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Sputtering
Kinds of Sputtering Terms modified by Sputtering Selected AbstractsNitrided Amorphous Stainless Steel Coatings Deposited by Reactive Magnetron Sputtering from an Austenitic Stainless Steel TargetADVANCED ENGINEERING MATERIALS, Issue 1-2 2009Salvatore Cusenza Abstract Stainless steel films were reactively magnetron sputtered in argon/nitrogen gas flow onto oxidized silicon wafers using austenitic AISI 316 stainless-steel targets. The deposited films of about 300,nm thickness were characterized by conversion electron Mö-i;ssbauer spectroscopy, magneto-optical Kerr-effect, X-ray diffraction, Rutherford backscattering spectrometry, and resonant nuclear reaction analysis. These complementary methods were used for a detailed examination of the nitriding effects for the sputtered stainless-steel films. The formation of an amorphous and soft ferromagnetic phase in a wide range of the processing parameters was found. Further, the influence of postvacuum-annealing was examined by perturbed angular correlation to achieve a comprehensive understanding of the nitriding process and phase formation. The amorphous phase is not very stable and crystallization can be observed at 973,K. [source] Hollow Cathode Gas Flow Sputtering of NixAly Coatings on Ti-6Al-2Sn-4Zr-6Mo: Mechanical Properties and Microstructures,ADVANCED ENGINEERING MATERIALS, Issue 1-2 2009Andreas Kohns A W-TiB2 -multilayer erosion resistant coating with a NixAly bond coat deposited by hollow cathode gas flow sputtering is under development for Ti6246 aero engine compressor blades. Blade vibrations in service can produce cracks in the coating propagating into the substrate and reducing the high-cycle fatigue strength of the component. It is assumed, that this effect can be diminished by adapting the mechanical and morphological properties of the NixAly bond coat. In this context, process parameter variations are performed and discussed. [source] Relationship between Condition of Deposition and Properties of W-Ti-N Thin Films Prepared by Reactive Magnetron Sputtering,ADVANCED ENGINEERING MATERIALS, Issue 3 2006V. Kuchuk A correlation between the film properties of nitrides, oxides etc., and their structure, is of fundamental importance , not only for thin solid films physics but also for practical applications. The structure of the films depends on deposition methods and their parameters. The relationship between properties (chemical and phase compositions, surface morphology, and electrical resistivity) and nitrogen partial pressure of reactive magnetron sputtered W-Ti-N thin films has been discussed here in detail. [source] Improved SERS Performance from Au Nanopillar Arrays by Abridging the Pillar Tip Spacing by Ag SputteringADVANCED MATERIALS, Issue 37 2010Zhulin Huang Ag-capped Au nanopillar arrays on a resin supporter (see left upper figure), with a typical adjacent pillar tip gap of 10 nm, show obviously higher surface-enhanced Raman scattering (SERS) sensitivity (right column in red) than that of the bare Au nanopillar array while using 10 nM R6G as probe molecules. The large-area Ag-capped Au nanopillar array has potential in trace detection of special chemicals. [source] TEM Analysis of Hcp-Co Films Deposited by Gas Flow SputteringIEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, Issue 4 2008Hiroshi Sakuma Member Abstract In this study, the crystal structure of Co thin films deposited by a low-energy sputtering, gas flow sputtering (GFS) and conventional RF magnetron sputtering (MS) is investigated. The emphasis is on whether fcc-like regions are present in a hcp-Co film. X-ray diffraction (XRD) shows no fcc peak for both films deposited by GFS and MS. Electron diffraction reveals that fcc structure is present in the film deposited by MS. Lattice images are observed by using transmission electron microscopy. Every other line in the lattice image of the film deposited by GFS is bright or dark, which is suggestive of the ABAB stacking of the hcp structure. In addition, stacking faults are observed. