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Orientation Relationships (orientation + relationships)
Selected AbstractsOxide layer dissolution in Si/SiOx/Si wafer bonded structuresCRYSTAL RESEARCH AND TECHNOLOGY, Issue 10 2009N. Zakharov Abstract The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are seperated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si(Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si(Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] New approach to twin interfaces of modulated martensiteJOURNAL OF APPLIED CRYSTALLOGRAPHY, Issue 3 2010Zongbin Li In Ni,Mn,Ga ferromagnetic shape memory alloys, the crystallographic nature of martensitic variant interfaces is one of the key factors governing the variant reorientation through field-induced interface motion and hence the shape memory performance. So far, the crystal structure studies of these materials , conducted by means of transmission electron microscopy , have suffered from uncertainties in determining the number of unit cells of modulated superstructure, and consequently improper interpretations of orientation correlations of martensitic variants. In this paper a new approach is presented for comprehensive analysis of crystallographic and morphological information of modulated martensite, using automated electron backscatter diffraction. As a first attempt, it has been applied for the unambiguous determination of the orientation relationships of adjacent martensitic variants and their twin interface characters in an incommensurate 7M modulated Ni,Mn,Ga alloy, from which a clear and full-featured image of the crystallographic nature of constituent twin interfaces is built up. Certainly, this new approach will make it feasible not only to generalize the statistical analysis of martensitic variant distributions for various materials with modulated superstructure, but also to give insight into the crystallographic characteristics of martensitic variant interfaces and the variant reorientation mechanism of new advanced materials for interface engineering. [source] Orientation and Phase Relationships between Titania Films and Polycrystalline BaTiO3 Substrates as Determined by Electron Backscatter Diffraction MappingJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 9 2010Nina V. Burbure Titania films have been grown on polycrystalline BaTiO3 (BTO) substrates at 700°C by pulsed laser deposition. Electron backscatter diffraction (EBSD) was used to determine grain orientations in the substrate before growth, and the phase and orientation of the supported films after growth. All BaTiO3 grains within 26° of (001) were covered by anatase films with an orientation relationship of (001)Anatase||(001)BTO and [100]Anatase||[100]BTO. Rutile with a variety of orientations grew on BaTiO3 grains with orientations closer to (110) and (111). EBSD mapping provides an efficient means for determining phase and orientation relationships of films over all orientation parameters. [source] Magnetic and electrical properties of BiMnO3 thin filmsPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2007M. Grizalez Abstract BiMnO3 thin films were deposited on single-crystal (001)-oriented SrTiO3 substrates by rf-magnetron sputtering method. X-ray diffraction was used to analyze the crystal structure of the thin films, indicating that the films were monoclinic with two dominant orientation relationships along the substrate. The first is (111) BiMnO3 , (001) SrTiO3; the second is (222) BiMnO3 , (002) SrTiO3; other peaks showed that the films were polycrystalline. The roughness of the films was characterized by AFM. R vs. T was measured from 390 K to 15 K using a Keithley Model 167 Programmable Electrometer. Magnetic characterization was carried out by using a quantum designÔ magnetometer for magnetization versus temperature and for hysteresis loops at different temperatures. The saturation magnetic moment of 2.8,B per Mn ion (still fairly smaller than that of the bulk, 3.6,B) was observed at 5 K decreasing with increasing temperature. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] |