Substrate Temperature (substrate + temperature)

Distribution by Scientific Domains

Kinds of Substrate Temperature

  • different substrate temperature
  • increasing substrate temperature
  • low substrate temperature


  • Selected Abstracts


    Effect of Substrate Temperature and RF Biasing on the Optical Properties of Titania-Like Thin Films Obtained by Plasma Enhanced Chemical Vapor Deposition

    PLASMA PROCESSES AND POLYMERS, Issue S1 2009
    Axel Sonnenfeld
    Abstract A low pressure radio frequency (RF) discharge (200,W) was operated in argon/oxygen with small admixtures of titanium(IV)isopropoxide (TTIP). By regulating the cooling temperature of the RF driven electrode, the influence of the substrate temperature and of the ion bombardment caused by the negative DC self-bias of the RF electrode was investigated comparatively. Thin titania-like films were obtained and characterized with respect to their cut-off wavelength and their spectral absorption coefficient in the UV range. Accordingly, the cut-off wavelength was found to be higher for films obtained on the DC-self-biased electrode. Here, its value appears independent of the substrate temperature and attained successively its maximum at 340,nm with deposition time. Furthermore, the absorption coefficients of films deposited on the DC self-biased electrode are well superior to those obtained on the grounded substrate holder. [source]


    Effect of Substrate Temperature on the Plasma Polymerization of Poly(methyl methacrylate),

    CHEMICAL VAPOR DEPOSITION, Issue 1 2006
    B. Casserly
    Abstract Low-power, plasma-enhanced (PE)CVD together with polymerization of methyl methacrylate (MMA) can be used to deposit thin films of poly(methyl methacrylate) (PMMA) with,minimal loss of functional groups, as shown by Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and Raman spectrometry (RS). Retention of functional groups decreases with increased substrate temperature, corresponding to decreased deposition rates. From XPS data, the calculated percentage loss of functional groups ranges from 0.9,% to 43.4,%, changing as a function of deposition conditions. RS confirms the presence of C=C bonds in the polymer backbone as a result of scission of the ester group from MMA. The thermal properties of PECVD-produced films from MMA can be tailored by varying the substrate temperature. Onset of thermal decomposition increases with increased substrate temperature by eliminating thermally labile peroxide linkages in the polymer backbone, and by crosslinking that occurs at radical sites generated via scission of functional group bonds. The post-anneal thicknesses of the remaining polymer is of the order of 4,nm or less, indicating that low-power PECVD of PMMA is a viable candidate to act as a sacrificial material for air-gap fabrication. [source]


    Epitaxial Sn1-xPbxS nanorods on iso-compositional thin films

    CRYSTAL RESEARCH AND TECHNOLOGY, Issue 6 2010
    K. Bente
    Abstract Based on SnS (Herzenbergite) , SnPbS2 (Teallite) mixed crystals with orthorhombic layer structures, thin films and lawns of Sn1-xPbxS nanorods were produced using hot wall vacuum deposition method (HWVD). The lawn was formed onto the surface of an underlying thin Sn1-xPbxS film which is build by differently oriented blocks. The density of rods arranged like a lawn depends on the metal ratio and substrate temperature. X-ray and TEM analysis of the epitaxial material showed preferential (001) orientation perpendicular to the surface of the glass substrate. The roughness of the films measured by atomic force microscopy was in the range of Rq = 49.5,86.3 nm depending on lead concentration The rods were about 500 nm high and 300 nm in diameter. As revealed by TEM-EDX experiments the droplet at the tip of rods consists of tin. Therefore it is assumed the rods grew via a self-consuming vapor,liquid,solid (VLS) mechanism. ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Influence of substrate temperature on the properties of electron beam evaporated ZnSe films

    CRYSTAL RESEARCH AND TECHNOLOGY, Issue 4 2010
    M. G. Syed Basheer Ahamed
    Abstract ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co-efficient (104 cm -1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39 , 2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm -1, 246.7 cm -1and 204.5 cm -1which are attributable to 2TA LO phonon and TO phonon respectively. ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Nanocrystalline transparent SnO2 -ZnO films fabricated at lower substrate temperature using a low-cost and simplified spray technique

