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Material Systems (material + system)
Selected AbstractsInvestigations on Nanolaminated TiZrN/CrN as a Tribological PVD Hard Coating for Incremental Sheet Forming Tools,ADVANCED ENGINEERING MATERIALS, Issue 8 2009Kirsten Bobzin PVD coated metal forming tools may enormously reduce tool and work piece wear, friction and forming capacities. A PVD deposited TiZrN/CrN + CrN material system is presented for application on incremental sheet forming tools. This work reports on coating process development and tribological investigations leading to a clear friction reduction and wear protection. [source] Tribology,Structure Relationships in Silicon Oxycarbide Thin FilmsINTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, Issue 5 2010Joseph V. Ryan Silicon oxycarbide is a versatile material system that is attractive for many applications because of its ability to tune properties such as chemical compatibility, refractive index, electrical conductivity, and optical band gap through changes in composition. One particularly intriguing application lies in the production of biocompatible coatings with good mechanical properties. In this paper, we report on the wide range of mechanical and tribological property values exhibited by silicon oxycarbide thin films deposited by reactive radio frequency magnetron sputtering. Through a change in oxygen partial pressure in the sputtering plasma, the composition of the films was controlled to produce relatively pure SiO2, carbon-doped SiC, and compositions between these limits. Hardness values were 8,20 GPa over this range and the elastic modulus was measured to be between 60 and 220 GPa. We call attention to the fit of the mechanical data to a simple additive bond-mixture model for property prediction. Tribological parameters were measured using a ball-on-disk apparatus and the samples exhibited the same general trends for friction coefficient and wear rate. One film is shown to produce variable low friction behavior and low wear rate, which suggests a solid-state self-lubrication process because of heterogeneity on the nanometer scale. [source] Accessing Time,Varying Forces on the Vibrating Tip of the Dynamic Atomic Force Microscope to Map Material CompositionISRAEL JOURNAL OF CHEMISTRY, Issue 2 2008Ozgur Sahin In dynamic atomic force microscopes the primary physical quantities being measured are the amplitude/phase or amplitude/frequency of the vibrating force probe. Topographic images with spatial resolutions down to the atomic scale can be obtained by mapping these measurements across the sample surface under feedback control. During the imaging process the vibrating tip is observing tip,sample interaction potentials (force,distance relationships) at every point on the surface. The interaction potential is a superposition of short- and long,distance interactions of various origins determined by the material compositions of the tip, sample, and the medium of imaging. In principle, measurement of tip,sample interaction potential should allow determination and mapping of material composition of the sample. However, a single measurement of amplitude/phase or amplitude/frequency in dynamic atomic force microscopes is not enough to characterize a complicated tip,sample interaction potential. Recent developments in the understanding of dynamics of the vibrating force probe (cantilever), together with specially designed cantilevers that utilize torsional vibrations in addition to conventional vertical vibrations, enable the recovery of tip,sample interaction potentials at a timescale less than a millisecond. Here, with theory and experiments, we discuss how these cantilevers recover the information about the tip,sample interaction forces and give an example of compositional mapping on a polymeric material system. [source] ZrW2O8,ZrO2 Continuous Functionally Graded Materials Fabricated by In Situ Reaction of ZrO2 and WO3JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 3 2010Li Sun ZrO2 powder and ZrO2+WO3 powder mixture were stacked, cocompacted, and cosintered in a cylindrical die, the processing steps commonly used to fabricate multilayer materials. The soak duration and the mass ratio among layers in the processing have been varied to yield a wide range of final sintered samples. At appropriate soak durations, the sintered samples resulted in continuous functionally graded materials (FGMs) made of ZrW2O8 and ZrO2. In other words, instead of the expected discrete, multiple-layered materials, the resulting samples are characterized by the axially, continuously varying physical properties. The continuous FGM structure is formed by several mechanisms: the balance between the reaction of ZrO2 and WO3 and the decomposition of ZrW2O8, as well as the sublimation and diffusion of WO3. The continuous FGMs can be utilized to reduce the thermal stress induced from a thermal gradient loading within a material system. This study shows that the processing steps typically used for multilayer FGMs can also be used to create continuous FGMs for some special material combinations. [source] Bi2O3,MoO3 Binary System: An Alternative Ultralow Sintering Temperature Microwave DielectricJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 10 2009Di Zhou Preparation, phase composition, microwave