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Power-law Dependence (power-law + dependence)
Selected AbstractsOrders-of-Magnitude Reduction of the Contact Resistance in Short-Channel Hot Embossed Organic Thin Film Transistors by Oxidative Treatment of Au-Electrodes,ADVANCED FUNCTIONAL MATERIALS, Issue 15 2007B. Stadlober Abstract In this study we report on the optimization of the contact resistance by surface treatment in short-channel bottom-contact OTFTs based on pentacene as semiconductor and SiO2 as gate dielectric. The devices have been fabricated by means of nanoimprint lithography with channel lengths in the range of 0.3,,m,<,L,<,3.0,,m. In order to reduce the contact resistance the Au source- and drain-contacts were subjected to a special UV/ozone treatment, which induced the formation of a thin AuOx layer. It turned out, that the treatment is very effective (i),in decreasing the hole-injection barrier between Au and pentacene and (ii),in improving the morphology of pentacene on top of the Au contacts and thus reducing the access resistance of carriers to the channel. Contact resistance values as low as 80,,,cm were achieved for gate voltages well above the threshold. In devices with untreated contacts, the charge carrier mobility shows a power-law dependence on the channel length, which is closely related to the contact resistance and to the grain-size of the pentacene crystallites. Devices with UV/ozone treated contacts of very low resistance, however, exhibit a charge carrier mobility in the range of 0.3,cm2,V,1,s,1,<,,,<,0.4,cm2,V,1,s,1 independent of the channel length. [source] Photoresponse Properties of CdSe Single-Nanoribbon Photodetectors,ADVANCED FUNCTIONAL MATERIALS, Issue 11 2007Y. Jiang Abstract Photodetectors are fabricated from individual single-crystal CdSe nanoribbons, and the photoresponse properties of the devices are studied systematically. The photodetector shows a high sensitivity towards excitation wavelength with a sharp cut-off at 710,nm, corresponding to the bandgap of CdSe. The device exhibits a high photo-to-dark current ratio of five orders of magnitude at 650,nm, and can function with excellent stability, reproducibility, and high response speed (<,1,ms) in a wide range of switching frequency (up to 300,Hz). The photocurrent of the device shows a power-law dependence on light intensity. This finding together with the analysis of the light intensity-dependent response speed reveals the existence of various traps at different energy levels (shallow and deep) in the bandgap. Coating with a thin SiO2 isolating layer increases the photocurrent but decreases the response speed of the CdSe nanoribbon, which is attributed to reduction of recombination centers on ribbon surface. [source] Extracting Parameters from the Current,Voltage Characteristics of Organic Field-Effect TransistorsADVANCED FUNCTIONAL MATERIALS, Issue 11 2004G. Horowitz Abstract Organic field-effect transistors were fabricated with vapor-deposited pentacene on aluminum oxide insulating layers. Several methods are used in order to extract the mobility and threshold voltage from the transfer characteristic of the devices. In all cases, the mobility is found to depend on the gate voltage. The first method consists of deriving the drain current as a function of gate voltage (transconductance), leading to the so-called field-effect mobility. In the second method, we assume a power-law dependence of the mobility with gate voltage together with a constant contact resistance. The third method is the so-called transfer line method, in which several devices with various channel length are used. It is shown that the mobility is significantly enhanced by modifying the aluminum oxide layer with carboxylic acid self-assembled monolayers prior to pentacene deposition. The methods used to extract parameters yield threshold voltages with an absolute value of less than 2 V. It is also shown that there is a shift of the threshold voltage after modification of the aluminum oxide layer. These features seem to confirm the validity of the parameter-extraction methods. [source] Properties of solid solutions of poly(ethylene oxide)/epoxidized natural rubber blends and LiClO4JOURNAL OF APPLIED POLYMER SCIENCE, Issue 1 2008C. H. Chan Abstract Solid solutions of blends of poly(ethylene oxide) (PEO) and epoxidized natural rubber (ENR) comprising 12 wt % of LiClO4 were studied. Two glass transition temperatures, corresponding to the Tgs of the constituents, confirm immiscibility of the polymers over the entire composition range. It turns out that the Tgs of both polymers slightly increase after addition of salt to the blends. This shift is approximately constant over the whole range of blend composition. Accordingly, Tg measurements reveal that the salt dissolves to approximately equal relative amounts in the two phases. The degree of crystallinity of PEO in blends with ENR descends only to a minor extent with ENR content. However, addition of salt leads first to decreasing crystallinity and second this decrease becomes more pronounced with the addition of ENR. It shows that under these experimental conditions the salt content in PEO increases as compared to ENR. As one expects, the rate of isothermal crystallization does not change in blends as long as PEO is in excess. The situation changes again when salt is added. The rate decreases in a certain range of crystallization temperatures when ENR is added, demonstrating that salt is favorably dissolved in PEO. Conductivity was measured in polymers comprising different salt concentrations. A power-law dependence of conductivity on salt concentration was found. It results that the mobility of charge carriers in PEO exceeds that of ENR by five orders of magnitude. Therefore, the conductivity in blends is primarily governed by PEO as long as PEO is in excess. Conductivity measurements reveal again that salt is preferably dissolved in PEO. The distribution coefficient is estimated. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008 [source] Raman spectroscopy of optical phonon confinement in nanostructured materialsJOURNAL OF RAMAN SPECTROSCOPY, Issue 6 2007Akhilesh K. Arora Abstract If the medium surrounding a nano-grain does not support the vibrational wavenumbers of a material, the optical and acoustic phonons get confined within the grain of the nanostructured material. This leads to interesting changes in the vibrational spectrum of the nanostructured material as compared to that of the bulk. Absence of periodicity beyond the particle dimension relaxes the zone-centre optical phonon selection rule, causing the Raman spectrum to have contributions also from phonons away from the Brillouin-zone centre. Theoretical models and calculations suggest that the confinement results in asymmetric broadening and shift of the optical phonon Raman line, the magnitude of which depends on the widths of the corresponding phonon dispersion curves. This has been confirmed for zinc oxide nanoparticles. Microscopic lattice dynamical calculations of the phonon amplitude and Raman spectra using the bond-polarizability model suggest a power-law dependence of the peak-shift on the particle size. This article reviews recent results on the Raman spectroscopic investigations of optical phonon confinement in several nanocrystalline semiconductor and ceramic/dielectric materials, including those in selenium, cadmium sulphide, zinc oxide, thorium oxide, and nano-diamond. Resonance Raman scattering from confined optical phonons is also discussed. Copyright © 2007 John Wiley & Sons, Ltd. [source] Recombination lines and free-free continua formed in asymptotic ionized winds: Analytic solution for the radiative transferASTRONOMISCHE NACHRICHTEN, Issue 7 2009R. Ignace Abstract In dense hot star winds, the infrared and radio continua are dominated by free-free opacity and recombination emission line spectra. In the case of a spherically symmetric outflow that is isothermal and expanding at constant radial speed, the radiative transfer for the continuum emission from a dense wind is analytic. Even the emission profile shape for a recombination line can be derived. Key to these derivations is that the opacity scales with only the square of the density. These results are well-known. Here an extension of the derivation is developed that also allows for line blends and the inclusion of an additional power-law dependence beyond just the density dependence. The additional power-law is promoted as a representation of a radius dependent clumping factor. It is shown that differences in the line widths and equivalent widths of the emission lines depend on the steepness of the clumping power-law. Assuming relative level populations in LTE in the upper levels of He II, an illustrative application of the model to Spitzer/IRS spectral data of the carbon-rich star WR 90 is given (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | ||||||||||