Home About us Contact
|
Home About us Contact | ||
|
|
||
Memory Applications (memory + application)
Selected AbstractsAtomic Layer Deposition of High- k Oxides of the Group 4 Metals for Memory Applications (Adv. Eng.ADVANCED ENGINEERING MATERIALS, Issue 4 2009Mater. The cover shows high temperature XRD patterns of a 5.8 nm thick HfO2 film and 7.3 nm yttrium-doped HfO2 grown by atomic layer deposition (ALD). More details can be found in the article of J. Niinistö et al. where recent development in ALD of high-k dielectric oxides for memory applications is reviewed on page 223. [source] Atomic Layer Deposition of High- k Oxides of the Group 4 Metals for Memory Applications,ADVANCED ENGINEERING MATERIALS, Issue 4 2009Jaakko Niinistö Abstract This paper reviews several high-k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi-layers in the form of nano-laminates are of interest.Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development. [source] High-Current-Density CuO x/InZnOx Thin-Film Diodes for Cross-Point Memory Applications,ADVANCED MATERIALS, Issue 16 2008Bo Soo Kang Room-temperature-deposited CuOxInZnOx thin-film heterojunction diodes show a high current density of 3.5,×,104,A cm,2 and a high on/off current ratio of 106 (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply. [source] Atomic Layer Deposition of High- k Oxides of the Group 4 Metals for Memory Applications (Adv. Eng.ADVANCED ENGINEERING MATERIALS, Issue 4 2009Mater. The cover shows high temperature XRD patterns of a 5.8 nm thick HfO2 film and 7.3 nm yttrium-doped HfO2 grown by atomic layer deposition (ALD). More details can be found in the article of J. Niinistö et al. where recent development in ALD of high-k dielectric oxides for memory applications is reviewed on page 223. [source] New Materials in Memory Development Sub 50,nm: Trends in Flash and DRAM,ADVANCED ENGINEERING MATERIALS, Issue 4 2009Karl Heinz Kuesters New materials are of key importance for scaling memories in the sub 50,nm generations. Currently high- k materials and metal gates are investigated for usage in Flash and DRAM memory. However, the requirements in the applications are different, leading to different material combinations. This paper gives an overview on new materials with focus on memory applications. [source] Spin-Coating-Derived Gold-Nanoparticle MemoryJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 10 2010Ching-Chich Leu A metal,oxide,semiconductor (MOS) capacitor embedded with gold nanoparticles (Au NPs) has been successfully fabricated by a spin-coating-derived chemical solution process. The colloidal synthesized Au NPs (,3.5 nm) were self-assembled to 3-aminopropyltrimethoxysilane-modified silicon oxide substrates. With the spin-coating process, Au NPs can be fabricated onto silicon oxide with a high packing density of 1.6 × 1012 cm,2 in a short processing time. The sol,gel-derived HfO2 layer, acting as a control oxide, was also spin coated to construct an Si/SiO2/Au NPs/HfO2 structure. This MOS structure showed good memory effect and retention properties. This study indicates that it is appropriate to utilize the spin-coating process in nanocrystal memory applications. [source] | ||||||||||