Nitride Semiconductors (nitride + semiconductor)

Distribution by Scientific Domains


Selected Abstracts


Optimization of AlGaN/GaN HEMTs for high frequency operation

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 7 2006
T. Palacios
In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure , shown schematically and in a scanning electron microscopy image , with the band diagram of the sample with an InGaN back-barrier used to increase the electron confinement in comparison to a standard HEMT. The first author, Tomás Palacios, is currently a Project Scientist at UCSB. His research interest focuses on the search of novel GaN-based transistors for mm-wave applications and biological sensors. He is one of the winners of the physica status solidi Young Researcher Awards for his outstanding presentation at the 6th International Conference on Nitride Semiconductors held in Bremen, Germany, in 2005. Further articles from ICNS-6 will also be published in phys. stat. sol. (b) 243, No. 7 (2006) and phys. stat. sol. (c) 3, No. 6 (2006). The present issue of phys. stat. sol. (a) as well as phys. stat. sol. (c) 3, No. 5 (2006) also contain papers presented at the International Conference on Nanoscale Magnetism (ICNM-2005) in Gebze, Turkey. [source]


Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 7 2006
M. Drakopoulos
The cover picture from the article [1] depicts the geometry of X-ray diffraction on a GaN/sapphire structure made by a two-step epitaxial lateral overgrowth (2S-ELO) process. Below, the X-ray rocking curve as a function of the vertical beam position in 2S-ELO GaN/sapphire is shown. A low intensity line diverging from the main peak position (arrow) may be interpreted as the disappearance of a winged crystal region due to dislocation curvature. This paper is a presentation from the 6th International Conference on Nitride Semiconductors held in Bremen, Germany, in 2005. Further articles from ICNS-6 are also being published in phys. stat. sol. (a) 203, No. 7 (2006) and phys. stat. sol. (c) 3, No. 6 (2006). [source]


Nitrides as spintronic materials

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 2 2003
Tomasz Dietl
The Guest Editors of the Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS-5), Hiroshi Amano and Takashi Udagawa, have nominated the invited presentation by Tomasz Dietl [1] as Editor's Choice of the present issue of physica status solidi (b). This paper is a progress report on spintronics-related issues in Mn-based III-nitrides as potential diluted magnetic semiconductors. The cover picture shows the computed values of the Curie temperature for various p-type III,V compounds containing 5% of Mn in the S = 5/2 high spin state and 3.5 × 1020 holes per cm3, predicting that TC should exceed room temperature in the Mn-based nitrides. Thomas Dietl is head of the Low-Temperature Physics Group and professor at the Institute of Physics of the Polish Academy of Sciences. He is one of the most experienced researchers in the area of ferromagnetic semiconductors, spin-related phenomena and other current topics of semiconductor physics with many publications and invited talks at conferences and seminars world-wide. The full Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS-5) are published in physica status solidi (c) , conferences and critical reviews, Vol. 0, No. 7 (November 2003) (ISBN 3-527-40489-9). Conference papers can also be found in phys. stat. sol. (a) 200, No. 1 (2003). [source]


Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS-5)

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
Hiroshi Amano
The Fifth International Conference on Nitride Semiconductors (ICNS-5) was held at Nara-Ken New Public Hall in Nara, Japan, 25,30 May 2003. This conference series focuses on recent advances in GaN and related materials. It covers scientific and technological developments associated with these materials, their processing and devices. The objective of this conference was to provide a forum for active nitride researchers to exchange their knowledge by presenting their latest results and by carrying out in-depth technical discussions. This conference followed the tradition of the four previous conferences and focused on all aspects of nitride semiconductor systems, which include compounds involving AlInGaN, GaNAsP, AlSiCN and other materials containing nitrogen as one of the major constituents. [source]


Proceedings of the International Workshop on Nitride Semiconductors (IWN 2002)

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2003
Axel Hoffmann
These proceedings contain papers presented at the International Workshop on Nitride Semiconductors (IWN 2002) which was held in Aachen, Germany, 22,25 July 2002. The objective of this workshop was to provide a forum for active nitride researchers to gather and promote scientific and technical discussions. It covered all aspects of nitride semiconductor systems such as AlInGaN, AlGaNAsP, and other materials containing nitrogen as one of the major constituents. [source]


Book Review: Nitride Semiconductors,Handbook on Materials and Devices.

CHEMPHYSCHEM, Issue 3 2004
Editors Pierre Rutherana, Jörg Neugebauer, Martin Albrecht
No abstract is available for this article. [source]


Ultrathin metal layers to convert surface polarity of nitride semiconductors

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 6 2005
T. Nakayama
Abstract The possibility of the surface-polarity conversion of AlN upon the deposition of ultrathin Al metal layers is investigated by the first-principles theoretical calculations. It is shown that, reflecting the crystal structures of underlying layers and the binding-energy difference between Al,N and Al,Al bonds, the surface-polarity conversion from N-face to Al-face polarity becomes possible only when the deposited Al metal layers have wurtzite structure and two-monolayer thickness. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


High-speed and high-frequency electron effects in nitride semiconductors for terahertz applications

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2005
K. W. Kim
Abstract We discuss the basic properties of the transient hot-electron transport and dynamic mobility in group-III nitrides under dominant electron,polar-optical-phonon scattering determining their capability for applications in THz frequency range. For bulk samples with high electron concentration, we provide the phase-plane analysis of the time-dependent transient transport and classification of different transient regimes depending on the initial conditions. The calculations predict a frequency interval with negative dynamic electron mobility where the amplification and generation of microwaves in THz frequency range is possible. For quantum-well heterostructures with low electron concentration under the streaming regime at moderate fields, we have revealed THz frequency windows of the negative microwave mobility, which enables the development of a tunable THz laser based on nitride quantum heterostructures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]