dielectric properties, and chemical compatibility with silver and aluminum electrodes were investigated on a series of single-phase compounds in the Bi2O3,MoO3 binary system. All materials have ultralow sintering temperatures <820°C. Eight different xBi2O3,(1,x)MoO3 compounds between 0.2,x,0.875 were fabricated and the associated microwave dielectric properties were studied. The ,-Bi2Mo2O9 single phase has a positive temperature coefficient of resonant frequency (TCF) about +31 ppm/°C, with a permittivity ,r=38 and Qf=12 500 GHz at 300 K and at a frequency of 6.3 GHz. The ,-Bi2Mo3O12 and ,-Bi2MoO6 compounds both have negative temperature coefficient values of TCF,,215 and ,,114 ppm/°C, with permittivities of ,r=19 and 31, Qf=21 800 and 16 700 GHz at 300 K measured at resonant frequencies of 7.6 and 6.4 GHz, respectively. Through sintering the Bi2O3,2.2MoO3 at 620°C for 2 h, a composite dielectric containing both , and , phase can be obtained with a near-zero temperature coefficient of frequency TCF=,13 ppm/°C and a relative dielectric constant ,r=35, and a large Qf,12 000 GHz is also observed. Owing to the frequent difficulty of thermochemical interactions between low sintering temperature materials and the electrode materials during the cofiring, preliminary investigations are made to determine any major interactions with possible candidate electrode metals, Ag and Al. From the above results, the low sintering temperature, good microwave dielectric properties, chemical compatibility with Al metal electrode, nontoxicity and price advantage of the Bi2O3,MoO3 binary system, all indicate the potential for a new material system with ultralow temperature cofiring for multilayer devices application. [source] Single impurity Anderson model and band anti-crossing in the Ga1,xInx Ny As1,y material systemPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2008Nikolaos Vogiatzis Abstract The role of the single-N impurity in the GaInNAs system is evaluated using the single impurity Anderson model. The N impurities can act either as scattering resonances or as bound states depending on their energy position. For the former case, using self-energy calculations and Matsubara Green's functions we investigate the nature of the mixed single-N state (energy broadening, shift). The effect of this interaction on the perturbed conduction subbands is also examined. The single impurity Anderson model results in a complex band structure. The real part of the band structure can be directly related to the dispersion obtained with the band anti-crossing model and is in very good agreement. The imaginary bandstructure contains further information about the mixing of the nitrogen state and the conduction band which is not contained within the band anti-crossing model. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Long-wavelength (, , 1.3 µm) InGaAlAs,InP vertical-cavity surface-emitting lasers for applications in optical communication and sensingPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 14 2006Markus-Christian Amann Abstract In this paper we present an overview of the properties and applications of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on the InGaAlAs,InP material system. With respect to significant temperature sensitivity of active material gain as well as insufficient thermal conductivity of InP-based epitaxial compound layers, the effective thermal heat management appears as a major issue for application suitable device performance. In this context, the incorporation of a buried tunnel junction (BTJ) in connection with improved heat sinking resembles a breakthrough for long-wavelength VCSELs. With the utilization of n-type spreading layers and consequently ultralow series resistances, BTJ-VCSELs exhibit sharply reduced excess heat generation. Furthermore, the BTJ-approach enables self-aligned optical and current confinement. A hybrid dielectric stack with Au-coating yields an improved thermal heatsinking. The current status of BTJ-VCSELs encompasses a number of superior performance values. At 1.55 µm wavelength, this includes room temperature single- and multimode continuous wave (cw) output powers of more than 3 mW and 10 mW, respectively, laser operation for heat sink temperatures well exceeding 100 °C, and optical data transmission rates up to 10 Gbit/s. The versatility of compound layer composition enables arbitrary emission wavelengths within a broad range of 1.3 and 2 µm. With respect to sensing applications, BTJ-VCSELs appear as ideal components for optical detection of infrared active gases. