Tantalum Nitride (tantalum + nitride)

Distribution by Scientific Domains


Selected Abstracts


Microwave-Assisted Combustion Synthesis of Tantalum Nitride in a Fluidized Bed

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 2 2003
Akhil Jain
Combustion synthesis experiments in a fluidized bed have been conducted using nitrogen as the fluidizing gas for the formation of transition-metal nitrides that are potential replacements for traditional hydrodenitrogenation and hydrodesulfurization catalysts. The microwave-assisted ignition of reaction has been investigated for its potential to produce nitride overlayers on two different sizes of tantalum particle substrates. Various characterization techniques,X-ray diffractometry, energy dispersive spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy,have been used to study the presence of nitride overlayers. The results indicate that microwave assistance can permit controlled formation of tantalum nitride (Ta2N) overlayers. [source]


High-Pressure Synthesis of Tantalum Nitride Having Orthorhombic U2S3 Structure

ADVANCED FUNCTIONAL MATERIALS, Issue 14 2009
Andreas Zerr
Abstract Among binary compounds, there is a high potential for discovery of novel members (polymorphic phases or compounds) of the nitrides of transition metals group due to a pronounced dependence of the oxidation state of the metals (M) on pressure. The power of high pressure,high temperature (HP-HT) route for synthesis of binary nitrides has already been demonstrated by the discovery of cubic nitrides of the group 4 and 14 elements, of crystalline polymorphs of P3N5, and by reports on formation of four noble metal nitrides. It is anticipated that such HP products exhibit, in addition to enhanced elastic and mechanical behavior, other functional properties making them interesting for industrial applications. Here, HP,HT synthesis research is extended to nitrides of group 5 elements, resulting in the discovery of a novel hard tantalum nitride, exhibiting U2S3 structure: , -Ta2N3 (Pbnm, a,=,8.1911(17),, b,=,8.1830(17),, c,=,2.9823(3),). The stoichiometry is supported by two independent means, verifying that , -Ta2N3 is the first thermodynamically stable transition metal nitride with a N:M ratio exceeding 4:3. Due to its high hardness and peculiar texture (needle-like and granular crystallites), , -Ta2N3 may find practical applications as a hard fracture resistant material. [source]


Microwave-Assisted Combustion Synthesis of Tantalum Nitride in a Fluidized Bed

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 2 2003
Akhil Jain
Combustion synthesis experiments in a fluidized bed have been conducted using nitrogen as the fluidizing gas for the formation of transition-metal nitrides that are potential replacements for traditional hydrodenitrogenation and hydrodesulfurization catalysts. The microwave-assisted ignition of reaction has been investigated for its potential to produce nitride overlayers on two different sizes of tantalum particle substrates. Various characterization techniques,X-ray diffractometry, energy dispersive spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy,have been used to study the presence of nitride overlayers. The results indicate that microwave assistance can permit controlled formation of tantalum nitride (Ta2N) overlayers. [source]


Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuits

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 4 2008
S. Rudra
Abstract The objective of this work is to study the optical and electrical properties of tantalum nitride and tantalum barrier thin films used against copper diffusion in Si in integrated circuits using spectroscopic ellipsometry in the VUV and UV,visible range. Single layers of tantalum nitride and bilayer films of Ta/TaN were produced by reactive magnetron sputtering on Si(100) substrates covered with a native oxide layer. Ellipsometric measurements were performed in the energy range from 0.73,8.7 eV and the dielectric functions were simulated using Drude,Lorentz model and effective medium approximation (EMA) in order to obtain information regarding film thickness, film composition, free carrier plasma energy, mean relaxation time and electrical resistivity. The film thickness clearly affects the electrical resistivity and the electron mean free path. It was observed that for films of Ta on TaN even after maintaining the deposition condition suitable for the ,-phase of Ta, it turned out to be a mixture of ,- and ,-phases with higher contribution of the ,-phase. It is shown that even a very small intermixture of two different phases of Ta can be determined accurately using ellipsometry. ( 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]