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. [source] Self-Assembly of Ordered Semiconductor Nanoholes by Ion Beam SputteringADVANCED MATERIALS, Issue 28 2009Qiangmin Wei Periodic nanohole arrays are formed on a Ge substrate by self-assembly using focused ion beam sputtering at normal incidence with an energy of 5,keV. The figure shows an SEM image of a hexagonally ordered hole domain that has hexagonally ordered quantum dots,20,nm diameter and 3,nm height,around each hole The structured Ge has high surface area and a considerably blue-shifted energy gap. [source] Structured Ti/Hydrocarbon Plasma Polymer Nanocomposites Produced By Magnetron Sputtering with Glancing Angle DepositionPLASMA PROCESSES AND POLYMERS, Issue 1 2010Andrei Choukourov Abstract Structured Ti/hydrocarbon plasma polymer nanocomposite films are deposited at a glancing angle by magnetron sputtering of titanium in an Ar/hexane mixture and by sequential magnetron sputtering of titanium and polypropylene. The surface chemistry of such films is tuned by adjusting the gas mixture composition. The structure of the substrate may convert the morphology of organic films deposited at a glancing angle from continuous to nanostructured thin films. [source] Comparative Studies on Mo,Cr,N and Al,Cr,N Coatings Obtained by PVD Dual Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Yacine Benlatreche Abstract Recently, several studies have shown that the addition of a secondary element likes Al, Si, etc. to nitride and carbide binary systems such as Ti,N and Cr,N improved their structural and mechanical properties and also their thermal stability. In this study, we realized a comparison between the effects of aluminium or molybdenum addition on the properties of the Cr,N system. The (Cr,Al)N and (Cr,Mo)N films were deposited by RF dual magnetron sputtering. To control the aluminium and molybdenum contents in (Cr,Al)N and in (Cr,Mo)N films, respectively, we modified the Cr, Al and Mo target bias. The structural, morphological and composition analyses of the deposited films were carried out using X-ray diffraction (XRD) and SEM equipped with an energy dispersive spectroscopy (EDS) microanalysis. The variation of the residual stresses with the Al and Mo contents has been studied using the Newton's rings method. The obtained Al contents in (Cr,Al)N deposited films varied between 0 and 51,at.% while the Mo contents in (Cr,Mo)N layers varied between 0 and 42,at.%. A morphological change from amorphous to columnar films has been observed with the addition of Al in the case of (Cr,Al)N coatings, while all the (Cr,Mo)N films presented a columnar structure. The residual stresses of the (Cr,Mo)N coatings are higher than the (Cr,Al)N ones but they exhibited a similar behaviour for both coatings. [source] Ion Energy Distributions in Magnetron Sputtering of Zinc Aluminium OxidePLASMA PROCESSES AND POLYMERS, Issue S1 2009Thomas Welzel Abstract Ion energy distributions have been measured with an energy-dispersive mass spectrometer during magnetron sputtering of Al doped ZnO. A d.c. and a pulsed d.c. discharge have been investigated. Different positive ions from the target material have been observed with low energies in d.c. and a second energy peak of about 30 eV in pulsed d.c. with only weak additional energy due to the sputter process. Negative ions are mainly O, with energies corresponding to the target voltage of several 100 eV. They originate from the target and barely from the (O2) gas and hit the substrate opposite the race track. In pulsed d.c., due to the varying target voltage, energies of up to 500 eV have been observed. With increasing pressure, negative ions at the substrate are reduced exponentially in their density but not in their energy. [source] Structural and Mechanical Study of Nanocomposite Ti,Zr,C,H Coatings Prepared by Reactive Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Diego Martínez-Martínez Abstract Nanocomposite structures formed by small crystallites embedded in a lubricant matrix present moderate,high hardness, good toughness, and low values of friction coefficient and wear rate, and they are a promising alternative for protective tasks. In this study, we have prepared Ti,Zr,C,H films as potential candidates as protective layers for biocompatible applications. The constituting elements were selected due to their proven good biocompatibility at the macroscale. The films were prepared by reactive dc magnetron sputtering, and further characterized by X-ray photoelectron spectroscopy and X-ray diffraction. Mechanical and tribological properties were also evaluated. [source] Optical Emission Spectroscopy Analysis of Ar/N2 Plasma in Reactive Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Angélique Bousquet Abstract The ternary