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Strain-engineered novel III,N electronic devices with high quality dielectric/semiconductor interfacesPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 1 2003M. Asif Khan Abstract Since the early demonstration of 2D-electron gas [M. A. Khan et al., Appl. Phys. Lett. 60, 3027 (1992)] and a heterojunction field effect transistor (HFET) [M. Asif Khan et al., Appl. Phys. Lett. 63, 1214 (1993)] in III,N materials, rapid progress has been made to improve the DC and RF performance of GaN,AlGaN based HFETs. Stable and impressive microwave powers as high as 4,8 W/mm have been reported for device operation frequencies from 10 to 35 GHz. The key reason for these high performance numbers is an extremely large sheet carrier densities (>1 × 1013 cm,2) that can be induced at the interfaces in III,N hetereojunction [A. Bykhovsk et al., J. Appl. Phys. 74, 6734 (1993); M. Asif Khan et al., Appl. Phys. Lett. 75, 2806 (1999)]. These are instrumental in screening the channel dislocations thereby retaining large room temperature carrier mobilities (>1500 cm2/Vs) and sheet resistance as low as 300 ,/sq. These numbers and the high breakdown voltages of the large bandgap III,N material system thus enable rf-power approximately 5,10 times of that possible with GaAs and other competitor's technologies. We have recently introduced a unique pulsed atomic layer epitaxy approach to deposit AlN buffer layers and AlN/AlGaN superlattices [J. Zhang et al., Appl. Phys. Lett. 79, 925 (2001); J. P. Zhang et al., Appl. Phys. Lett. 80, 3542 (2002)] to manage strain and decrease the dislocation densities in high Al-content III,N layers. This has enabled us to significantly improve GaN/AlGaN hetereojunctions and the device isolation. The resulting low defect layers are not only key to improving the electronic but also deep ultraviolet light-emitting diode devices. For deep UV LED's they enabled us to obtain peak optical powers as high as 10 mW and 3 mW for wavelengths as short as 320 nm and 278 nm. Building on our past work [M. Asif Khan et al., Appl. Phys. Lett. 77, 1339 (2000); X. Hu et al., Appl. Phys. Lett. 79, 2832 (2001)] we have now deposited high quality SiO2/Si3N4 films over AlGaN with low interface state densities. They have then been used to demonstrate III,N insulating gate transistors (MOSHFET (SiO2) and MISHFET (Si3N4) with gate leakage currents 4,6 order less than those for conventional GaN,AlGaN HFETs. The introduction of the thin insulator layers (less then 100 Å) under the gate increases the threshold voltage by 2,3 V. In addition, it reduces the peak transconductance gm. However the unity cut-off frequency, the gain and the rf-powers remain unaffected as the gm/Cgs (gate-source capacitance) ratio remains unchanged. In addition to managing the defects and gate leakage currents we have also employed InGaN channel double heterojunction structures (AlInGaN,InGaN,GaN) to confine the carriers thereby reducing the spillover into trappings states. These InGaN based MOS-DHFETs exhibited no current-collapse, extremely low gate leakage currents (<10,10 A/mm) and 10,26 GHz rf-powers in excess of 6 W/mm. We have also demonstrated the scalability and stable operation of our new and innovative InGaN based insulating gate heterojunction field effect transistor approach. In this paper we will review the III,N heterojunction field-effect transistors progress and pioneering innovations including the excellent work from several research groups around the world. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Analysis of minority carrier lifetime for InAlAs/InGaAs high electron mobility transistors by using 1.55-,m femto-second pulse laserPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 9 2008Hirohisa Taguchi Abstract The minority carrier lifetime (,) of High electron mobility transistors (HEMTs) made using the InAlAs/InGaAs material system lattice-matched to the InP substrate had been obtained from optical response measurements with a 1.55-,m femto-second pulse laser where the laser was illuminated onto the backside of a wafer. The drain current of HEMTs associated with the optical pulse was detected using a digitizing oscilloscope, and , was estimated from the exponential dependence of drain current on time. In our current investigation, we found that , is dominated by the following modes: (1) the amount of time required for holes to transit across the channel toward the source, and (2) the amount of time required for the holes accumulated in the source region to recombine with two-dimensional electron gas (2DEG) through the Auger mechanism. Because the sheet concentration (ps) of holes accumulated in source region is low at a low source-to-drain voltage (VDS), Auger recombination is not predominant, and , was only dominated by the hole transit time. At a high VDS, ps became high enough for Auger recombination to occur and dominate ,. Furthermore, we investigated the optical power dependence of , where the optical power was supplied in a continuous wave (CW) to generate photo-excited holes in a steady state. The value of , decreased monotonically as VDS increased and saturated in as little as 6x10,10 s when the optical power was increased. The theoretical investigation was made to understand this saturation phenomenon. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA-MBEPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2003F. Fedler Abstract High reflectivity (>90%) distributed Bragg reflectors (DBR) have been successfully produced utilizing the AlGaN/AlN material system. We present reflectivity and XRD data of Ga-polar AlxGa1,xN/AlN Bragg reflectors grown on sapphire. High peak reflectivities between 54% (5.5 period mirror) and 97% (25.5 period mirror) combined with large reflectivity FWHM of 30 nm have been found. All reflectors have been designed by ex-situ spectroscopic ellipsometry (SE) data of respective reference samples. [source] InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experimentsBELL LABS TECHNICAL JOURNAL, Issue 3 2009Nils Weimann The capacity of fiber-optic telecommunication systems can be increased by higher data rate signaling. We present key analog and digital circuits which find application as building blocks in future very high data rate systems. The circuits are fabricated in our indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The physical properties of the InP material system, notably high breakdown and high electron mobility, enable functions that are not accessible with current silicon-based high-speed technologies, including SiGe. Device and circuit results are presented, and we report on transmission system experiments conducted with these InP DHBT circuits. © 2009 Alcatel-Lucent. [source] Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic MaterialsADVANCED ENGINEERING MATERIALS, Issue 4 2009Thomas Mikolajick Abstract Solid state memories play an important role for the electronic systems used in today's information society. The classical approach of charge storage is expected to reach its physical scaling limits very soon. New storage effects are therefore receiving significant interest from industry and academia. In the paper we summarize recent results on resistive switching effects in inorganic materials obtained in the research groups of the authors. We discuss the implications of these results for the suitability of the investigated material systems as well as for the direction of further research. [source] Electrogelation for Protein AdhesivesADVANCED MATERIALS, Issue 6 2010Gary G. Leisk Novel electrochemical behavior of silk protein to generate an adhesive electrogel is reported. The biomimetic system demonstrates reversible adhesive properties (see image) and functions on both hydrated and dry surfaces. Further, the system utilizes all-biocompatible components and functions in an all-aqueous process at ambient conditions. Potential applications in medical devices and in environmentally compatible material systems are described. [source] Reliability of Organic Field-Effect TransistorsADVANCED MATERIALS, Issue 38-39 2009Henning Sirringhaus Abstract In this article, we review current understanding of the reliability of organic field-effect transistors, with a particular focus on degradation of device characteristics under bias stress conditions. We discuss the various factors that have been found to influence the operational stability of different material systems, including dependence on stress voltage and duty cycle, gate dielectric, environmental conditions, light exposure, and contact resistance. A key question concerns the role of extrinsic factors, such as oxidation or presence of moisture, and that of intrinsic factors, such as the inherent structural and electronic disorder that is present in thin organic semiconductor films. We also review current understanding of the microscopic defects that could play a role in charge trapping in organic semiconductors. [source] Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for NanowiresADVANCED MATERIALS, Issue 2 2009Brent A. Wacaser Abstract A review and expansion of the fundamental processes of the vapor,liquid,solid (VLS) growth mechanism for nanowires is presented. Although the focus is on nanowires, most of the concepts may be applicable to whiskers, nanotubes, and other unidirectional growth. Important concepts in the VLS mechanism such as preferred deposition, supersaturation, and nucleation are examined. Nanowire growth is feasible using a wide range of apparatuses, material systems, and growth conditions. For nanowire growth the unidirectional growth rate must be much higher than growth rates of other surfaces and interfaces. It is concluded that a general, system independent mechanism should describe why nanowires grow faster than the surrounding surfaces. This mechanism is based on preferential nucleation at the interface between a mediating material called the collector and a crystalline solid. The growth conditions used mean the probability of nucleation is low on most of the surfaces and interfaces. Nucleation at the collector-crystal interface is however different and of special significance is the edge of the collector-crystal interface where all three phases meet. Differences in nucleation due to different crystallographic interfaces can occur even in two phase systems. We briefly describe how these differences in nucleation may account for nanowire growth without a collector. Identifying the mechanism of nanowire growth by naming the three phases involved began with the naming of the VLS mechanism. Unfortunately this trend does not emphasize the important concepts of the mechanism and is only relevant to one three phase system. We therefore suggest the generally applicable term preferential interface nucleation as a replacement for these different names focusing on a unifying mechanism in nanowire growth. [source] Fabrication of a Multilayered Low-Temperature Cofired Ceramic Micro-Plasma-Generating DeviceINTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, Issue 6 2006Amanda Baker Plasma technology is currently being used in innumerable industrial applications. Some of the common uses of this technology include surface cleaning and treatment, sputtering and etching of semiconductor devices, excitation source for chemical analyses, cutting, environmental cleanup, sterilization, and