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Pentacene Channel (pentacene + channel)

Distribution by Scientific Domains

Polymers and Materials Science	75%

Selected Abstracts

High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

ADVANCED MATERIALS, Issue 42 2009
Kwang H. Lee
Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ,1,cm2 V,1 s,1 and large memory window of ,20,V are achieved through the organic ferroelectric, inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20,V switching for ZnO- and pentacene-FeTFTs. [source]

High Definition Digital Fabrication of Active Organic Devices by Molecular Jet Printing,

ADVANCED FUNCTIONAL MATERIALS, Issue 15 2007
J. Chen
Abstract We introduce a high resolution molecular jet (MoJet) printing technique for vacuum deposition of evaporated thin films and apply it to fabrication of 30,,m pixelated (800,ppi) molecular organic light emitting devices (OLEDs) based on aluminum tris(8-hydroxyquinoline) (Alq3) and fabrication of narrow channel (15,,m) organic field effect transistors (OFETs) with pentacene channel and silver contacts. Patterned printing of both organic and metal films is demonstrated, with the operating properties of MoJet-printed OLEDs and OFETs shown to be comparable to the performance of devices fabricated by conventional evaporative deposition through a metal stencil. We show that the MoJet printing technique is reconfigurable for digital fabrication of arbitrary patterns with multiple material sets and high print accuracy (of better than 5,,m), and scalable to fabrication on large area substrates. Analogous to the concept of "drop-on-demand" in Inkjet printing technology, MoJet printing is a "flux-on-demand" process and we show it capable of fabricating multi-layer stacked film structures, as needed for engineered organic devices. [source]

Potentiometry on pentacene OFETs: Charge carrier mobilities and injection barriers in bottom and top contact configurations

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2008
R. Scholz
Abstract In a combination of experimental techniques including electrical probes, potentiometry, and charge transient spectroscopy (QTS), we develop concepts how to quantify the potential drops at the contacts, the mobility in the channel region, and the density of states of deep traps in pentacene OFETs. For OFETs grown from unpurified pentacene on pre-patterned Au bottom contacts, a comparison between potentiometry and two-dimensional device simulations determines an injection barrier of 0.73 eV at the source contact and a hole mobility of 0.014 cm2 V,1 s,1 in the pentacene channel. Temperature-dependent QTS data reveal a trap level at about 125 meV from the hole transport band, indicating a relatively high density of unintentional dopants and therefore a high background density of majority charge carriers. In OFETs grown from purified pentacene onto a SiO2 gate dielectric and Au top contacts evaporated onto the pentacene channel without breaking the vacuum, potentiometry reveals a nearly perfect alignment of the metal work function with the hole transport level in the organic layer. The much lower density of deep traps in these samples raises the hole mobility to the range 0.1,0.2 cm2 V,1 s,1. A further improvement of the hole mobility and the resulting device performance can be achieved by a chemical treatment of the gate oxide with n-octadecytrichlorosilane (OTS). (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Thin-Film Transistors: Transparent Photo-Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer (Adv. Funct.

ADVANCED FUNCTIONAL MATERIALS, Issue 5 2009
Mater.
On page 726, Minsuk Oh and co-workers describe the fabrication of a transparent complementary thin-film transistor inverter with a ZnO top gate and bottom gate of pentacene channels. Twelve nanometer-thin organic,inorganic hybrid dielectric layers with high capacitance are adopted to allow the ZnO and pentacene transistors to operate under only 3 V, and the inverter action appears very stable even under a few mW of white light. This discovery could herald the arrival of a new type of transparent logic device. [source]