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Relative Dielectric Constant (relative + dielectric_constant)

Distribution by Scientific Domains

Physics and Astronomy	40%

Selected Abstracts

Direct chiral resolution of tartaric acid by ion-pair capillary electrophoresis using an aqueous background electrolyte with (1R,2R)-(,)-1,2-diaminocyclohexane as a chiral counterion

ELECTROPHORESIS, Issue 15 2003
Shuji Kodama
Abstract Chiral resolution of native DL -tartaric acid was achieved by ion-pair capillary electrophoresis (CE) using an aqueous-ethanol background electrolyte with (1R,2R)-(,)-1,2-diaminocyclohexane (R -DACH) as a chiral counterion. Factors affecting chiral resolution and migration time of tartaric acid were studied. By increasing the viscosity of the background electrolyte and the ion-pair formation, using organic solvents with a lower relative dielectric constant, resulted in a longer migration time. The optimum conditions for both high resolution and short migration time of tartaric acid were found to be a mixture of 65% v/v ethanol and 35% v/v aqueous solution containing 30 mMR -DACH and 75 mM phosphoric acid (pH 5.1) with an applied voltage of ,30 kV at 25°C, using direct detection at 200 nm. By using this system, the resolution (Rs) of racemic tartaric acid was approximately 1. The electrophoretic patterns of tartaric and malic acids suggest that two carboxyl groups and two hydroxyl groups of tartaric acid are associated with the enantioseparation of tartaric acid by the proposed CE method. [source]

Bi2O3,MoO3 Binary System: An Alternative Ultralow Sintering Temperature Microwave Dielectric

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 10 2009
Di Zhou
Preparation, phase composition, microwave dielectric properties, and chemical compatibility with silver and aluminum electrodes were investigated on a series of single-phase compounds in the Bi2O3,MoO3 binary system. All materials have ultralow sintering temperatures <820°C. Eight different xBi2O3,(1,x)MoO3 compounds between 0.2,x,0.875 were fabricated and the associated microwave dielectric properties were studied. The ,-Bi2Mo2O9 single phase has a positive temperature coefficient of resonant frequency (TCF) about +31 ppm/°C, with a permittivity ,r=38 and Qf=12 500 GHz at 300 K and at a frequency of 6.3 GHz. The ,-Bi2Mo3O12 and ,-Bi2MoO6 compounds both have negative temperature coefficient values of TCF,,215 and ,,114 ppm/°C, with permittivities of ,r=19 and 31, Qf=21 800 and 16 700 GHz at 300 K measured at resonant frequencies of 7.6 and 6.4 GHz, respectively. Through sintering the Bi2O3,2.2MoO3 at 620°C for 2 h, a composite dielectric containing both , and , phase can be obtained with a near-zero temperature coefficient of frequency TCF=,13 ppm/°C and a relative dielectric constant ,r=35, and a large Qf,12 000 GHz is also observed. Owing to the frequent difficulty of thermochemical interactions between low sintering temperature materials and the electrode materials during the cofiring, preliminary investigations are made to determine any major interactions with possible candidate electrode metals, Ag and Al. From the above results, the low sintering temperature, good microwave dielectric properties, chemical compatibility with Al metal electrode, nontoxicity and price advantage of the Bi2O3,MoO3 binary system, all indicate the potential for a new material system with ultralow temperature cofiring for multilayer devices application. [source]

Preparation of Highly Dense PZN,PZT Thick Films by the Aerosol Deposition Method Using Excess-PbO Powder

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 11 2007
Jong-Jin Choi
Lead zinc niobate,lead zirconate titanate thick films with a thickness of 50,100 ,m were deposited on silicon and alumina substrates using the aerosol deposition method. The effects of excess lead oxide (PbO) on stress relaxation during postannealing were studied. Excess PbO content was varied from 0 to 5 mol%. The as-deposited film had a fairly dense microstructure with nanosized grains. The films deposited on silicon were annealed at temperatures of 700°C, and the films deposited on sapphire were annealed at 900°C in an electrical furnace. The annealed film was detached and cracks were generated due to the high residual compressive stress and thermal stress induced by thermal expansion coefficient mismatch. However, the film deposited using powder containing 2% of excess PbO showed no cracking or detachment from the substrate after the postannealing process. The PbO evaporation at elevated temperature during the postannealing process seemed to have reduced the residual compressive stress. The remanent polarization and relative dielectric constant of the 50 ,m thick films annealed at 900°C were 43.1 ,C/cm2 and 1400, respectively, which were comparable with the values of a bulk specimen prepared by a powder sintering process. [source]

An impedance spectroscopy study in poly(butylene adipate) ionomers

ANNALEN DER PHYSIK, Issue 10 2004
F. Yakuphanoglu
Abstract Poly(butylenes adipate) ionomers (PBAi) were synthesized using dimethyl 5-sulfoisophthalate sodium salt (DMSI) up to 5 mol% of diacid monomer. We have investigated electrical and dielectric properties of the ionomers to evaluate alternating current (AC) parameters such as impedance, conductance, dielectric constant, admittance, susceptance, dielectric loss, and resistance by an impedance spectroscopy. It is seen that the ionic conductances of the ionomers increase with increasing content of DMSI. The AC conductance for the ionomers was found to vary as ,s with the index s , 1. A decrease in the relative dielectric constant of the ionomers is observed with the increase in the ionic content. The electrical relaxation in the dielectric spectra of the ionomers was not observed due to the orientation polarization of the dipoles. It is also observed that the tangent loss increases with the increase in the ionic content. [source]

Preparation and electrical characterization of amorphous BaO, SrO and Ba0.7Sr0.3O as high-k gate dielectrics

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010
D. Müller-Sajak
Abstract We report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n-Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultra-thin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high-k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr0.3O. This demonstrates the importance of both chemical and structural interface effects (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]