silicon carbide-nitride SiCxNy presents very promising properties: hardness, low chemical reactivity, and resistance to oxidation. This material can be deposited by various processes, but reactive magnetron sputtering is one of the most versatile. In this paper, we investigated by optical emission spectroscopy an argon-nitrogen plasma used with a silicon carbide target to deposit SiCxNy films. First, we observed the physical aspect of the discharge is modified not only with the injected atmosphere but also with target surface state, which highly influences the N2 dissociation rate. Then, we followed two species coming from target sputtering: CN and Si. This study confirms the target nitriding up to a certain N2 fraction. Finally, the OES information was related to the deposited film composition. [source] Magnetic-Field Induced Strains in Ferromagnetic Shape Memory Alloy Ni55Mn23Ga22 Deposited by RF-Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2009Florent Bernard Abstract 1.5,µm,Ni55Mn23Ga22 ferromagnetic thin films were deposited onto silicon substrates and silicon single beam cantilever using radio-frequency magnetron sputtering. As-deposited sample and heat-treated thin films were studied on their silicon substrates and peeled off to determine the influence of the stress. Post-heat treatment process allows at the films to achieve the shape memory effect (SME). Vibrating sample magnetometer (VSM) and deflection measurement of the sample annealed at 873,K during 36,ks exhibit ferromagnetic martensitic structure with a typical SME response to the magnetic field induced strains which match the values of the bulk material. [source] Deposition of TiN,WS2 Nanocomposite Coatings by a Hybrid Process: Reactive Sputtering and Clusters GunPLASMA PROCESSES AND POLYMERS, Issue S1 2009D. Bharathi Mohan Abstract A dc magnetron reactive sputtering equipment connected with a homemade clusters gun was used to deposit a series of TiN,WS2 nanocomposite coatings with different magnetron power values and different argon pressures in the clusters gun. The original idea was to achieve from the TiN matrix, originated from the normal running of the magnetron system, the high wear resistance property, whereas the pre-formed IF,WS2 nanospheres introduced by the clusters gun would provide the low friction coefficient. A small peak detected at low diffraction angles by X-ray diffraction in two of the produced samples gave the first evidence of the WS2 nanospheres incorporation in the TiN matrix. Then, scanning electron microscopy was used for observing very small grain features which were identified as the WS2 nanospheres by energy dispersive analysis of X-rays, demonstrating the feasibility of this hybrid technique for the deposition of nanocomposite coatings. [source] A Study of Ta Content Effect on Electro-Chemical Properties of Ir-Ta-O Coatings Deposited by Unbalanced Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2007Sung Dae Kim Abstract In this study, Ir-Ta-O coating with various Ta contents in the range from 0 to 21.1 at.-% were synthesized by unbalanced magnetron sputtering (UBMS) method. The chemical concentration, crystalline structure, binding state, and morphology of coatings were characterized by electron probe microanalyzer (EPMA), X-ray photoelectron (XPS), X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM). In addition, the possibilities of Ir-Ta-O coatings synthesized by UMBS on a real dimensionally stable anode (DSA) electrode were investigated by electro-chemical application test. Ta existed mainly as a densely packed tantalum oxide compound in the Ir-Ta-O coatings and Ta oxidation states were changed from low oxidation state into high oxidation state in accordance with increase in Ta contents. The feasibility of making a DSA electrode prepared by physical vapor deposition (PVD) technique was demonstrated through the present work. [source] A New Approach to the Deposition of Elemental Boron and Boron-Based Coatings by Pulsed Magnetron Sputtering of Loosely Packed Boron Powder TargetsPLASMA PROCESSES AND POLYMERS, Issue S1 2007Martynas Audronis Abstract Large numbers of potential application areas for elemental boron and boron-based thin film materials make this subject area a focus of significant scientific and industrial interest. Applications include thermoelectric energy conversion devices, biomedical implants, metalworking tools and automotive components. Boron