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Solid-state Devices (solid-state + device)
Selected AbstractsA Solid-State Organic Electronic Wettability Switch,ADVANCED MATERIALS, Issue 4 2004J. Isaksson Solid-state devices based on soluble polymers on a rigid substrate, with the active surface facing the environment, have been designed and characterized. The contact angles and spreading of water droplets can be reversibly controlled by electrochemically reducing or oxidizing a polymer surface (see Figure). [source] Development of efficient and durable sources of white lightCOLORATION TECHNOLOGY, Issue 1 2010Timothy L Dawson This review presents a brief history of the development of light sources over the centuries to provide one of the human race's basic needs , light. Recent moves in Europe to encourage the adoption of compact fluorescent lamps as more energy-efficient replacements for incandescent lights, despite certain drawbacks, are described. Rapid strides are now being made in the development of solid-state ,white' lights which are already sufficiently durable and efficient to warrant adoption for both domestic and public lighting purposes. Their basic construction and comparative performance, properties and uses are fully described, together with the many ideas for improving their brightness and durability still further. Solid-state devices offer additional savings compared with those which should be achieved under the EU's targeted replacement of incandescent lights by 2012, and later one can expect such devices to compete with high-pressure sodium luminaires for street lighting. [source] Observation of Structural and Conductance Transition of Rotaxane Molecules at a Submolecular Scale,ADVANCED FUNCTIONAL MATERIALS, Issue 5 2007M. Feng Abstract Rotaxane molecules have attracted considerable interest because of their good performance in both molecular electronic devices and nanoscale data-storage media. Low-temperature scanning tunneling microscopy is used to investigate the structure and conductance of single H2 rotaxane molecules on a buffer-layered Au(111) substrate at 77,K. It is demonstrated that the conductance switching in rotaxane-based, solid-state devices is an inherent property of the rotaxane molecules. These results provide evidence that the conductance switching might arise from the movement of the cyclobis(paraquat- p -phenylene) ring along the rod section of the dumbbell-shaped backbone of the rotaxane molecule. [source] Spin-Based Optical Quantum Information ProcessingISRAEL JOURNAL OF CHEMISTRY, Issue 4 2006Ehoud Pazy We shall present a review of semiconductor spin-based implementation schemes for the realization of quantum information/computation solid-state devices. After briefly describing the fundamentals of quantum computation theory, we shall introduce and discuss potential implementation schemes based on the spin degrees of freedom in semiconductor nanostructures. More specifically, we shall describe an implementation scheme for quantum information processing in which the spin degrees of freedom of electrons confined to a quantum dot are the computational degrees of freedom, and spins are manipulated/controlled through interaction between trionic states created by interband optical transitions by ultrafast sequences of multicolor laser pulses. We will also review briefly an adiabatic method for operating the two-qubit gate that avoids the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. [source] Carrier transport in nanodevices: revisiting the Boltzmann and Wigner distribution functionsPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 7 2009Fons Brosens Abstract In principle, transport of charged carriers in nanometer sized solid-state devices can be fully characterized once the non-equilibrium distribution function describing the carrier ensemble is known. In this light, we have revisited the Boltzmann and the Wigner distribution functions and the framework in which they emerge from the classical respectively quantum mechanical Liouville equation. We have assessed the method of the characteristic curves as a potential workhorse to solve the time dependent Boltzmann equation for carriers propagating through spatially non-uniform systems, such as nanodevices. In order to validate the proposed solution strategy, we numerically solve the Boltzmann equation for a one-dimensional conductor mimicking the basic features of a biased low-dimensional transistor operating in the on-state. Finally, we propose a computational scheme capable of extending the benefits of the above mentioned solution strategy when it comes to solve the Wigner,Liouville equation. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | |||||||||||||