Plane InN (plane + inn)

Distribution by Scientific Domains


Selected Abstracts


Impact of n-type doping on the terahertz surface emission from c -plane InN

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2010
V. M. Polyakov
Abstract We theoretically investigate the influence of n-type doping on the terahertz (THz) electric field emission from unbiased c -plane InN surfaces using the ensemble Monte Carlo (MC) method. It is shown that the increase of n-type doping has twofold effect on the THz surface emission. The detrimental effect of electron drift mobility decrease is compensated by doping-derived electrons constructively contributing to the total dynamic dipole responsible for a generation of the THz electric field pulse emission from InN surface. [source]


Optical anisotropy of A - and M -plane InN grown on free-standing GaN substrates

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 5 2010
P. Schley
Abstract Wurtzite A - and M -plane InN films were grown by molecular beam epitaxy (MBE) on free-standing GaN substrates. Spectroscopic ellipsometry (SE) in the photon energy range from 0.56 up to 15,eV was applied in order to determine the ordinary and extraordinary complex dielectric function (DF) of InN. A distinct optical anisotropy was found over the whole energy range. The extraordinary absorption edge in comparison to the ordinary one is shifted to higher energies confirming previous studies. The investigations in the upper vacuum-ultraviolet (VUV) spectral range (9.5,15,eV) yielded transition energies for four critical points (CPs) of the band structure (BS) which have not been observed so far. [source]


TEM characterization of M -plane InN grown on (100) LiAlO2 substrate by RF-MBE

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009
Hirokazu Nozawa
Abstract In this study, we characterized the microstructure of M -plane InN using transmission electron microscopy (TEM). The M -plane InN was grown on a (100) LiAlO2 substrate using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). We determined the epitaxial relationships of the M -plane InN and LiAlO2 using selected area electron diffraction (SAED). The epitaxial relationships were exactly the same as the M -plane GaN grown on the same substrate. Also, the M -plane InN was grown on the (100) LiAlO2 despite the high lattice mismatches between M -plane InN and LiAlO2. We observed a high density of stacking faults parallel to (0001)InN. The density was estimated about 1.8106 cm,1, which was one order of magnitude higher than that of non-polar GaN. The correlation between threading dislocations and stacking faults is investigated. ( 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Microstructure of A -plane InN grown on R -plane sapphire by ECR-MBE

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
S. Watanabe
Abstract We used electron cyclotron resonance plasma-excited molecular beam epitaxy (ECR-MBE) to grow A -plane (110) InN on nitridated R -plane (102) sapphire and then measured the structural properties using transmission electron microscopy (TEM). We determined the epitaxial relationship between A -plane InN and R -plane sapphire to be (110)InN // (102)sapphire and [100]InN // [110]sapphire. Moreover, the results indicated that the nitridation of the sapphire produced a (001) cubic AlN layer, and this layer caused the subsequent InN to have its a-axis normal to the interface. Also, by using two diffraction vector orientations in the TEM measurement, we found that dislocations with a screw component had a density of about 5 1010 cm,2, which is about ten times higher than that with an edge component. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Growth of A -plane (11-20) In-rich InGaN on R -plane (10-12) sapphire by RF-MBE

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
M. Noda
Abstract Non-polar A -plane (11-20) high In content (In-rich) InGaN was grown on R -plane (10-12) sapphire with an InN template by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). Nitridation of R -plane sapphire was carried out at 300 C for 2 hours by RF-nitrogen plasma. A template of A -plane InN was grown at 400 C. The In-rich InGaN films were then grown at the same temperature on the InN template. We characterized the films using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM) and photo-luminescence (PL). These results indicated clearly that non-polar In0.71Ga0.29N was successfully obtained with a PL emission at approximately 1.1 eV. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]