is however also recognised widely to be a difficult-to-deposit material. Therefore, a new technique to deposit boron (and other boron-based materials) by pulsed magnetron sputtering of loosely packed powder targets has been proposed. Among the benefits of this approach are: improved stability of the deposition process, increased speed and flexibility of target preparation, enhanced time- and cost-effectiveness and the ability to control readily the target and hence the chemical composition of the coating. [source] On Some Characteristics of Ti Oxynitrides Obtained by Pulsed Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2007Mariana Braic Abstract TiOxNy coatings were investigated as possible candidates for ion diffusion barrier layers. The elemental and phase composition, texture, hardness, adhesion, and corrosion resistance of the coatings were analyzed. The ion release in Ringer solution for uncoated and coated samples were also determined. The film properties were found to significantly depend on the reactive gas composition (O2/N2 ratio). The coatings proved to enhance the corrosion protection and to reduce the ion release of the uncoated specimens. [source] Development of Diamond Machinable Films by Reactive Magnetron SputteringPLASMA PROCESSES AND POLYMERS, Issue S1 2007Christian Schulz Abstract Thin Ni-doped titanium nitride (Ti-Ni-N) films were deposited on X42Cr13 steel samples by reactive magnetron sputtering. By varying the nitrogen gas flow and target composition, films with different nickel and nitrogen contents were grown with a plastic universal hardness between 7.2 and 17.2 GPa. SEM analysis revealed amorphous, fine crystalline and columnar structure depending on the chemical composition. Furthermore, a contact test was carried out to investigate the reactivity between the film surface and single crystalline diamond. Analysis of the films and the diamond by SEM and EDX showed especially that films with an average nitrogen and nickel content did not react with diamond. [source] Flux of Positive Ions and Film Growth in Reactive Sputtering of Al-Doped ZnO Thin FilmsPLASMA PROCESSES AND POLYMERS, Issue S1 2007Florian Ruske Abstract The reactive magnetron sputtering deposition of Al-doped zinc oxide thin films using a dual magnetron has been studied for a flux of positive ions and the total thermal load onto the substrate. The spatial distribution of both quantities has been studied using a thermal probe and a retarding field analyzer mounted onto a moveable carrier system. The positive ions were found to mostly originate from the plasma sheath at the substrate, with the spatial distribution determined by the plasma density distribution in the coating chamber. The total energy flux to the substrate mainly originated from the plasma, with positive ions only contributing a small part of the total plasma irradiation. In the tested conditions and with the coater examined, the quality of the deposited films mainly depends on oxygen distribution on the substrate and is not a direct consequence of the total energy flux to the substrate. [source] Study of the Cathode Potential in a Sputtering Discharge by Pulsing the Reactive Gas: Case of a W Target in an Ar-O2 AtmospherePLASMA PROCESSES AND POLYMERS, Issue 1 2007Nuno M.G. Parreira Abstract The process we used was d.c. magnetron sputtering, and we studied both the conventional process, using a constant flow of oxygen, and the process in which we pulsed the reactive gas. Square regulation signal with different pulsing periods (T) and oxygen injection time (ton) was used in the reactive gas pulsing (RGP), while the partial argon pressure was kept constant for all depositions. The oxygen flow rate during the injection time was sufficient to switch the process to compound sputtering mode, while the oxygen flow was stopped in the rest of period to allow cleaning of target. Sputtering experiments have shown that the instability phenomena, typical of the reactive sputtering process and known as the "hysteresis effect", are relatively weak due to the small reactivity of tungsten. The influence of the pulsing period and of the oxygen injection time on the deposition parameters is discussed in relation to the poisoning effect. It has been shown that d.c. magnetron sputtering with the oxygen pulsing is a suitable method to prepare tungsten oxide films. This process is very stable, leads to multilayered W-O