phototherapy. The harsh conditions that these devices must endure require robust refractory materials systems for their fabrication and reliability. Low-temperature cofired ceramic (LTCC) material systems provide a durable and cost-effective platform for the manufacture of such devices, and allow for possible integration into meso-scale microsystems. Our designs are based on RF microstriplines that capacitively couple and ionize small gas discharge sites over the top electrode. In this paper, we have built several iterations of this micro-plasma generating device using LTCC material systems. The impact of electrode ink selection and processing, lamination methods, dielectric layer thickness, and electrode design has been investigated. Several micro-plasma-generating devices were then evaluated for power requirements, output stability, and long-term reliability. [source] Raman spectroscopy and molecular simulation investigations of adsorption on the surface of single-walled carbon nanotubes and nanospheresJOURNAL OF RAMAN SPECTROSCOPY, Issue 6 2007Maher S. Amer Abstract Raman spectroscopy has, for long, been utilized to investigate material systems on the micro and mesoscales. Recently, the technique has proven its ability in exploring systems on the nanoscale. In this paper, we review our recent work on the Raman investigation of molecular adsorption from liquid mixtures on surfaces of single-walled carbon nanotubes and fullerene nanospheres, emphasizing the following major research findings: the development of a Raman-based technique capable of sensing local chemical interactions on the surface of carbon nanotubes and spheres; the molecular simulation results supporting the Raman investigation; the possibility of creating mesostructures based upon mixtures of carbon nanotubes and nanospheres that are crucial for selective adsorption. The current findings represent a major new thrust for the development of new nanostructured materials with superior adsorption capabilities and unique applications. Copyright © 2007 John Wiley & Sons, Ltd. [source] Developments in Oxide Fiber CompositesJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 11 2006Frank W. Zok Prospects for revolutionary design of future power generation systems are contingent on the development of durable high-performance ceramic composites. With recent discoveries in materials and manufacturing concepts, composites with all-oxide constituents have emerged as leading candidates, especially for components requiring a long service life in oxidizing environments. Their insertion into engineering systems is imminent. The intent of this article is to present a synopsis of the current understanding of oxide composites as well as to identify outstanding issues that require resolution for successful implementation. Emphasis is directed toward material systems and microstructural concepts that lead to high toughness and long-term durability. These include: the emergence of La monazite and related compounds as fiber-coating materials, the introduction of the porous-matrix concept as an alternative to fiber coatings, and novel strategies for enabling damage tolerance while retaining long-term morphological stability. Additionally, materials and mechanics models that provide insights into material design, morphology evolution, and composite properties are reviewed. [source] A theoretical investigation of carrier and optical mode confinement in GaInNAs QWs on GaAs and InP substratesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2007B. Gönül Abstract Both carrier and optical mode confinements are the basic ingredients while designing the semiconductor quantum well lasers. The former strongly depends on the band offsets of the heterostructure and the latter is mainly associated with the difference in the refractive index between the wave guiding core and the cladding layers. It is known that refractive index strongly depends on the direct band gap of the semiconductor material and the band gap of the III-N-V semiconductor layer can be engineered by means of adding nitrogen into InGaAs. We investigate, in this work, the refractive indices and the corresponding optical confinement factors of the proposed III-N-V laser material systems on GaAs and InP substrates. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] A phenomenological study of the mechanical properties of long-fiber filled injection-molded thermoplastic compositesPOLYMER COMPOSITES, Issue 5 2000V. K. Stokes Tensile and flexural tests on specimens cut from rectangular injection-molded plaques show that long-fiber filled thermoplastic composites are complex, non-homogeneous, anistropic material systems. Like all fiber-filled materials, they exhibit through-thickness nonhomogeneity as indicated by differences between tensile and flexural properties. The in-plane orientation of fibers in through-thickness layers causes the material to have in-plane anisotropic properties. However, these long-fiber filled materials exhibit an unexpectedly large level of in-plane nonhomogeneity. Also, the effective mechanical properties of these materials are strongly thickness dependent. The thinnest plaques exhibit the largest differences between the flow and cross-flow tensile properties. These differences decrease with increasing thickness. A