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Ternary Compounds (ternary + compound)
Selected AbstractsSynthesis and Crystal Structure of Pt2Sn2Zn3, the First Ternary Compound of the Pt/Sn/Zn System.CHEMINFORM, Issue 45 2006Rainer Lux Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF. [source] ChemInform Abstract: anti-Mackay Polyicosahedral Clusters in La,Ni,Mg Ternary Compounds: Synthesis and Crystal Structure of the La43Ni17Mg5 New Intermetallic Phase.CHEMINFORM, Issue 21 2010Pavlo Solokha Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] ChemInform Abstract: Inhomogeneous 2D Linear Intergrowth Structures Among Novel Y,Cu,Mg Ternary Compounds with Yttrium/Copper Equiatomic Ratio.CHEMINFORM, Issue 29 2009Pavlo Solokha Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] Crystal Structures of Ln5Au2X Ternary Compounds (Ln: Gd, Tb, Dy, Ho, Er; X: Sb, Bi)CHEMINFORM, Issue 32 2007Yu. Verbovytsky Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF. [source] New Ternary Compounds in the Sm,Rh,Ge System.CHEMINFORM, Issue 10 2005A. V. Morozkin Abstract For Abstract see ChemInform Abstract in Full Text. [source] ChemInform Abstract: X-Ray Diffraction Study of Ge,Bi,Te Mixed-Layer Ternary Compounds.CHEMINFORM, Issue 18 2001O. G. Karpinskii Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a "Full Text" option. The original article is trackable via the "References" option. [source] Optical absorption and photoluminescence of CuAlTe2PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 8 2006B. V. Korzun Abstract The bulk crystals of the CuAlTe2 semiconductor ternary compound with the chalcopyrite structure were prepared, and their optical properties were investigated. It was determined that the value of band gap energy equals 1.69 and 1.65 eV at 105 and 293 K, respectively. The photoluminescence spectra were measured for the first time and contain broad bands with peaks at 1.09 eV (78 K) and 1.03 eV (293 K). The full width at half maximum (FWHM) for both temperatures is 0.28 eV. The origin of this band is associated with band to deep acceptor optical transition. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] X-ray diffraction by a crystal in a permanent external electric field: electric-field-induced structural response in ,-GaPO4ACTA CRYSTALLOGRAPHICA SECTION A, Issue 1 2006Semen Gorfman For the first time, site-selective distortion has been investigated for two different structural units in the ternary compound ,-GaPO4 under the influence of a permanent external electric field. Based on 54 measured reflection intensities, the electric-field-induced distortion of PO4 and GaO4 tetrahedra in ,-GaPO4 crystals is evaluated using a model of pseudoatomic displacements introduced recently [Gorfman, Tsirelson & Pietsch (2005). Acta Cryst. A61, 387396]. A stronger variation of the P,O bond lengths in the PO4 tetrahedron was found compared to the bonds in the GaO4 tetrahedron. The different distortions of the tetrahedra owing to the electric field were analysed in terms of the valence charge density of ,-GaPO4 and its topological characteristics. The larger charge of the P pseudoatom compared to the Ga atom was recognized as the main reason for the higher sensitivity of the PO4 tetrahedron to a permanent external electric field. [source] Tb2Ni2Mg3: a new structure type derived from the Ru3Al2B2 typeACTA CRYSTALLOGRAPHICA SECTION C, Issue 2 2007Pavlo Solokha Single crystals of diterbium dinickel trimagnesium, Tb2Ni2Mg3, were synthesized from the elements by induction melting. The novel compound crystallizes in the space group Cmmm with one Mg atom of site symmetry mmm and the Tb, Ni and other Mg atom in m2m positions. This ternary compound represents a new structure type that is derived from Ru3Al2B2 by way of Wyckoff site distribution. The two-layer structure of Tb2Ni2Mg3 is a new representative of a homologous linear structure series of general formula R,k+nX2nR,,2m+k based on structural fragments of the ,-Fe, CsCl and AlB2 structure types. The Tb atoms in the structure are enclosed in 17-vertex polyhedra, while rhombododecahedra and distorted rhombododecahedra surround the Mg atoms, and equatorially tricapped trigonal prisms form around the Ni atoms. All interatomic distances indicate metallic type bonding. [source] Spectroscopic phase modulated ellipsometry in application to some novel single and polycrystalline ternary compoundsPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006N. Mamedov Abstract The results of the application of the spectroscopic phase modulated ellipsometry (SPME) to a series of novel ternary compounds from anisotropic to polycrystalline are presented to show the high effectiveness of this optical technique with regard to the dielectric function of the new materials. Besides, SPME in specular reflection mode to study the