coatings, and the deposition rates are slightly lower than those of obtained during the conventional process. [source] Cluster ion beam profiling of organics by secondary ion mass spectrometry , does sodium affect the molecular ion intensity at interfaces?RAPID COMMUNICATIONS IN MASS SPECTROMETRY, Issue 24 2008Felicia M. Green The use of cluster ion beam sputtering for depth profiling organic materials is of growing technological importance and is a very active area of research. At the 44th IUVSTA Workshop on "Sputtering and Ion Emission by Cluster Ion Beams", recent results were presented of a cluster ion beam depth profile of a thin organic molecular layer on a silicon wafer substrate. Those data showed that the intensity of molecular secondary ions is observed to increase at the interface and this was explained in terms of the higher stopping power in the substrate and a consequently higher sputtering yield and even higher secondary ion molecular sputtering yield. An alternative hypothesis was postulated in the workshop discussion which may be paraphrased as: "under primary ion bombardment of an organic layer, mobile ions such as sodium may migrate to the interface with the inorganic substrate and this enhancement of the sodium concentration increases the ionisation probability, so increasing the molecular ion yield observed at the interface". It is important to understand if measurement artefacts occur at interfaces for quantification as these are of great technological relevance , for example, the concentration of drug in a drug delivery system. Here, we evaluate the above hypothesis using a sample that exhibits regions of high and low sodium concentration at both the organic surface and the interface with the silicon wafer substrate. There is no evidence to support the hypothesis that the probability of molecular secondary ion ionisation is related to the sodium concentration at these levels. © Crown copyright 2008. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd. [source] Elimination of Biological Contaminations from Surfaces by Plasma Discharges: Chemical SputteringCHEMPHYSCHEM, Issue 7 2010Hubert Rauscher Dr. Abstract Plasma treatment of surfaces as a sterilisation or decontamination method is a promising approach to overcome limitations of conventional techniques. The precise characterisation of the employed plasma discharges, the application of sensitive surface diagnostic methods and targeted experiments to separate the effects of different agents, have led to rapid progress in the understanding of different relevant elementary processes. This contribution provides an overview of the most relevant and recent results, which reveal the importance of chemical sputtering as one of the most important processes for the elimination of biological residuals. Selected studies on the interaction of plasmas with bacteria, proteins and polypeptides are highlighted, and investigations employing beams of atoms and ions confirming the prominent role of chemical sputtering are presented. With this knowledge, it is possible to optimize the plasma treatment for decontamination/sterilisation purposes in terms of discharge composition, density of active species and UV radiation intensity. [source] Simulation Study of Radiative Cooling in the Divertor on JT-60 Super Advanced (JT-60SA)CONTRIBUTIONS TO PLASMA PHYSICS, Issue 1-3 2008Y. Suzuki Abstract A simulation study of the divertor for JT-60SA is discussed in both double-null (DN) and single-null (SN) configurations. In the DN case, the transition of peak heat load on the targets and divertor plasma states from CDN (connected double-null) to DDN (disconnected double-null) are shown in the simulation. The radiative cooling power in the divertor plasma is discussed in this study. The carbon impurity generated by the sputtering on the divertor target is included in the simulation. In the gas puffing cases of fueling gas (D2) and impurity gas (Ne), the reduction of heat load is confirmed consistently with increasing the radiative cooling loss power in the diverter plasma. The loss power and the distribution of radiative cooling in the divertor plasma are studied in this paper. