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Probe Microscopy (probe + microscopy)
Kinds of Probe Microscopy Selected AbstractsLocal Electrochemical Functionality in Energy Storage Materials and Devices by Scanning Probe Microscopies: Status and PerspectivesADVANCED MATERIALS, Issue 35 2010Sergei V. Kalinin Abstract Energy storage and conversion systems are an integral component of emerging green technologies, including mobile electronic devices, automotive, and storage components of solar and wind energy economics. Despite the rapidly expanding manufacturing capabilities and wealth of phenomenological information on the macroscopic device behaviors, the microscopic mechanisms underpinning battery and fuel cell operations in the nanometer,micrometer range are virtually unknown. This lack of information is due to the dearth of experimental techniques capable of addressing elementary mechanisms involved in battery operation, including electronic and ion transport, vacancy injection, and interfacial reactions, on the nanometer scale. In this article, a brief overview of scanning probe microscopy (SPM) methods addressing nanoscale electrochemical functionalities is provided and compared with macroscopic electrochemical methods. Future applications of emergent SPM methods, including near field optical, electromechanical, microwave, and thermal probes and combined SPM-(S)TEM (scanning transmission electron microscopy) methods in energy storage and conversion materials are discussed. [source] Atomic Structure and Electrical Properties of In(Te) Nanocontacts on CdZnTe(110) by Scanning Probe MicroscopyADVANCED FUNCTIONAL MATERIALS, Issue 2 2010Gili Cohen-Taguri Abstract Understanding complex correlations between the macroscopic device performance (largely dependent on the character of the metal,semiconductor contact) and the metallurgy of contact formation on the atomic level in cadmium zinc telluride (CdZnTe) radiation detectors remains a formidable challenge. In this work, an effort towards bridging that macro,nano knowledge gap is made by conducting a series of controlled experiments aimed at correlating electrical properties of the In contact to n-type CdZnTe(110) surface with the step-by-step process of contact formation. This can only be achieved by using high spatial resolution techniques, capable of conducting highly localized measurements on the nano- and sub-nanoscale, such as scanning probe microscopy. Scanning tunneling microscopy is used in situ to monitor the behavior of various In atom coverages on an atomically flat and ordered CdZnTe surface under well-controlled molecular beam epitaxial conditions in ultra-high vacuum. Electrical derivatives of atomic force microscopy are used to measure the electrical contact properties, such as contact potential difference and spreading resistance in torsion resonance tunneling mode. It is concluded that In atoms preferentially reacted with Te atomic-rows already at room temperature, forming nanometric patches of indium,telluride Schottky-type contacts. The methods developed in this study, in terms of both nanocontact fabrication and characterization (especially in terms of electrical properties) should benefit basic and applied research of any metal,semiconductor system. [source] Scanning Kelvin Probe Microscopy on Bulk Heterojunction Polymer BlendsADVANCED FUNCTIONAL MATERIALS, Issue 9 2009Klára Maturová Abstract Here, correlated AFM and scanning Kelvin probe microscopy measurements with sub-100,nm resolution on the phase-separated active layer of polymer-fullerene (MDMO-PPV:PCBM) bulk heterojunction solar cells in the dark and under illumination are described. Using numerical modeling a fully quantitative explanation for the contrast and shifts of the surface potential in dark and light is provided. Under illumination an excess of photogenerated electrons is present in both the donor and acceptor phases. From the time evolution of the surface potential after switching off the light the contributions of free and trapped electrons can be identified. Based on these measurements the relative 3D energy level shifts of the sample are calculated. Moreover, by comparing devices with fine and coarse phase separation, it is found that the inferior performance of the latter devices is, at least partially, due to poor electron transport. [source] Scanning Probe Microscopy: Electrical Scanning Probe Microscopy on Active Organic Electronic Devices (Adv. Mater.ADVANCED MATERIALS, Issue 1 20091/2009) The inside cover, drawn by Irene Wang, illustrates that electrical atomic force microscopy techniques can play an integral part in the research and development of organic electronic materials. On p. 19 