten oxideACTA CRYSTALLOGRAPHICA SECTION B, Issue 4 2002L. A. Lugovskaya In this work, X-ray studies of the amorphous oxide films obtained by thermal evaporation of WO3 powder in a vacuum and by anodic oxidation were carried out. X-ray diffraction patterns were obtained in the symmetric reflection geometry on a DRON-4 diffractometer (Mo K, radiation, LiF monochromator) in automatic mode. Molecular dynamics simulation of amorphous tungsten oxide atomic configurations has been carried out in the micro-canonical ensemble (NVE) for N,=,208 atoms and N,=,624 atoms, in a cubic cell, using pairwise Born,Mayer interaction potentials and periodic boundary conditions. One of the purposes of the present work is to analyze the influence of the parameters and the cutoff of the interaction potentials on the interatomic distances. The values obtained in the molecular dynamics simulation for the pair functions D(r) are compared with the experimental data for amorphous oxides in order to choose the most convenient aforesaid values. The values of the average interatomic distances and the coordination numbers obtained by both methods are also compared. The result shows that the tungsten subsystem can be well reproduced using the potential cutoff radius of about 4,Å, but the oxygen subsystem can be well reproduced when the cutoff of the potential for the W,O pairs is equal to 2.8,Å. The configuration built during the molecular dynamics experiment consists of distorted octahedra. These octahedra form chains, as in the WO3 phases of type ReO3, and hexagonal rings, of the same type as in the WO3(1/3)H2O phase, when we extract (1/3)O at every WO3 unit. The pair function D(r) and scattering intensity I(s) distribution curves calculated for simulation configurations show a satisfactory agreement with experiment. [source] Cool gas accretion, thermal evaporation, and quenching of star formation in elliptical galaxiesASTRONOMISCHE NACHRICHTEN, Issue 9-10 2009C. NipotiArticle first published online: 4 NOV 200 Abstract The most evident features of colour-magnitude diagrams of galaxies are the red sequence of quiescent galaxies, extending up to the brightest elliptical galaxies, and the blue cloud of star-forming galaxies, which is truncated at a luminosity L , L*. The truncation of the blue cloud indicates that in the most massive systems star formation must be quenched. For this to happen the virial-temperature galactic gas must be kept hot and any accreted cold gas must be heated. The elimination of accreted cold gas can be due to thermal evaporation by the hot interstellar medium, which in turn is prevented from cooling by feedback from active galactic nuclei (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] The effect of clouds on the dynamical and chemical evolution of gas-rich dwarf galaxiesASTRONOMISCHE NACHRICHTEN, Issue 9-10 2009S. Recchi Abstract We study the effects of clouds on the dynamical and chemical evolution of gas-rich dwarf galaxies, in particular focusing on two model galaxies similar to IZw18 and NGC 1569. We consider both scenarios, clouds put at the beginning of the simulation and continuously created infalling ones. Due to dynamical processes and thermal evaporation, the clouds survive only a few tens of Myr, but during this time they act as an additional cooling agent and the internal energy ofcloudy models is typically reduced by 20,40% in comparison with models without clouds. The clouds delay the development of large-scale outflows, therefore helping to retain a larger amount of gas inside the galaxy. However, especially in models with continuous creation of infalling clouds, their bullet effect can pierce the expanding supershell and create holes through which the superbubble can vent freshly produced metals. Moreover, assuming a pristine chemical composition for the clouds, their interaction with the superbubble dilutes the gas, reducing the metallicity (by up to ,0.4 dex) with respect to the one attained by diffuse models (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||||||||