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Characterization of reactive DC magnetron sputtered TiAlN thin filmsCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2008B. Subramanian Abstract Thin films of about 1,m Titanium Aluminum Nitride (TiAlN) were deposited onto mild steel substrates by reactive direct current (DC) magnetron sputtering using a target consisting of equal segments of titanium and aluminum. X-ray diffraction (XRD) analysis showed that the TiAlN phase had preferred orientations along 111 and 200 with the face-centered cubic structure. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) analyses indicated that the films were uniform and compact. Photoluminescence (PL) spectra reveal that TiAlN thin films are of good optical quality. Laser Raman studies revealed the presence of characteristic peaks of TiAlN at 312.5, 675, and 1187.5 cm,1. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effect of Platinum and Ruthenium Incorporation on Voltammetric Behavior of Nitrogen Doped Diamond-Like Carbon Thin FilmsELECTROANALYSIS, Issue 23 2009W. Khun Abstract Nitrogen doped diamond-like carbon thin films with or without platinum and ruthenium incorporation (N-DLC or PtRuN-DLC) were deposited on highly conductive p-Si substrates by DC magnetron sputtering to study the effect of Pt and Ru doping on the voltammetric performance of the N-DLC films. The potential windows of these film electrodes were measured in different electrolytic solutions, such as H2SO4, HCl and KCl. The cyclic voltammograms obtained from the N-DLC film electrodes in these solutions showed wide potential windows while the introduction of Pt and Ru into the film electrodes apparently narrowed down the potential windows due to their catalytic activities. [source] Gas Diffusion Electrodes for Use in an Amperometric Enzyme BiosensorELECTROANALYSIS, Issue 21 2008Martin Hämmerle Abstract The preparation of gas diffusion electrodes and their use in an amperometric enzyme biosensor for the direct detection of a gaseous analyte is described. The gas diffusion electrodes are prepared by covering a PTFE membrane (thickness 250,,m, pore size 2,,m, porosity 35%) with gold, platinum, or a graphite/PTFE mixture. Gold and platinum are deposited by e-beam sputtering, whereas the graphite/PTFE layer is prepared by vacuum filtration of a respective aqueous suspension. These gas diffusion electrodes are exemplarily implemented as working electrodes in an amperometric biosensor for gaseous formaldehyde containing NAD-dependent formaldehyde dehydrogenase from P. putida [EC. 1.2.1.46] as enzyme and 1,2-naphthoquinone-4-sulfonic acid as electrochemical mediator. The resulting sensors are compared with regard to background current, signal noise, linear range, sensitivity, and detection limit. In this respect, sensors with gold or graphite/PTFE covered membranes outclass ones with platinum for this particular analyte and sensor configuration. [source] Gold Nanoparticle-Based Mediatorless Biosensor Prepared on Microporous ElectrodeELECTROANALYSIS, Issue 3 2006Fenghua Zhang Abstract A mediatorless biosensor was fabricated with a double-sided microporous gold electrode by successively immobilizing a mixed self-assembled monolayer (SAM) comprising carboxylic-acid- and thiol-terminated thiolate (dl -thiorphan and 1,8-octanedithiol), glucose oxidase (GOx) and finally gold nanoparticle (Au NP) on one working side. The double-sided microporous gold electrodes were formed by plasma sputtering of gold on a porous nylon substrate, yielding a face-to-face type two-electrode electrochemical cell. While the straight chain molecule 1,8-octanedithiol forms a dense insulating monolayer, the side armed dl -thiorphan forms a low density layer for the diffusion of redox couples to the electrode surface. The mixed SAM not only provided the linking functional groups for both enzyme and Au NP but also resulted in the appropriately spaced monolayer for direct electron tansfer (ET) process from the center of the redox enzyme to the electrode surface. After covalently immobilizing GOx onto the carboxylic-acid-terminated monolayer, Au NP was easily immobilized to both enzyme and nearby thiols by simple dispensing of the colloidal gold solution. It was observed that the resulting amperometric biosensor exhibited quantitatively the same response to glucose in the presence and in the absence of dissolved oxygen, which evidence that the Au NPs immobilized on and around the GOx promote direct ET from the enzymes to the electrode, assuming the role of a common redox mediator. [source] Hollow Cathode Gas Flow Sputtering of NixAly Coatings on Ti-6Al-2Sn-4Zr-6Mo: Mechanical Properties and