Pingree, Reid, and Ginger highlight the use of scanning probe microscopy techniques in examining heterogeneities, defects, and various transport properties including injection, trapping, and generation/recombination in organic lightemitting diodes, thin-film transistors, and solar cells. [source] Electrical Scanning Probe Microscopy on Active Organic Electronic DevicesADVANCED MATERIALS, Issue 1 2009Liam S. C. Pingree Abstract Polymer- and small-molecule-based organic electronic devices are being developed for applications including electroluminescent displays, transistors, and solar cells due to the promise of low-cost manufacturing. It has become clear that these materials exhibit nanoscale heterogeneities in their optical and electrical properties that affect device performance, and that this nanoscale structure varies as a function of film processing and device-fabrication conditions. Thus, there is a need for high-resolution measurements that directly correlate both electronic and optical properties with local film structure in organic semiconductor films. In this article, we highlight the use of electrical scanning probe microscopy techniques, such as conductive atomic force microscopy (c-AFM), electrostatic force microscopy (EFM), scanning Kelvin probe microscopy (SKPM), and similar variants to elucidate charge injection/extraction, transport, trapping, and generation/recombination in organic devices. We discuss the use of these tools to probe device structures ranging from light-emitting diodes (LEDs) and thin-film transistors (TFT), to light-emitting electrochemical cells (LECs) and organic photovoltaics. [source] Glass-to-Metal Seal Interfacial Analysis using Electron Probe Microscopy for Reliable Solid Oxide Fuel CellsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 4 2009Scarlett J. Widgeon The chemical compatibility between sealing glasses and interconnect materials for solid oxide fuel cells (SOFCs) has been studied in SOFC environments. Two borate-based glass compositions were sealed to interconnect materials, 441 stainless-steel (441SS) and Mn1.5Co1.5O4 -coated 441SS. The Mn1.5Co1.5O4 -coated 441SS coupons were analyzed as-received using X-ray diffraction (XRD) and electron probe microanalysis (EPMA) to obtain structural information and concentration profiles, respectively. The concentration profiles and the lack of Fe-containing phases present in the XRD spectrum show Fe is present throughout the coating, suggesting that Fe is partially substituted in the Mn1.5Co1.5O4 spinel. The glass,metal coupons were heat treated in air at 750°C for 500 h. The specimens were analyzed by EPMA and scanning electron microscope (SEM) to obtain images of the glass microstructure at the interface, to verify seal adherence, and to record concentration profiles across the glass,metal interface, with an emphasis on Cr. In total, four seal configurations were tested and analyzed, and in all cases the glasses remained well adhered to the metal and coating, and there was no microstructural evidence of new reaction phases present at the interface. There was slight diffusion of Cr from the 441SS into the sealing glasses, and Cr diffusion was hindered by the coating on the coated 441SS samples. [source] The assessment of microscopic charging effects induced by focused electron and ion beam irradiation of dielectricsMICROSCOPY RESEARCH AND TECHNIQUE, Issue 3 2007Marion A. Stevens-Kalceff Abstract Energetic beams of electrons and ions are widely used to probe the microscopic properties of materials. Irradiation with charged beams in scanning electron microscopes (SEM) and focused ion beam (FIB) systems may result in the trapping of charge at irradiation induced or pre-existing defects within the implanted microvolume of the dielectric material. The significant perturbing influence on dielectric materials of both electron and (Ga+) ion beam irradiation is assessed using scanning probe microscopy (SPM) techniques. Kelvin Probe Microscopy (KPM) is an advanced SPM technique in which long-range Coulomb forces between a conductive atomic force probe and the silicon dioxide specimen enable the potential at the specimen surface to be characterized with high spatial resolution. KPM reveals characteristic significant localized potentials in both electron and ion implanted dielectrics. The potentials are observed despite charge mitigation strategies including prior coating of the dielectric specimen with a layer of thin grounded conductive material. Both electron- and ion-induced charging effects are influenced by a delicate balance of a number of different dynamic processes including charge-trapping and secondary electron emission. In the case of ion beam induced