    CRYSTAL RESEARCH AND TECHNOLOGY, Issue 3 2010
    K. Ravichandran
    Abstract Nanocrystalline and transparent conducting SnO2 - ZnO films were fabricated by employing an inexpensive, simplified spray technique using a perfume atomizer at relatively low substrate temperature (3605 C) compared with conventional spray method. The structural studies reveal that the SnO2 -ZnO films are polycrystalline in nature with preferential orientation along the (101) plane. The dislocation density is very low (1.481015lines/m2), indicating the good crystallinity of the films. The crystallite size of the films was found to be in the range of 26,34 nm. The optical transmittance in the visible range and the optical band gap are 85% and 3.6 eV respectively. The sheet resistance increases from 8.74 k,/, to 32.4 k,/, as the zinc concentration increases from 0 to 40 at.%. The films were found to have desirable figure of merit (1.6310,2 (,/,),1), low temperature coefficient of resistance (,1.191/K) and good thermal stability. This simplified spray technique may be considered as a promising alternative to conventional spray for the massive production of economic SnO2 - ZnO films for solar cells, sensors and opto-electronic applications. ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

    CRYSTAL RESEARCH AND TECHNOLOGY, Issue 1 2010
    N. Kumar
    Abstract Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350-550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (Ts) on the structural, morphological, optical, and electrical properties of the films were investigated using x-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall-effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80-330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all Ts. With the increase of Ts the intensity of the diffraction peaks increased and well-resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38-1.18 eV. Hall-effect measurements revealed the resistivity of films in the range 112-20 , cm for films deposited at different Ts. The activation energy for films deposited at different Ts was in the range of 0.14 eV-0.28 eV as derived from the analysis of the data of low-temperature resistivity measurements. ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Growth and electrical properties of flash evaporated AgGaTe2 thin films

    CRYSTAL RESEARCH AND TECHNOLOGY, Issue 2 2006
    B. H. Patel
    Abstract Thin films have been prepared by flash evaporation technique of a stoichiometric bulk of AgGaTe2 compound in vacuum and analysed using X-ray diffraction, transmission electron microscopy, selected area diffraction and energy dispersive analysis of X-rays. The effect of substrate temperature on the structural properties , grain size, film orientation, composition, and stoichiometry of the films have been studied. It was found that the polycrystalline, stoichiometric films of AgGaTe2 can be grown in the substrate temperature range of 473K < Ts < 573K. The influence of substrate temperature (Ts) on the electrical characteristics- Resistivity, Hall Mobility, Carrier concentration of AgGaTe2 thin films were studied. The electrical resistivity was found to decrease with increase in substrate temperature up to 573K and then increases. The variation of activation energy of AgGaTe2 thin films were also investigated. The implications are discussed. ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method

    CRYSTAL RESEARCH AND TECHNOLOGY, Issue 12 2005
    B. Kotlyarchuk
    Abstract An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO thin films is also analysed. ( 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

    CRYSTAL RESEARCH AND TECHNOLOGY, Issue 7 2005
    C. Viswanathan
    Abstract Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (Tsb = 30, 400C). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400C). The polycrystalline films were found to have a hexagonal lattice. Compositions of these films have been characterized by EDAX and the surface analysis by scanning electron microscopy. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range (300 , 1100 nm), were explained in terms of substrate temperatures. Films formed at room temperature showed an optical band gap (Egopt) 1.56 eV; where as the films formed at 400C were found to have a Egopt of 1.92 eV. The increase in the value of Egopt with Tsb treatment is interpreted in terms of the density of states model as proposed by Mott and Davis. The analysis of current -Voltage characteristics, based on space charge limited currents (SCLC) measurements, confirms the exponential decrease of density of states from the conduction band edge towards the Fermi level for both the amorphous and polycrystalline films. ( 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Orientation Control of Linear-Shaped Molecules in Vacuum-Deposited Organic Amorphous Films and Its Effect on Carrier Mobilities

    ADVANCED FUNCTIONAL MATERIALS, Issue 3 2010
    Daisuke Yokoyama
    Abstract The molecular orientation of linear-shaped molecules in organic amorphous films is demonstrated to be controllable by the substrate temperature. It is also shown that the molecular orientation affects the charge-transport characteristics of the films. Although linear-shaped 4,4,-bis[(N -carbazole)styryl]biphenyl molecules deposited on substrates at room temperature are horizontally oriented in amorphous films, their orientation when deposited on heated substrates with smooth surfaces becomes more random as the substrate temperature increases, even at temperatures under the glass transition temperature. Another factor dominating the orientation of the molecules deposited on heated substrates is the surface roughness of the substrate. Lower carrier mobilities are observed in films composed of randomly oriented molecules, demonstrating the significant effect of a horizontal molecular orientation on the charge-transport characteristics of organic amorphous films. [source]


