Plane Sapphire Substrates (plane + sapphire_substrate)

Distribution by Scientific Domains


Selected Abstracts


Activation energy of Mg in a -plane Ga1,xInx N (0 < x < 0.17)

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2009
Daisuke Iida
Abstract We investigated the electrical properties of Mg-doped Ga1,xInx N grown on an a -plane template. High-hole-concentration p-type Mg-doped Ga1,xInx N films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a -plane GaN grown on an r -plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 1019 cm,3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a -plane Ga0.83In0.17N was found to be as low as 48 meV. ( 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


MOVPE growth and characterization of a -plane AlGaN over the entire composition range

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 7 2010
Masihhur R. Laskar
Abstract We report the metal organic vapor phase epitaxy (MOVPE) growth and characterization of non-polar (110) a -plane Alx Ga1,xN on (102) r -plane sapphire substrates over the entire composition range. Alx Ga1,xN samples with ,0.8 ,m thick layers and with x = 0, 0.18, 0.38, 0.46, 0.66, and 1.0 have been grown on r -plane sapphire substrates. The layer quality can be improved by using a 3-stage AlN nucleation layer and appropriate V/III ratio switching following nucleation. All a -plane AlGaN epilayers show an anisotropic in-plane mosaicity, strongly influenced by Al incorporation and growth conditions. Careful lattice parameter measurements show anisotropic in-plane strain that results in an orthorhombic distortion of the hexagonal unit cell, making Al composition determination from X-ray diffraction difficult. In general lower Al incorporation is seen in a -plane epilayers compared to c -plane samples grown under the same conditions. ( 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Polarized Raman scattering studies of nonpolar a -plane GaN films grown on r -plane sapphire substrates by MOCVD

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 15 2006
Haiyong Gao
Abstract Nonpolar (110) a -plane GaN thin films were grown on r -plane (102) sapphire substrates by low-pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the a -plane GaN films were investigated by means of polarized Raman scattering spectra in backscattering configurations. The experimental results show that there are strong anisotropic in-plane stresses within the epitaxial a -plane GaN films by calculating the corresponding stress tensors. The temperature dependence of Raman scattering spectra was studied in the range from 100 K to 550 K. The measurements reveal that the Raman phonon frequencies decrease with increasing temperature. The temperature at which nonpolar a -plane GaN films are strain free is discussed. ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r -plane sapphire substrates

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003
W. H. Sun
Abstract GaN and GaN/Al0.25Ga0.75N multiple quantum wells (MQWs) over c - and r -plane sapphire substrates have been grown by metal-organic chemical vapor deposition. A comparative study of photoluminescence (PL) in GaN epitaxial layers and AlGaN/GaN MQWs on these two types of substrates is reported. At low excitation levels, the measured room temperature PL signal in GaN layers grown over r -plane sapphire was more than order of magnitude lower than in GaN on c -plane substrates. In contrast, the emission intensity from AlGaN/GaN MQWs grown over r -plane substrates was almost 30 times stronger than in the structures grown over c -plane sapphire. Furthermore, with excitation power density up to 1 MW/cm2, the PL peak position for the non-polar MQWs kept completely stable whereas the one for the c -plane structures exhibited a blue shift as large as 250 meV. We attribute this large difference in the ultraviolet emission intensity to the suppression of a strong quantum Stark effect in the AlGaN/GaN MQWs on the r -plane sapphire. ( 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Growth of GaN on a -plane sapphire: in-plane epitaxial relationships and lattice parameters

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003
T. Paskova
Abstract We have studied GaN films grown on a -plane sapphire substrates by both hydride vapor phase epitaxy (HVPE) and metalorganic vapor phase epitaxy (MOVPE). The in-plane orientation relationships between the epitaxial films and the substrate are determined to be [11,20]GaN , [0001]sapphire and [1,100]GaN , [1,100]sapphire in the HVPE growth, while [1,100]GaN , [0001]sapphire and [11,20]GaN , [1,100]sapphire are found in the MOVPE growth. The different orientation preferences are attributed to the atom termination of the sapphire surface determined by the substrate treatment used in the different growth methods. The effect of the lattice matches on the in-plane lattice parameters and strain anisotropy in the two cases is studied. ( 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009
Jie-Jun Wu
Abstract AlN was grown on r - and c -plane sapphire substrates by low-pressure hydride vapor phase epitaxy (LP-HVPE). Nitridation and buffer methods were used and compared. Results show that the buffer method is appropriate for the growth of a-plane AlN. In-plane stresses were measured and found to be different in the two in-plane directions parallel and perpendicular to the AlN c -axis. In-plane stress anisotropy is reduced at high temperature leading to a smoother surface, partly owing to a decreased difference in the growth rates between two in-plane directions. However, too high a temperature decreases the crystal quality of a-plane AlN. Thus, there exists an optimal temperature range for the growth of a-plane AlN, in which improved crystal and surface qualities can both be obtained. ( 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Morphological evaluation of epitaxial GaN grown on r -plane sapphire by metalorganic vapor-phase epitaxy

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2006
K. Kusakabe
Abstract Morphological evaluation of epitaxial GaN films grown on r -plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The surface frequently showed rough morphology when the GaN was grown at conventional epitaxial conditions. It was found, however, that the surface roughness was improved by using appropriate combinations of growth temperature and low-temperature GaN buffer thickness. Thereby, a peak-to-valley value of the roughness was reduced from 4 ,m to 0.8 ,m. The rotation of crystallographic orientations was observed in the flattened GaN films. ( 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Structural and electrical characterization of a -plane GaN grown on a -plane SiC

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
M. D. Craven
Abstract Planar nonpolar () a -plane GaN thin films were grown on () a -plane 6H-SiC substrates via metalorganic chemical vapor deposition by depositing a high temperature AlN buffer layer prior to the epitaxial GaN growth. The orientation of the GaN film and AlN buffer layer directly match that of the SiC substrate, as determined by on- and off-axis X-ray diffraction measurements. The morphological evolution of GaN grown on the AlN buffer layers was investigated using atomic force microscopy. Microstructural characterization of the coalesced a -plane GaN films provided by plan-view transmission electron microscopy revealed threading dislocation and stacking fault densities of ,3 1010 cm,2 and ,7 105 cm,1, respectively. Structural comparisons to a -plane GaN films grown on r -plane sapphire substrates are presented. Si-doped films were grown with a variety of Si/Ga ratios and electrically characterized using Hall effect measurements. A maximum Hall mobility of 109 cm2/Vs was attained at a carrier concentration of 1.8 1019 cm,3. [source]