charging, the additional influence of ion implantation and nonstoichiometric sputtering from compounds is also important. The presence of a localized potential will result in the electromigration of mobile charged defect species within the irradiated volume of the dielectric specimen. This electromigration may result in local modification of the chemical composition of the irradiated dielectric. The implications of charging induced effects must be considered during the microanalysis and processing of dielectric materials using electron and ion beam techniques. Microsc. Res. Tech., 2007. © 2007 Wiley-Liss, Inc. [source] Special Issue on "Advanced Control Methods for Scanning Probe Microscopy"ASIAN JOURNAL OF CONTROL, Issue 2 2009Georg Schitter Guest Editor No abstract is available for this article. [source] Natural Aging in Al-Mg-Si Alloys , A Process of Unexpected Complexity,ADVANCED ENGINEERING MATERIALS, Issue 7 2010John Banhart The natural aging behavior of pure ternary Al-Mg-Si alloys is investigated by measuring hardness, electrical resistivity and positron lifetime, as well as carrying out thermal analysis and atom probe microscopy. It is found that several distinct temporal stages of natural aging can be distinguished in which one of these quantities shows a characteristic behavior and that these times coincide for many of these measurements. The rate of change in the measured data is correlated with proposed solute dynamics during natural aging for both aging that takes place prior to artificial aging (natural pre-aging) and after artificial underaging (natural secondary aging) heat treatments. Controlling factors for solute dynamics are discussed. [source] Atomic Structure and Electrical Properties of In(Te) Nanocontacts on CdZnTe(110) by Scanning Probe MicroscopyADVANCED FUNCTIONAL MATERIALS, Issue 2 2010Gili Cohen-Taguri Abstract Understanding complex correlations between the macroscopic device performance (largely dependent on the character of the metal,semiconductor contact) and the metallurgy of contact formation on the atomic level in cadmium zinc telluride (CdZnTe) radiation detectors remains a formidable challenge. In this work, an effort towards bridging that macro,nano knowledge gap is made by conducting a series of controlled experiments aimed at correlating electrical properties of the In contact to n-type CdZnTe(110) surface with the step-by-step process of contact formation. This can only be achieved by using high spatial resolution techniques, capable of conducting highly localized measurements on the nano- and sub-nanoscale, such as scanning probe microscopy. Scanning tunneling microscopy is used in situ to monitor the behavior of various In atom coverages on an atomically flat and ordered CdZnTe surface under well-controlled molecular beam epitaxial conditions in ultra-high vacuum. Electrical derivatives of atomic force microscopy are used to measure the electrical contact properties, such as contact potential difference and spreading resistance in torsion resonance tunneling mode. It is concluded that In atoms preferentially reacted with Te atomic-rows already at room temperature, forming nanometric patches of indium,telluride Schottky-type contacts. The methods developed in this study, in terms of both nanocontact fabrication and characterization (especially in terms of electrical properties) should benefit basic and applied research of any metal,semiconductor system. [source] Local Electrochemical Functionality in Energy Storage Materials and Devices by Scanning Probe Microscopies: Status and PerspectivesADVANCED MATERIALS, Issue 35 2010Sergei V. Kalinin Abstract Energy storage and conversion systems are an integral component of emerging green technologies, including mobile electronic devices, automotive, and storage components of solar and wind energy economics. Despite the rapidly expanding manufacturing capabilities and wealth of phenomenological information on the macroscopic device behaviors, the microscopic mechanisms underpinning battery and fuel cell operations in the nanometer,micrometer range are virtually unknown. This lack of information is due to the dearth of experimental techniques capable of addressing elementary mechanisms involved in battery operation, including electronic and ion transport, vacancy injection, and interfacial reactions, on the nanometer scale. In this article, a brief overview of scanning probe microscopy (SPM) methods addressing nanoscale electrochemical functionalities is provided and compared with macroscopic electrochemical methods. Future applications of emergent SPM methods, including near field optical, electromechanical, microwave, and thermal probes and combined