    Microtexture and Grain Boundaries in Freestanding CVD Diamond Films: Growth and Twinning Mechanisms

    ADVANCED FUNCTIONAL MATERIALS, Issue 24 2009
    Tao Liu
    Abstract Three groups of free-standing chemical vapor deposition (CVD) diamond films formed with variations in substrate temperature, methane concentration, and film thickness are analyzed using high-resolution electron back-scattering diffraction. Primarily {001}, {110}, and {111} fiber textures are observed. In addition, corresponding primary and higher order twinning components are found. As interfaces, high angle, low angle, primary twin, and secondary twin boundaries are observed. A growth and a twinning model are proposed based on the sp3 hybridization of the bond in the CH4 molecule that is used as the deposition medium. [source]


    Influence of Dielectric Surface Chemistry on the Microstructure and Carrier Mobility of an n-Type Organic Semiconductor

    ADVANCED FUNCTIONAL MATERIALS, Issue 15 2009
    Parul Dhagat
    Abstract This paper examines the microstructure evolution of 3,4,9,10-perylene-tetracarboxylic bis-benzimidazole (PTCBI) thin films resulting from conditions imposed during film deposition. Modification of the silicon dioxide interface with a hydrophobic monolayer (octadecyltrichlorosilane (OTS-18)) alters the PTCBI growth habit by changing the unit cell contact plane. PTCBI films deposited on oxide surface have an orientation of (011), while films atop OTS-treated oxide surface have a preferred orientation of (001). The quality of the self assembled monolayer does not appear to influence the PTCBI growth preference significantly yet it enhances the carrier mobility, suggesting that charge traps are adequately passivated due to uniform monolayer coverage. High-quality monolayers result in n-type carrier mobility values of 0.05,cm2V,1s,1 Increasing the substrate temperature during PTCBI film deposition correlates with an increase in mobility that is most significant for films deposited on OTS-treated surface. [source]


    Self-Assembled Pb Nanostructures on Si(111) Surfaces: From Nanowires to Nanorings

    ADVANCED MATERIALS, Issue 45 2009
    Rui Wu
    Abstract A template-directed growth method for metals is described in which ordered arrays of super-long single-crystalline metal nanowires with atomic-level-controlled width, thickness (height), and surface location are prepared by molecular beam epitaxy. Their subsequent examination by in situ scanning tunneling microscopy is also outlined. A phase-separated stripe pattern composed of alternately a Ge-rich incommensurate phase and a ,3,,,3 phase is first obtained by Ge deposition on Si(111) substrates. Further deposition of Pb on this patterned surface leads to a well-ordered array of super-long Pb nanowires. Using the same mechanism, superconducting Pb nanorings can also be fabricated. In this review of our recent work, these Pb single-crystalline nanowires and nanorings are shown to serve as an ideal platform for the study of superconductivity in reduced dimensionalities. Furthermore, because the widths and spatial distributions of two phases can be precisely controlled by the Ge coverage and substrate temperature, and because a metal will always selectively nucleate on one of two phases, this template-directed growth method can be applied to a wide range of metals. [source]


    High-Performance Field-Effect Transistor Based on Dibenzo[d,d,]thieno[3,2- b;4,5- b,]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential,

    ADVANCED MATERIALS, Issue 19 2007
    H. Gao
    Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 106 at a substrate temperature of ca.,36,C, as reported here, suggest that DBTDT will be extremely valuable for applications in plastic organic electronics. [source]


    Effect of Molecular Orientation of Epitaxially Grown Platinum(II) Octaethyl Porphyrin Films on the Performance of Field-Effect Transistors,

    ADVANCED MATERIALS, Issue 9 2003
    Y.-Y. Noh
    The molecular alignment of platinum(II) octaethyl porphyrin (PtOEP) crystals evaporated on KBr (see atomic force microscopy image, Figure) can be readily changed from perpendicular to parallel by changing the substrate temperature. The field-effect mobility of transisitors prepared using epitaxially grown PtOEP films aligned perpendicularly to a substrate is 100 times higher than that of those of parallel alignment. [source]


    Silicon carbonitride thin-film coatings fabricated by remote hydrogen,nitrogen microwave plasma chemical vapor deposition from a single-source precursor: Growth process, structure, and properties of the coatings,

