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Smooth Interface (smooth + interface)
Selected AbstractsNear-Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth InterfaceADVANCED MATERIALS, Issue 21 2010Kevin Critchley Atomically smooth gold nanowires with high aspect ratios are grown using the seeded growth process. This allows control of the diameter of the nanowires to a high degree of precision. Two and four-probe nanoscale transport measurements reveal that the nanowires have low resistivity. Only a small increase in resistivity is observed between diameters of 29,nm and 185,nm suggesting that surface scattering is only a small contribution. [source] Film boiling heat transfer around a vertical finite-length cylinder with a convex hemispherical bottomHEAT TRANSFER - ASIAN RESEARCH (FORMERLY HEAT TRANSFER-JAPANESE RESEARCH), Issue 3 2010Takashi Yamada Abstract The film boiling heat transfer around a vertical silver cylinder with a convex hemispherical bottom was investigated experimentally in quiescent water at atmospheric pressure. The experiments have been carried out using a quenching method. The diameter and length of the test cylinder are 32 mm and 48 mm, respectively. The test cylinder was heated to about 600 °C in an electric furnace and then cooled in saturated or subcooled water with an immersion depth of about 100 mm. The degree of liquid subcooling was varied from 0 K to 30 K. The analytical solutions for saturated and subcooled boiling are obtained by applying a two-phase boundary layer theory for vapor film with a smooth interface. The experimental data correlates within ±15% based on the proposed prediction method. Also, the lower limit of film boiling was examined in terms of wall heat flux and degree of superheating. © 2010 Wiley Periodicals, Inc. Heat Trans Asian Res; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/htj.20289 [source] Bismuth containing III,V quaternary alloy InGaAsBi grown by MBEPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2006G. Feng Abstract InGaAsBi epilayers were created on InP substrates by molecular beam epitaxy for the first time. The high crystalline quality of the InGaAsBi epilayer with smooth interface was confirmed by high resolution X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] 1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxyPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3 2006Zhichuan Niu Abstract High structural and optical quality 1.3 µm GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellösung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||