SPM-(S)TEM (scanning transmission electron microscopy) methods in energy storage and conversion materials are discussed. [source] Vertically Aligned Single-Walled Carbon Nanotubes by Chemical Assembly , Methodology, Properties, and ApplicationsADVANCED MATERIALS, Issue 13 2010Peng Diao Abstract Single-walled carbon nanotubes (SWNTs), as one of the most promising one-dimension nanomaterials due to its unique structure, peculiar chemical, mechanical, thermal, and electronic properties, have long been considered as an important building block to construct ordered alignments. Vertically aligned SWNTs (v-SWNTs) have been successfully prepared by using direct growth and chemical assembly strategies. In this review, we focus explicitly on the v-SWNTs fabricated via chemical assembly strategy. We provide the readers with a full and systematic summary covering the advances in all aspects of this area, including various approaches for the preparation of v-SWNTs using chemical assembly techniques, characterization, assembly kinetics, and electrochemical properties of v-SWNTs. We also review the applications of v-SWNTs in electrochemical and bioelectrochemical sensors, photoelectric conversion, and scanning probe microscopy. [source] Magnetic Force Microscopy in the GHz RegimeIMAGING & MICROSCOPY (ELECTRONIC), Issue 3 2007A Study of the Magnetic Contrast from Hard Disk Writer Poles Scanning force microscopy has become in the last two decades the most widely applied method within the field of scanning probe microscopy. In certain cases atomic resolution can be obtained and a lot of specialised modes of application allow the local detection of a variety of probe-sample-interactions. This opens the possibility to analyse physical, chemical and even biological phenomena with an unprecedented sensitivity and resolution. [source] Supramolecular Organization of ssDNA-Templated ,-Conjugated Oligomers via Hydrogen BondingADVANCED MATERIALS, Issue 10-11 2009Mathieu Surin The templated self-assembly of water-soluble ,-conjugated molecules bearing a diaminotriazine moiety H-bonding to a single-strand oligothymine template leads to defined structures. We study these assemblies with molecular modeling, circular dichroism spectroscopy, and scanning probe microscopy, to get a better understanding of the factors governing the supramolecular organization and structural order. [source] Electrical Scanning Probe Microscopy on Active Organic Electronic DevicesADVANCED MATERIALS, Issue 1 2009Liam S. C. Pingree Abstract Polymer- and small-molecule-based organic electronic devices are being developed for applications including electroluminescent displays, transistors, and solar cells due to the promise of low-cost manufacturing. It has become clear that these materials exhibit nanoscale heterogeneities in their optical and electrical properties that affect device performance, and that this nanoscale structure varies as a function of film processing and device-fabrication conditions. Thus, there is a need for high-resolution measurements that directly correlate both electronic and optical properties with local film structure in organic semiconductor films. In this article, we highlight the use of electrical scanning probe microscopy techniques, such as conductive atomic force microscopy (c-AFM), electrostatic force microscopy (EFM), scanning Kelvin probe microscopy (SKPM), and similar variants to elucidate charge injection/extraction, transport, trapping, and generation/recombination in organic devices. We discuss the use of these tools to probe device structures ranging from light-emitting diodes (LEDs) and thin-film transistors (TFT), to light-emitting electrochemical cells (LECs) and organic photovoltaics. [source] Charge Trapping at the Dielectric of Organic Transistors Visualized in Real Time and Space,ADVANCED MATERIALS, Issue 5 2008Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric , visualized in real time and space , is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture). [source] The assessment of microscopic charging effects induced by focused electron and ion beam irradiation of dielectricsMICROSCOPY RESEARCH AND TECHNIQUE, Issue 3 2007Marion A. Stevens-Kalceff Abstract Energetic beams of electrons and ions are widely used to probe the microscopic properties of materials. Irradiation with charged beams in scanning electron microscopes (SEM) and focused ion beam (FIB) systems may result in the trapping of charge at irradiation induced or pre-existing defects within the implanted microvolume of the dielectric material. The significant perturbing influence on dielectric materials of both electron and (Ga+) ion beam irradiation is assessed using scanning probe