    JOURNAL OF APPLIED POLYMER SCIENCE, Issue 1 2007
    A. M. Wrobel
    Abstract Silicon carbonitride (Si:C:N) films were produced by remote hydrogen,nitrogen microwave plasma chemical vapor deposition (RP-CVD) from a 1,1,3,3-tetramethyldisilazane precursor with a nitrogen content {[N2]/([H2] + [N2])} of 0.88 in the plasma-generating mixture and a substrate temperature in the range of 30,400C. The effects of the substrate temperature on the rate and yield of the RP-CVD process and chemical structure (examined by Fourier transform infrared spectroscopy) of the resulting films were investigated. The Si:C:N film properties were characterized in terms of the density, hardness, elastic modulus, and friction coefficient. With the IR structural data, reasonable structure,property relationships were determined. 2007 Wiley Periodicals, Inc. J Appl Polym Sci 105: 122,129, 2007 [source]


    Ionized physical vapor deposited Al2O3 films: Does subplantation favor formation of ,-Al2O3?

    PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 7 2010
    K. Sarakinos
    Abstract The broad energy distributions of the condensing particles typically encountered in ion assisted vapor deposition techniques are often a drawback when attempting to understand the effect of the energetic bombardment on the film properties. In the current study, a monoenergetic Al+ beam generated by a filtered cathodic arc discharge is employed for the deposition of alumina (Al2O3) films at well defined Al+ ion energies between 4 eV and 200 eV at a substrate temperature of 720 C. Structural analysis shows that Al+ energies of 40 eV or larger favor the formation of the thermodynamically stable ,-Al2O3 phase at the expense of other metastable Al2O3 polymorphs. The well defined ion energies are used as input for Monte-Carlo based simulations of the ion,surface interactions. The results of these simulations reveal that the increase of the Al+ ion energy leads to an increase in the fraction of ions subplanted into the growing film. These findings underline the previously not considered role of subsurface processes on the phase formation of ionized physical vapor deposited Al2O3 films. ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Structural and optical characterization of pulsed laser-ablated potassium lithium niobate thin films

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 12 2009
    V. Jayasree
    Abstract Thin films of potassium lithium niobate (K3Li2Nb5O15: KLN) have been prepared on glass substrate, as a function of substrate temperature, using a pulsed laser-deposition (PLD) technique for the first time. Grazing-incidence X-ray diffraction (GIXRD) analysis suggests that KLN films can be grown successfully at a substrate temperature as low as 300,K. The anomalous behavior of the decline of crystalline structure with increase in substrate temperature is explained. The atomic force microscopic (AFM) and scanning electron microscopic (SEM) images show an agglomerated growth mode for the films deposited at a substrate temperature of 300,K and a decrease in grain size with increase in substrate temperature. The films deposited at higher substrate temperatures show ring-like structures. The AFM analysis shows that the rms surface roughness of the film decrease with increase in substrate temperature. The UV,Vis transmission spectra suggest that the nature of the transition in the films is directly allowed. A blue shift in optical bandgap is observed for the films compared to bulk material. The changes in the optical bandgap with substrate temperature are also discussed. [source]


    Dependence on substrate temperature of the conformation and structure of a poly[3-(4-octyloxyphenyl)thiophene] (POOPT) thin film obtained by matrix assisted pulsed laser evaporation (MAPLE)

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 9 2009
    Valeria Califano
    Abstract In this paper, the substrate temperature influence on the structural and main opto-electronic properties of poly[3-(4-octyloxyphenyl)thiophene] (POOPT) films, deposited by matrix assisted pulsed laser evaporation (MAPLE), was analyzed. Fourier transform infrared analysis of films was performed to verify that laser irradiation has not induced polymer modifications or decomposition, confirming the reliability and high control of the MAPLE deposition technique. UV,Visible spectroscopy allowed gaining insights about films conformation and packing, while conductivity values have been measured by basic current,voltage measurements. In agreement with the experimental observations reported for other growth techniques, our results highlight the substrate temperature effect in promoting the film structural organization and improving their charge transport capability. At substrate temperature of 453,K, films deposited by MAPLE show a higher conjugation length in comparison with spin-coated films. The substrate temperature increase also favors side-chains commutation to different steric configurations. [source]


    Effect of substrate temperature on structural, optical and electrical properties of spray pyrolytically grown nanocrystalline SnO2 thin films

