Organic Electroluminescent Device (organic + electroluminescent_device)

Distribution by Scientific Domains


Selected Abstracts


White-Light Emission from a Single-Emitting-Component Organic Electroluminescent Device,

ADVANCED MATERIALS, Issue 17 2004
Y. Li
Three-layer electroluminescent devices fabricated from 1,3,5-tris(2-(9-ethylcarbazyl-3)ethylene) benzene (TECEB) (see Figure) are shown to exhibit bright and efficient white light with a maximum luminescence and current efficiency of 1200,cd,m,2 and 1.1,cd,A,1, respectively. It is suggested that these represent the best reported results for single-emitting-component white electroluminescent devices to date. [source]


Synthesis of N,N,N,,N,-Tetrasubstituted 1,3-Bis(4-aminophenyl)azulenes and Their Application to a Hole-Injecting Material in Organic Electroluminescent Devices.

CHEMINFORM, Issue 8 2007
Masamichi Ikai
Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF. [source]


Thermal properties of conduction current and carrier behavior in an organic electroluminescent device

ELECTRONICS & COMMUNICATIONS IN JAPAN, Issue 3 2009
Masahiro Minagawa
Abstract Organic electroluminescent device (OLED) was fabricated using a vacuum evaporation method and thermal properties were investigated. The OLED has an indium tin oxide (ITO)/N,N,-diphenyl- N,N,-bis(3-methylphenyl)-1,1,-biphenyl-4,4,-diamine (TPD)/tris(8-hydroxyquinoline) aluminum (Alq)/lithium fluoride (LiF)/aluminum (Al) structure. An electron-dominant device of Al/Alq/LiF/Al structure, or a hole-dominant device of ITO/TPD/Al structure was also fabricated in order to study the carrier behavior in the OLEDs. The current density versus voltage (J,V) properties with various thickness of organic layers were investigated in both electron- and hole-dominant devices, and the thermal dependence of J,V properties was observed in the devices. At room temperature, conductions in a wide current region were considered to be due to space-charge-limited current for all of the devices. Especially for the Al/Alq/LiF/Al device and the OLED, relationships were observed across a wide current region. At low temperature, tunnel currents were estimated for the ITO/TPD/Al device. For the Al/Alq/LiF/Al device and the OLED, relationships were observed across a wide current region at low temperature. 2009 Wiley Periodicals, Inc. Electron Comm Jpn, 92(3): 24,31, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10048 [source]


Organic electroluminescent devices using europium complex-doped poly(N -vinylcarbazole)

POLYMERS FOR ADVANCED TECHNOLOGIES, Issue 6 2004
Tingxi Li
Abstract Electroluminescence (EL) properties of europium (Eu) complex-doped poly(N -vinylcarbazole) (PVK) were investigated. A device structure of glass substrate/indium-tin oxide/hole-injection layer/Eu complex-doped PVK/hole-blocking layer/electron transport layer/electron-injection layer/Al was employed. Red emission originating from Eu complex was observed. Relatively high luminance of 50,cd/m2 and an efficiency of 0.2% were obtained. Copyright 2004 John Wiley & Sons, Ltd. [source]


Thermal properties of conduction current and carrier behavior in an organic electroluminescent device

ELECTRONICS & COMMUNICATIONS IN JAPAN, Issue 3 2009
Masahiro Minagawa
Abstract Organic electroluminescent device (OLED) was fabricated using a vacuum evaporation method and thermal properties were investigated. The OLED has an indium tin oxide (ITO)/N,N,-diphenyl- N,N,-bis(3-methylphenyl)-1,1,-biphenyl-4,4,-diamine (TPD)/tris(8-hydroxyquinoline) aluminum (Alq)/lithium fluoride (LiF)/aluminum (Al) structure. An electron-dominant device of Al/Alq/LiF/Al structure, or a hole-dominant device of ITO/TPD/Al structure was also fabricated in order to study the carrier behavior in the OLEDs. The current density versus voltage (J,V) properties with various thickness of organic layers were investigated in both electron- and hole-dominant devices, and the thermal dependence of J,V properties was observed in the devices. At room temperature, conductions in a wide current region were considered to be due to space-charge-limited current for all of the devices. Especially for the Al/Alq/LiF/Al device and the OLED, relationships were observed across a wide current region. At low temperature, tunnel currents were estimated for the ITO/TPD/Al device. For the Al/Alq/LiF/Al device and the OLED, relationships were observed across a wide current region at low temperature. 2009 Wiley Periodicals, Inc. Electron Comm Jpn, 92(3): 24,31, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10048 [source]