Microstructures,ADVANCED ENGINEERING MATERIALS, Issue 1-2 2009Andreas Kohns A W-TiB2 -multilayer erosion resistant coating with a NixAly bond coat deposited by hollow cathode gas flow sputtering is under development for Ti6246 aero engine compressor blades. Blade vibrations in service can produce cracks in the coating propagating into the substrate and reducing the high-cycle fatigue strength of the component. It is assumed, that this effect can be diminished by adapting the mechanical and morphological properties of the NixAly bond coat. In this context, process parameter variations are performed and discussed. [source] Low-Temperature Superionic Conductivity in Strained Yttria-Stabilized ZirconiaADVANCED FUNCTIONAL MATERIALS, Issue 13 2010Michael Sillassen Abstract Very high lateral ionic conductivities in epitaxial cubic yttria-stabilized zirconia (YSZ) synthesized on single-crystal SrTiO3 and MgO substrates by reactive direct current magnetron sputtering are reported. Superionic conductivities (i.e., ionic conductivities of the order ,1 ,,1cm,1) are observed at 500,°C for 58-nm-thick films on MgO. The results indicate a superposition of two parallel contributions , one due to bulk conductivity and one attributable to conduction along the film,substrate interface. Interfacial effects dominate the conductivity at low temperatures (<350,°C), showing more than three orders of magnitude enhancement compared to bulk YSZ. At higher temperatures, a more bulk-like conductivity is observed. The films have a negligible grain-boundary network, thus ruling out grain boundaries as a pathway for ionic conduction. The observed enhancement in lateral ionic conductivity is caused by a combination of misfit dislocation density and elastic strain in the interface. These very high ionic conductivities in the temperature range 150,500,°C are of great fundamental importance but may also be technologically relevant for low-temperature applications. [source] Preparation of Oriented Aluminum Nitride Thin Films on Polyimide Films and Piezoelectric Response with High Thermal Stability and FlexibilityADVANCED FUNCTIONAL MATERIALS, Issue 3 2007M. Akiyama Abstract c -Axis oriented aluminum nitride (AlN) thin films are successfully prepared on amorphous polyimide films by radiofrequency magnetron reactive sputtering at room temperature. Structural analysis shows that the AlN films have a wurtzite structure and consist of c -axis oriented columnar grains about 100,nm wide. The full width at half maximum of the X-ray diffraction rocking curves and piezoelectric coefficient d33 of the AlN films are 8.3° and 0.56,pC,N,1, respectively. The AlN films exhibit a piezoelectric response over a wide temperature range, from ,196 to 300,°C, and can measure pressure within a wide range, from pulse waves of hundreds of pascals to 40,MPa. Moreover, the sensitivity of the AlN films increases with the number of times it was folded, suggesting that we can control the sensitivity of the AlN films by changing the geometric form. These results were achieved by a combination of preparing the oriented AlN thin films on polyimide films, and sandwiching the AlN and polymer films between top and bottom electrodes, such as Pt/AlN/polyimide/Pt. They are thin (less than 10,,m), self powered, adaptable to complex contours, and available in a variety of configurations. Although AlN is a piezoelectric ceramic, the AlN films are flexible and excellent in mechanical shock resistance. [source] TEM Analysis of Hcp-Co Films Deposited by Gas Flow SputteringIEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, Issue 4 2008Hiroshi Sakuma Member Abstract In this study, the crystal structure of Co thin films deposited by a low-energy sputtering, gas flow sputtering (GFS) and conventional RF magnetron sputtering (MS) is investigated. The emphasis is on whether fcc-like regions are present in a hcp-Co film. X-ray diffraction (XRD) shows no fcc peak for both films deposited by GFS and MS. Electron diffraction reveals that fcc structure is present in the film deposited by MS. Lattice images are observed by using transmission electron microscopy. Every other line in the lattice image of the film deposited by GFS is bright or dark, which is suggestive of the ABAB stacking of the hcp structure. In addition, stacking faults are observed. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. 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