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Plasma Conditions (plasma + condition)

Distribution by Scientific Domains

Physics and Astronomy	50%

Selected Abstracts

Double Excited High-n Spin Dependent Atomic Structure Scaling Laws for He I: Application to Radiative Properties for Edge Plasma Conditions

CONTRIBUTIONS TO PLASMA PHYSICS, Issue 7-9 2006
E. H. Guedda
Abstract We present our numerical calculations of dielectronic recombination rate coefficients which are spin dependent (2lnl , -1snl1L, 1snl3L ) and develop scaling relations which are converging for all spin (S), angular (L) and main (n) quantum numbers. The influence of atomic data inaccuracies, spin dependent channelling of dielectronic recombination rates and collisions on the atomic/ionic fractions is discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Analysis of Particle Pumping Using SOLDOR/NEUT2D Code in the JT-60U Tokamak

CONTRIBUTIONS TO PLASMA PHYSICS, Issue 1-3 2008
H. Kawashima
Abstract In order to understand the particle pumping on JT-60U, we analyze the roles of atomic and molecular processes using SOLDOR/NEUT2D code. A case of short strike point distance shows that most of neutrals produced on the targets go toward the exhaust slot directly. Whereas, neutrals are scattered in the spherically at random for the long distance case by collision processes and a few of them go toward the slot. It is clarified that the incident neutrals to the slot at low ne/high Te divertor plasma condition are dominated by atoms. Those at high ne/low Te condition are dominated by molecules due to elastic collision. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Characteristics of CVD silicon oxide films: Effect of discharge form on formation and properties of films

HEAT TRANSFER - ASIAN RESEARCH (FORMERLY HEAT TRANSFER-JAPANESE RESEARCH), Issue 2 2004
Kazuhiro Ishimaru
Abstract A silent discharge is one of the simplest methods for realizing a nonequilibrium plasma condition at atmospheric pressure. In this study, nonequilibrium plasma chemical reactions by this discharge have been applied to a remote plasma chemical vapor deposition (CVD) of silicon oxide films using tetraethylorthosilicate (TEOS) and oxygen. Film characteristics obtained by this CVD have been investigated for applications to advanced semiconductor devices. Conditions for depositing films with high quality have been investigated minutely. From these results, it has been clarified that silicon oxide films with high quality and excellent step coverage can be obtained by plasma excitation using pulsed silent discharge. It has also been clarified that films with similar characteristics can be obtained by plasma excitation using low-frequency AC silent discharge at subatmospheric pressure. © 2004 Wiley Periodicals, Inc. Heat Trans Asian Res, 33(2): 106,116, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/htj.20000 [source]

Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 3-4 2010
Petr Sládek
Abstract In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Protein Immobilization Using Atmospheric-Pressure Dielectric-Barrier Discharges: A Route to a Straightforward Manufacture of Bioactive Films

PLASMA PROCESSES AND POLYMERS, Issue 2 2008
Pieter Heyse
Abstract An alternative single-step method for biomolecule entrapment in atmospheric plasma polymers is described. Relying on our experience to fabricate organic coatings at mild plasma conditions, fluorescent proteins and an organic coating precursor were simultaneously introduced to the DBD. Fluorescence microscopy and spectrum analysis unambiguously illustrate the single-step protein immobilization procedure using DBD. Moreover, in contrast to covalent immobilization procedures, the developed technique showed a homogeneous protein distribution in the coating. [source]

Front Cover: Plasma Process.

PLASMA PROCESSES AND POLYMERS, Issue 4-5 2006
Polym.
Front Cover: Organosilicon plasma polymer thin films undergo modifications as they are exposed to an oxygen plasma. Under well chosen oxygen plasma conditions, they can even be converted into SiO2 -like films as shown by FTIR transmission spectra and X-ray reflectometry measurements. Further details can be found in the Full Paper by A. Granier*, G. Borvon, A. Bousquet, A. Goullet, C. Leteinturier, and A. van der Lee on page 365. [source]