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 10 2007
    Saji Chacko
    Abstract SnO2 nanocrystalline thin films were prepared by a spray pyrolysis method on glass substrates at 375, 400, 425, 450 and 500 C. Structural, optical and electrical properties of these films were studied by X-ray diffraction, UV,visible and four-probe methods. The change in electrical conductivity, band gap and optical transmittance was found to be a function of the change in lattice parameters ,a and ,c The samples prepared at 425 C are found to have good figure of merit and maximum transmittance (96% at 550 nm). ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Effects of growth temperature on exciton lifetime and structural properties of ZnO films on sapphire substrate

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 15 2006
    S. Cho
    Abstract We report on optimization of growth conditions by studying the structural and optical properties of ZnO films grown on sapphire substrate by pulsed laser deposition at different growth temperatures. The crystallographic structure and surface morphology were studied by X-ray diffraction and atomic force microscopy, respectively. The flattest surface was observed in the sample grown at substrate temperature of 500 C. The optical characterization was performed by steady state and time resolved photoluminescence spectroscopy. Photoluminescence of the samples was studied at low CW excitation and at high-power-density pulsed excitation in picosecond domain. Stimulated emission was observed at pulsed excitation. Carrier lifetimes were found to significantly depend on the growth temperature reaching the peak value also in the samples grown at approximately 500 C. ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Low temperature growth of transparent conducting ZnO films by plasma assisted deposition

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006
    A. Nishii
    Abstract Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 , 300 C using metallic Zn, metallic Ga and plasma-excited oxygen as source materials. Deposited films were characterized by X-ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm-thick Ga-doped ZnO films deposited at 290 C showed low resistivity (,2 10,4 , cm) and high transmittance in the visible region (,85%). ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Growth and characterization of Sn doped ZnO thin films by pulsed laser deposition

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2006
    E. Lpez-Ponce
    Abstract Sn:ZnO thin films with different Sn concentrations were grown by pulsed laser deposition (PLD) onto single-crystal Si(001) substrates at an oxygen pressure of 2 10,2 mbar and substrate temperature of 600 C. The targets used were high density Sn:ZnO pellets with different Sn concentrations produced by mixing ZnO and SnO2 by conventional ceramic routes. A deep structural and electrical characterization was carried out in order to determine the role of an increasing Sn nominal concentration on the ZnO film transport properties. Only films with a nominal 0.1 at% Sn show an improvement of the transport properties, lower resistivity and higher donor concentration, with respect to pure ZnO thin films. For films with larger Sn nominal concentrations segregated SnZnO phases appear that lead to larger film resistivities and no increase in donor concentration. The 0.1 at% Sn film is accordingly a good candidate to study the possible room temperature ferromagnetism when co doping with Mn. ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Growth and cathodoluminescent characteristics of blue emitting cerium-doped zinc aluminate layers synthesized by spray pyrolysis technique

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2004
    M. Garca-Hiplito
    Abstract Cerium doped ZnAl2O4 cathodoluminescent films have been deposited by ultrasonic spray pyrolysis deposition technique. X-ray diffraction measurements on these layers have shown that their crystalline structure depends on the substrate temperature. Cerium ions have been introduced into zinc aluminate films for produce violet-blue cathodoluminescence emissions. The behavior of cathodoluminescence emission intensity has been studied, as a function of the variations on doping concentrations, in the start spraying solution, substrate temperatures and the electron accelerating voltage. Concentration quenching of the cathodoluminescence occurs at about 0.8 percent of activator (Ce) concentrations inside the synthesized films. The surface morphology characteristics of these films, as a function of the substrate temperature, and the chemical composition, as measured by energy dispersive X-ray spectroscopy, are also exhibited. ( 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Growth model on (1 + 1) dimensions with local relaxation and discrete number of orientations

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2004
    W. L. Cavalcanti
    Abstract We introduced in this work a simple model for studying the texture formation during the electrodeposition process. Monte Carlo simulations were used to describe the formation of the deposits, and scaling concepts were also employed to characterize their growth and roughness properties. Particles are randomly deposited on a substrate, and their main axis can be aligned in a discrete set of possible directions. The final orientation of the deposited particle is determined by the interaction energy with its first neighboring particles and substrate temperature. Particle interactions are chosen according to the q -state ferromagnetic Potts model hamiltonian. Simulations were performed on (1 + 1) dimensions, for different values of temperature and substrate size. We have found different behaviors at low and high temperatures. Only at zero temperature the system reaches an absorbing state with all the layers occupied by particles oriented in the same direction. At this temperature we found the dynamic, roughness and growth exponents of the model, which satisfies the well known Family,Vicsek scaling relation for the self-affine interfaces. ( 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Evidence of nanodomes in carbon nitride thin films

    PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2004
    S. Chowdhury
    Abstract This article reports the synthesis of hard and conductive carbon nitride thin films with evidence of formation of nanodomes over a range of substrate temperature from 50 C to 550 C. The size of the nanodomes increases from 40,80 nm at room temperature to 200,400 nm at high temperature (550 C). Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 19 m, cm were found for nanodomes of size 40,80 nm falling to 6 m, cm for nanodomes of size 200,400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9,22 GPa and 100,168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed. ( 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Role of polymers in CVD growth of nanocrystalline diamond films on foreign substrates

    PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 11-12 2009
    A. Kromka
    Abstract Spin coating of PVA polymer with fine grained diamond powder is used as the nucleation treatment for achieving growth of nanocrystalline diamond (NCD) thin films. The growth is realized by standard microwave plasma chemical vapor deposition (CVD). The morphology and character of deposited NCD film is strongly related to the growth temperature. The low temperature process (430C) results in a growth of well-faceted continuous films. The high temperature process (830,C) results in voids and openings in the layer. Addition of PVA as the interlayer between the substrate and the seeding polymer composite leads to more openings. The effect is the most pronounced at 830,C. This is assigned to thermal instability of PVA and oxygen chemistry present in the early beginning of the CVD growth. An optimized seeding process based on the polymer composite procedure at low substrate temperature and low PVA amount allows the diamond growth on extremely soft substrates. [source]


    Kinetically controlled engineering of quantum dot arrays

    PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003
    V. G. Dubrovskii
    Abstract A kinetic model for the formation of arrays of coherent strained islands is developed. The derived expressions provide a detailed characterization of quantum dot arrays in terms of island size and density as functions of substrate temperature, growth rate, exposition time and the amount of deposit. The obtained results give a guideline to the kinetically controlled engineering of quantum dot arrays with required structural properties. [source]


    Effect of the substrate temperature on the properties of the RF sputtered TiO2 thin films

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2010
    I. Ben Mbarek
    Abstract Titanium dioxide (TiO2) thin films were deposited by RF magnetron sputtering on glass and silicon substrates at different substrate temperatures (20, 100, 200 and 300 C). The structural and morphological characteristics of the films were investigated by X ray Diffractometry (XRD) and Atomic Force Microscopy (AFM) while the optical properties of the films were studied by optical spectroscopy. It was shown that at room temperature, TiO2 films grown on glass were amorphous following the substrate structure. At higher temperatures, XRD detected only a nanocrystalline rutile TiO2 structure. This indicated that the transition temperature toward the most stable TiO2 phase was obtained from 100 C and the crystallinity was enhanced at higher growth temperature. For TiO2 films grown on Si substrates, only a nanocrystalline anatase TiO2 structure was obtained at room temperature. At higher temperatures, we noticed the appearance of other secondary phases related to rutile, anatase and brookite structures. From AFM images, we noticed that at room temperature, the films were porous. With increasing the temperature, the structure of the films became crystallized showing a columnar structure. Film growth and structural properties were discussed in terms of the Thornton model. From optical analysis, the films were transparent with an indirect band gap and a refraction index which reached 3.09 eV and 2.7, respectively. The reflectance and transmittance spectra showed, not only that there was a little translation from UVB to UVA and near-visible range, but also a decrease of reflection with a temperature increase indicating that the films could be used as anti-reflection coatings. ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


    Growth kinetics of AlxGa1,xN layers (0 < x < 1) in plasma-assisted molecular beam epitaxy

    PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010
    A. M. Mizerov
    Abstract Comparative study of growth kinetics of the AlxGa1-xN (x = 0-1) layers of different polarity, grown by plasma assisted molecular beam epitaxy (PA MBE) under different growth conditions (substrate temperature, group III to activated nitrogen and Al to Ga flux ratios) and on different buffer layers, is presented. The 60 C higher temperature stability of N-face AlGaN layers is detected. The strong influence of elastic stress on growth kinetics of metal-polar AlxGa1-xN (x > 0.2) layers is observed and discussed. It was found that two-dimensional growth of AlGaN films of the same composition on different buffer layers at TS = 700 C can be achieved at different group III surface enrichment, the AlGaN(0001)/c-Al2O3 films exhibiting the atomically smooth surface at group III to activated nitrogen flux ratio FIII/FN *gradually increased from 1.3 to 2 with the x variation from 0.1 to 0.8. In this case the alloy composition is controlled by the variation of Al flux only ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]