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Passive Devices (passive + device)
Selected AbstractsA domain decomposition technique for finite element based parametric sweep and tolerance analyses of microwave passive devicesINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 3 2009Giacomo Guarnieri Abstract A domain decomposition approach is here applied to the finite element solution of a multiport waveguide passive device. The approach allows separating the problem in multiple, coupled subproblems which can be solved individually. By appropriately defining one of these subdomains as containing all the possible variations to be studied it is hence possible to restrict the tolerance analysis to this latter, smaller domain. Numerical results showing the gain in computing time are presented. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009. [source] Parallel computation of arbitrarily shaped waveguide modes using BI-RME and Lanczos methodsINTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN BIOMEDICAL ENGINEERING, Issue 4 2007A. M. Vidal Abstract This paper is devoted to the parallelization of a new method for solving large, structured eigenvalue problems, which appear in the electromagnetic modal analysis of arbitrarily shaped waveguides, typically present in many modern passive devices. This new method, based on the boundary integral-resonant mode expansion (BI-RME) technique and in the Lanczos method (for solution of the eigenvalue problem), was recently proposed by the authors, showing important advantages in terms of CPU time and memory over previously used solutions. As it will be fully described in this paper, the parallel version of such a new method allows further important savings in the overall CPU computation time. Comparative benchmarks and scalability issues related to the implemented parallel algorithm are discussed. Copyright © 2006 John Wiley & Sons, Ltd. [source] A domain decomposition technique for finite element based parametric sweep and tolerance analyses of microwave passive devicesINTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, Issue 3 2009Giacomo Guarnieri Abstract A domain decomposition approach is here applied to the finite element solution of a multiport waveguide passive device. The approach allows separating the problem in multiple, coupled subproblems which can be solved individually. By appropriately defining one of these subdomains as containing all the possible variations to be studied it is hence possible to restrict the tolerance analysis to this latter, smaller domain. Numerical results showing the gain in computing time are presented. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009. [source] A flexible RF transmitter module based on flexible printed circuit board by using micro-machining fabrication processMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 12 2010Seong-Sik Myoung Abstract This article presents a flexible RF transmitter module based on flexible printed circuit board (FPCB). The polyimide with micro-machining fabrication technique is employed for realization of FPCB to achieve the high flexibility as well as low loss at microwave frequency band. The active devices in the proposed flexible RF transmitter are design with InGaP/GaAs hetero-junction bipolar transistor monolithic microwave integrated circuit process, and the passive devices such as the filter and interconnection lines are fully integrated on the FPCB board to avoid use of external off-chip components for maximized flexibility. The FPCB transmitter module is designed for a short-distance sensor network based on OFDM communication system, and the measured conversion gain and error vector magnitude of the fabricated flexible transmitter are 27 dB and ,32 dB, respectively. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2636,2639, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25572 [source] High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applicationsMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2010Cong Wang Abstract In this letter, an advanced SI-GaAs-based manufacturing process is presented for creating high quality, cost effective, and compact size integrated passive devices. Through this advanced process, accurate thin film resistors, high Q spiral inductors, and high yield/breakdown voltage metal-insulator-metal capacitors can be successfully realized. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 618,623, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25018 [source] |