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Separate Contributions (separate + contribution)
Selected AbstractsDielectric Characteristics for Radio Frequency Waves in a Laboratory Dipole PlasmaCONTRIBUTIONS TO PLASMA PHYSICS, Issue 4 2006N. I. Grishanov Abstract Transverse and parallel dielectric permittivity elements have been derived for radio frequency waves in a laboratory dipole magnetic field plasma. Vlasov equation is resolved for both the trapped and untrapped particles as a boundary value problem to define their separate contributions to the dielectric tensor components. To estimate the wave power absorbed in the plasma volume the perturbed electric field and current density components are decomposed in a Fourier series over the poloidal angle. In this case, the dielectric characteristics can be analyzed independently of the solution of the Maxwell's equations. As usual, imaginary part of the parallel permittivity elements is necessary to estimate the electron Landau damping of radio frequency waves, whereas imaginary part of the transverse permittivity elements is important to estimate the wave dissipation by the cyclotron resonances. Computations of the imaginary part of the parallel permittivity elements are carried out in a wide range of the wave frequencies. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Structure,Property,Function Relationships in Nanoscale Oxide Sensors: A Case Study Based on Zinc Oxide,ADVANCED FUNCTIONAL MATERIALS, Issue 8 2007S. Polarz Abstract Chemical sensing on oxide sensors is a complex phenomenon involving catalytic activity as well as electronic properties. Thus, the properties of oxide sensors are highly sensitive towards structural changes. Effects like surface area, grain size, and, in addition, the occurrence of defects give separate contributions to the current. Structure,property,function relationships can be elucidated using a combination of state-of-the-art analytical techniques. It is shown, that impurity atoms in the oxide lattice influence the performance of ZnO sensors more strongly than the other factors. [source] The contribution of domestic and external factors to emerging market currency crises: an early warning systems approach,INTERNATIONAL JOURNAL OF FINANCE & ECONOMICS, Issue 3 2007Steven B. Kamin Abstract In this paper, a modified ,early warning system' (EWS) approach is developed to identify the roles of domestic and external factors in emerging market crises. Several probit models of currency crises were estimated for 26 emerging market countries. These models were used to identify the separate contributions to the probabilities of crisis of domestic and external variables. We found that, relative to domestic factors, adverse external shocks and large external imbalances contributed little to the average estimated probability of crisis in emerging market countries, but accounted for much more of the spikes in the probability of crisis estimated to occur during actual crisis years. We interpret these results to suggest that while, on average over time, domestic factors have tended to contribute to much of the underlying vulnerability of emerging market countries, adverse swings in external factors may have been important in pushing economies ,over the edge' and into currency crisis. In consequence, the costs of giving up exchange rate flexibility through adoption of strongly fixed exchange rate regimes,e.g. currency boards or dollarization,may be quite high for some countries. Published in 2007 by John Wiley & Sons, Ltd. [source] Radiative heat exchange modeling inside an ovenAICHE JOURNAL, Issue 9 2009Ashish Dhall Abstract The 3D nongray radiative heat exchange in a near-infrared commercial oven is modeled. The spectrum is divided into into four gray bands to model the narrow wavelength range in which the halogen heat source radiates, the wavelength dependence of the food surface emittance, and the absorption coefficient of the heat source cover glass. The model is used to estimate the heating of a cuboidal food sample for 1 min at different cyclic settings of a halogen radiant heat source. The model predictions agree with the experimental data, and capture the cover-glass and the food-surface temperature and heat flux histories very well. The band-wise distribution of energy absorption by the food reveals the separate contributions from the source and the oven walls. Comparison of the heating rates between the measured non-gray food-surface and the different gray food-surface emittance values establishes the necessity of the nongray treatment. © 2009 American Institute of Chemical Engineers AIChE J, 2009 [source] A Case for Bundling Public Goods ContributionsJOURNAL OF PUBLIC ECONOMIC THEORY, Issue 3 2007SUMAN GHOSH We extend the model of voluntary contributions to multiple public goods by allowing for bundling of the public goods. Specifically, we study the case where agents contribute into a common pool which is then allocated toward the financing of two pure public goods. We explore the welfare implications of allowing for such bundling vis-à-vis a separate contributions scheme. We show that for high income inequality or for identical preferences among agents bundling leads to higher joint welfare. Interestingly, a welfare improvement can in some cases occur despite a decrease in total contributions. On the contrary, when agents are heterogenous, for low income inequality bundling can lead to lower total contributions and may decrease welfare compared to a separate contribution scheme. Our findings have implications for the design of charitable institutions and international aid agencies. [source] Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approachPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2008A. Martinez Abstract The effect of biaxial strain on double gate (DG) nanoscaled MOSFET with channel lengths in the nanometre range is investigated using Non-Equilibrium Green's Functions (NEGF) simulations. The NEGF simulations are fully 2D in order to accurately evaluate the effects of strain in strongly confined channels. Starting with a 14 nm gate length DG MOSFET with a corresponding body thickness of 9 nm we scale the transistors to gate lengths of 10, 6 and 4 nm and body thicknesses of 6.1, 2.6 and 1.3 nm, respectively. The simulated ID-VG characteristics show 11% improvement in the oncurrent for the 14 nm gate length transistor due to the , valley splitting. This improvement in the on-current is due to separate contributions from the 2 fold and 4 fold valleys to the carrier transport. However, in the device with an extreme body thickness of 1.3 nm the strain has no impact on its performance because the strong confinement itself produces a large valley splitting. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] The basis for treatment in multiple sclerosisACTA NEUROLOGICA SCANDINAVICA, Issue 2006A. Compston Contemporary licensed treatments for multiple sclerosis fail to provide a solution for the disease because their effects are limited to a modest reduction in the frequency of new episodes. They do not reduce disability or materially influence the progressive phase of the disease. A contemporary strategy for management requires a more detailed analysis of the separate contributions to the clinical features and overall course made by inflammation, axonal injury, compensatory mechanisms, and remyelination. From this formulation emerges the need either for early and fully effective suppression of the inflammatory response, limiting the damage to all components of the axon-glial unit; or the development of strategies for axonal and myelin repair that solve the issues of controlled differentiation, delivery and timing of these cell and growth factor-based interventions. [source] | |||||||||||||