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Phase Deposition (phase + deposition)
Selected AbstractsVapor-Phase Deposition of Monofunctional Alkoxysilanes for Sub-Nanometer-Level Biointerfacing on Silicon Oxide SurfacesADVANCED FUNCTIONAL MATERIALS, Issue 1 2010Brian Dorvel Abstract Improving the performance and lowering the analyte detection limits of optical and electronic biosensors is essential for advancing wide ranging applications in diagnostics and drug discovery. Most sensing methods require direct linkage of a recognition element and a sensor, which is commonly accomplished through an organic monolayer interface. Alkoxyorganosilanes are typically used to prepare sensor surfaces on dielectric oxides. However, many silanes lead to roughened or thick interfaces that degrade device sensitivity. Here, controlled vapor phase deposition of monoalkoxysilanes is found to lead to monolayers resistant to elevated temperatures and extreme pH conditions. The formation of high density, subnanometer monolayers is demonstrated by ellipsometry, XPS, and AFM. The uniform attachment of these monofunctional silanes to such biosensing platforms as microarrays, field effect devices, and the formation of surface enhanced Raman spectroscopy substrates is demonstrated. The advantages of using this silane deposition protocol for the above technologies are also discussed. [source] Self-Organized Organic Thin-Film Transistors on Plastic,ADVANCED MATERIALS, Issue 8 2004Y. Choi The development of the self-organized growth of pentacence thin films on the channel region of a thin-film transistor (TFT) using surface modifications induced by organic vapor phase deposition is reported (see Figure). A bottom-contact TFT on plastic using an organic gate insulator of cross-linked poly-(4-vinylphenol) exhibited a field-effect mobility of 1.2 cm2/Vs and an on/off current ratio of ,,107. [source] Electrical characteristics of temperature-difference liquid phase deposited SiO2 on GaN with (NH4)2Sx treatmentPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 11 2008Ming-Kwei Lee Abstract The characteristics of a SiO2 film grown on (NH4)2Sx treated GaN by temperature-difference liquid phase deposition were investigated. Hydrofluorosilicic acid and boric acid were used as deposition solutions. For GaN without the (NH4)2Sx treatment, an Al/SiO2/GaN MOS diode shows poor electrical characteristics due to the native oxides existing at the interface. With (NH4)2Sx treatment of GaN, a stable sulfide-terminated surface is obtained and the leakage current density of SiO2/GaN is improved from 6.15 × 10,4 A/cm2 to 2.08 × 10,5 A/cm2 at the electric field of 2 MV/cm. The effective oxide charges decrease from 6.09 × 1011 C/cm2 to 2.23 × 1011 C/cm2. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Composite thin films of poly(phenylene oxide)/poly(styrene) and PPO/silver via vapor phase depositionPOLYMERS FOR ADVANCED TECHNOLOGIES, Issue 10 2009I. S. Bayer Abstract We report fabrication of thin (100,300,nm) poly(phenylene oxide) (PPO) films and their composites with poly (styrene) (PS) and silver (Ag) nanoparticles using a one-step electron beam-assisted vapor phase co-deposition technique. Surface morphology and the structure of the deposited polymer thin film composites were characterized by FTIR, Raman, X-ray spectroscopy, and contact angle measurements. As-deposited PPO films and PPO/Ag composites were of porous nature and contrary to solvent casting techniques were free from nodular growth. In the case of PPO/PS thin film polymer composites, however, film morphology displayed nodular growth of PPO with nodule diameters of about ,200,nm and height of approximately 50,nm. Unique morphological changes on the porous PPO thin film surface were noticed at different Ag filling ratios. Further, the capacitance of PPO/Ag composites (<16 wt%) were measured under radio-frequency conditions and they were functional up to 100,MHz with an average capacitance density of about 2,nF/cm2. The fabricated PPO-based composite systems are discussed for their potential applications including embedded capacitor technology. Copyright © 2008 John Wiley & Sons, Ltd. [source] | ||||||||||