polarization degree of the light reflected at specular angle is shown to be very informative in determination of the best conditions for optical measurements on rough surfaces such as, for example, surfaces of the polycrystalline ternary thiogallate compounds studied in this work. An incoherent approach relating the measured depolarization with the surface variance and optical constants of a material or thin film is proposed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurementsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010S. Sintonen Abstract The commercial significance of superlattice structures is increasing due to greater demand of optoelectronic devices, such as the light emitting diode (LED). In order to optimize these devices, an accurate and reliable characterization method is needed. This paper describes in detail the characterization of superlattices with X-ray scattering techniques. The thicknesses of the individual layers are determined by X-ray reflectivity (XRR) measurements and the state of strain, the lattice constants and the compositions of ternary compounds by X-ray diffraction (XRD) measurements. The method is non-destructive, and yields unique results, unlike characterizations based on simulation of symmetric XRD scans. These simulations were used for verification of results. The method was tested on InGaN and AlGaN superlattice structures. The measured and simulated parameter values agreed very well. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Microstructure of CuFeS2,,,CuInS2 alloysPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009B. V. Korzun Abstract Two series of alloys of the (CuFeS2,,)1,x(CuInS2)x system with molar part of CuInS2 x = 0.01, 0.03, 0.125, 0.25, 0.375, 0.50, 0.625, 0.75, 0.95, 0.97 and 0.99 and , being 0 and 0.10 were prepared from the CuFeS2,, and CuInS2 starting ternary compounds. The samples were investigated by micro structural optics using freshly-polished samples and XRPD. The studies confirmed two phase coexistences with microstructures dependent on the chemical composition. The geometric-oriented arrangement of the ,-phase with the structure of CuInS2 is found in the (CuFeS2,,)1,x(CuInS2)x system up to x equalling 0.50. It was established that the solvus of CuFeS2,, exceeds 0.05 molar parts of CuInS2, while the solvus of CuInS2 does not exceed 0.03 molar parts of CuFeS2,,. Additionally, stoichiometric composition of CuFeS2 exhibits a mixture of 3 coexisting phases of CuFeS2,,, with , from 0.14 to 0.28, bornite Cu5FeS4 and pyrrhotite Fe1,xS. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] CuIn2n+1Se3n+2 single dot structures: creation and photosensitivityPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009Yu. V. Rud Abstract Photosensitive single dot structures based on CuIn2n+1Se3n+2 (n = 0, 1, 2) bulk single crystals have been creation for the first time by means of electric-discharge welding (EDW). The stationary current-voltage characteristics and the photovoltaic properties of the structures based on CuInSe2, CuIn3Se5 and CuIn5Se8 ternary semiconductors have been studied, which show evidence for the rectification effect and photoconversion. The character of interband transitions is established and the energy bandgap variation in this type of ternary compounds is traced. It is concluded that EDW can be successfully used for the creation of photoconverters based on multi-component semiconductors. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Time-dependent evolution of crystal lattice, defects and impurities in CdIn2S4 and GaPPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 5 2009Sergei L. Pyshkin Abstract We demonstrate that in III-V and ternary compounds the natural stimuli for ordered distribution of impurities along crystal nodes and interstitials, host atoms and inherent vacancies in right lattice positions prevail over the others which could lead to a heterogenic distribution. The result is obtained in the crystals, prepared in 1963-1977, due to each 10-15 years monitoring of their optical and mechanical properties. Here we have summarized the results of the 2005-2008 monitoring and compare them with the earlier obtained data. We show that the partly inverse spinel CdIn2S4 turns into the perfect normal spinel, while in GaP the impurity ordering leads to the formation of a new type of crystal lattices. Periodically disposed impurities and inherent structural defects modify, improve and stabilize properties of the crystals. New luminescent phenomena of these crystals, including stimulated emission and "hot" luminescence have been discovered. The existing technologies help us to reproduce these naturally ordered structures and to apply them for new generation of optoelectronic devices. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | |||||||||||||