microscopy (SPM) techniques. Kelvin Probe Microscopy (KPM) is an advanced SPM technique in which long-range Coulomb forces between a conductive atomic force probe and the silicon dioxide specimen enable the potential at the specimen surface to be characterized with high spatial resolution. KPM reveals characteristic significant localized potentials in both electron and ion implanted dielectrics. The potentials are observed despite charge mitigation strategies including prior coating of the dielectric specimen with a layer of thin grounded conductive material. Both electron- and ion-induced charging effects are influenced by a delicate balance of a number of different dynamic processes including charge-trapping and secondary electron emission. In the case of ion beam induced charging, the additional influence of ion implantation and nonstoichiometric sputtering from compounds is also important. The presence of a localized potential will result in the electromigration of mobile charged defect species within the irradiated volume of the dielectric specimen. This electromigration may result in local modification of the chemical composition of the irradiated dielectric. The implications of charging induced effects must be considered during the microanalysis and processing of dielectric materials using electron and ion beam techniques. Microsc. Res. Tech., 2007. © 2007 Wiley-Liss, Inc. [source] Epitaxial graphene: a new materialPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 7 2008Th. Seyller Abstract Graphene, a two-dimensional sheet of sp2 -bonded carbon arranged in a honeycomb lattice, is not only the building block of fullerenes, carbon nano tubes (CNTs) and graphite, it also has interesting properties, which have caused a flood of activities in the past few years. The possibility to grow graphitic films with thicknesses down to a single graphene layer epitaxially on SiC{0001} surfaces is promising for future applications. The two-dimensional nature of epitaxial graphene films make them ideal objects for surface science techniques such as photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy. The present article summarizes results from recent photoemission studies covering a variety of aspects such as the growth of epitaxial graphene and few layer graphene, the electronic and structural properties of the interface to the SiC substrate, and the electronic structure of the epitaxial graphene stacks. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Phenomenological description of domain recording in ferroelectric semiconductors by using atomic force microscopyPHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 10 2005Anna N. Morozovska Abstract The equilibrium sizes of domains caused by the electric field of the atomic force microscope tip in ferroelectric semicon-ductor crystals have been calculated. The domain was consi-dered as a prolate semi-ellipsoid with rather thin domain walls. For the first time we modified the Landauer model al-lowing for semiconductor properties of the sample and the surface energy of the domain butt. The free carriers inside the crystal lead to the formation of a screening layer around the domain, which partially shields its interior from the depolari-zation field. The obtained dependence of domain radius on applied voltage is in a good quantitative agreement with the ones of submicron ferroelectric domains recorded by high-voltage atomic force and scanning probe microscopy in LiNbO3, BaTiO3 and RbTiOPO4 crystals. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Specific response of ultra-thin metal oxide films to gasPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 12 2009etkus Abstract Tin and indium oxide ultra-thin film (UTF) based structures are investigated in the present study. Current-voltage characteristics (IVC) are measured in the samples by a contact current mode of scanning probe microscopy (SPM). It is proved that the IVC splits into two paths corresponding to increase and decrease of applied voltage, respectively. Detailed investigations of the electrical properties of the ultra-thin metal oxide (MOX) films revealed a dependence of the IVC on the structure of the films, on initial conductivity and on the surrounding gases. It was proved that the IVC is typically split only if the maximum dc-voltage exceeds some critical magnitude that is not the same in indium and tin oxide based films. The properties of the ultra-thin MOX structures are explained in terms of distribution of stoichiometry in MOX based nanometer systems. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Effect of fabrication temperature on strain-sensing capacity of polypyrrole-coated conductive fabricsPOLYMER INTERNATIONAL, Issue 7 2007Joanna Tsang Abstract Textile strain sensors were made from polypyrrole-coated stretchable fabrics by a method of screen printing with chemical vapor deposition. The effect of polymerization temperature on the sensing performances was studied. It was found that polymerization at low temperature significantly improved the electrical conductivity, strain sensitivity and environmental stability of the fabric sensors. The conductive fabrics were characterized using X-ray diffraction, thermogravimetry, contact angle measurements, particle size analysis, scanning electron microscopy and scanning probe microscopy. Powders of pure polypyrrole prepared by the same fabrication method were characterized for a better understanding of the polypyrrole coating. Copyright © 2007 Society of Chemical Industry [source] Video-rate scanning probe control challenges: setting the stage for a microscopy revolutionASIAN JOURNAL OF CONTROL, Issue 2 2009M. J. Rost Abstract Scanning probe microscopy is at the verge of revolutionizing microscopy once again. Video-rate scanning tunneling microscope (STM) and video-rate atomic force microscope (AFM) technology will enable the direct observation of many dynamic processes that are impossible to observe today, such as atom or molecule diffusion, real time film growth, or catalytic reactions. In this paper we discuss the critical aspects that have to be taken into account when working on increasing the imaging speed of scanning probe microscopes. We highlight the state-of-the-art developments in the control of the piezoelectric scanning elements and describe the latest innovations regarding the design and construction of the whole mechanical loop including new scanner geometries. We identify critical aspects for which no obvious solution exists and aspects where advanced control engineering can help, like piezo non-linearities, the acceleration limit and the challenging technical requirements for the preamplifiers that are needed for measuring a tunneling current. Finally, we provide an overview of a number of new directions that are being pursued to solve the problems currently encountered in scanning probe technology. Copyright © 2009 John Wiley and Sons Asia Pte Ltd and Chinese Automatic Control Society [source] High-speed serial-kinematic SPM scanner: design and drive considerations,ASIAN JOURNAL OF CONTROL, Issue 2 2009Kam K. Leang Abstract This paper describes the design of a flexure-guided, two-axis nanopositioner (scanner) driven by piezoelectric stack actuators. The scanner is specifically designed for high-speed scanning probe microscopy (SPM) applications, such as atomic force microscopy (AFM). A high-speed AFM scanner is an essential component for acquiring high-resolution, three-dimensional, time-lapse images of fast processes such as the rapid movement of cells and the diffusion of DNA molecules. A two-axis SPM scanner is proposed, where the slow and fast scanning axes are serially connected and flexure guided to minimize runout. The scanner's achievable scan range is approximately 10µm × 10µm. Finite element analysis is utilized to optimize the mechanical resonance frequencies of the scanner. Experimental results show a first major resonance in the slow and fast axis at 1.5 and 29,kHz, respectively. This paper also discusses the various tradeoffs between speed, range, electrical requirements, and scan trajectory design for high-speed nanopositioning. Copyright © 2009 John Wiley and Sons Asia Pte Ltd and Chinese Automatic Control Society [source] Topological and Electron-Transfer Properties of Yeast Cytochrome c Adsorbed on Bare Gold ElectrodesCHEMPHYSCHEM, Issue 11 2003Beatrice Bonanni Dr. Abstract The redox metalloprotein yeast cytochrome c was directly self-chemisorbed on "bare" gold electrodes through the free sulfur-containing group Cys102. Topological, spectroscopic, and electron transfer properties of the immobilised molecules were investigated by in situ scanning probe microscopy and cyclic voltammetry. Atomic force and scanning tunnelling microscopy revealed individual protein molecules adsorbed on the gold substrate, with no evidence of aggregates. The adsorbed proteins appear to be firmly bound to gold and display dimensions in good agreement with crystallographic data. Cyclic voltammetric analysis showed that up to 84,% of the electrode surface is functionalised with electroactive proteins whose measured redox midpoint potential is in good agreement with the formal potential. Our results clearly indicate that this variant of cytochrome c is adsorbed on bare gold electrodes with preservation of morphological properties and redox functionality. [source] | ||||||||||||||||