methodology for part design with this class of materials is discussed. [source] A micromechanical model for the elastic properties of semicrystalline thermoplastic polymersPOLYMER ENGINEERING & SCIENCE, Issue 3 2004X. Guan This paper presents a micromechanical analysis of the elastic properties of semicrystalline thermoplastic materials. A lamellar stack aggregate model reported in the literature is used to derive tighter bounds and a self-consistent scheme for the elastic modulus, and it is shown that the existing geometric models of the microstructures are not effective in predicting experimentally measured modulus of semicrystalline materials. Toward addressing this limitation, a model based on Mori-Tanaka's mean field theory is developed by treating the semicrystalline materials as short-fiber reinforced composites, in which the lamella crystalline phase is modeled as randomly embedded anisotropic ellipsoidal inclusions, and the amorphous phase as an isotropic matrix. The lamellae are characterized by two independent aspect ratios from three distinct geometric axes in general. Existing morphological studies on polyethylene (PE) and a syndiotactic polystyrene (sPS) are used to deduce the corresponding lamella aspect ratios, based on which the theoretical model is applied to predict the elastic modulus of the two material systems. The model predictions are shown to compare well with the reported measurements on the elastic moduli of PE and sPS. Polym. Eng. Sci. 44:433,451, 2004. © 2004 Society of Plastics Engineers. [source] From carbon nanotube coatings to high-performance polymer nanocompositesPOLYMER INTERNATIONAL, Issue 4 2008Stéphane Bredeau Abstract Since their discovery at the beginning of the 1990s, carbon nanotubes (CNTs) have been the focus of considerable research by both academia and industry due to their remarkable and unique electronic and mechanical properties. Among numerous potential applications of CNTs, their use as reinforcing materials for polymers has recently received considerable attention since their exceptional mechanical properties, combined with their low density, offer tremendous opportunities for the development of fundamentally new material systems. However, the key challenge remains to reach a high level of nanoparticle dissociation (i.e. to break down the cohesion of aggregated CNTs) as well as a fine dispersion upon melt blending within the selected matrices. Therefore, this contribution aims at reviewing the exceptional efficiency of CNT coating by a thin layer of polymer as obtained by an in situ polymerization process catalysed directly from the nanofiller surface, known as the ,polymerization-filling technique'. This process allows for complete destructuring of the native filler aggregates. Interestingly enough, such surface-coated carbon nanotubes can be added as ,masterbatch' in commercial polymeric matrices leading to the production of polymer nanocomposites displaying much better thermomechanical, flame retardant and electrical conductive properties even at very low filler loading. Copyright © 2007 Society of Chemical Industry [source] Identification of candidate material systems for quantum dot solar cells including the effect of strainPROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 4 2010Som N. Dahal Abstract Heterostructures that include self-assembled quantum dots (SAQDs) have been suggested as model systems for the realization of novel high efficiency solar cells such as those based on intermediate bands (IBs). The lattice mismatch in the epitaxial growth of these structures, necessary for the formation of SAQDs, introduces strain throughout the structure, making the selection of materials systems with appropriate physical parameters problematic. The model solid theory is used to calculate the energy band edge alignment at , point of such quantum dot (QD) heterostructures including the effects of strain. With the modified band gaps due to strain, a materials search was performed for high efficiency QD solar cells among III-V binaries and ternaries with negligible valence band offsets. This requirement of the valence band offset along with the limited band gap ranges for optimum efficiency results in only a few feasible materials systems being identified. The optimum barrier/dot material system found was Al0.57In0.43As/InP0.87Sb0.13 grown on lattice matched metamorphic buffer layer, but due to miscibility gap concerns it is suggested that the Al0.50In0.50As/InAs0.41P0.59 fully strained system may be preferred. Copyright © 2010 John Wiley & Sons, Ltd. [source] Parallel Processing: Design /PracticeARCHITECTURAL DESIGN, Issue 5 2006David Erdman Abstract In the late 1990s servo emerged as a young design collaborative embracing new forms of distributed practice as enabled by the advent of telecommunications technologies. In this section, David Erdman, Marcelyn Gow, Ulrika Karlsson and Chris Perry write about how these organisational principles are at work not only in the context of their practice, but in the design work itself, which stretches across a variety of design disciplines to incorporate areas of expertise particular to information and interaction design, as well as a number of manufacturing and fabrication technologies. Many of servo's projects have focused on small-scale interior infrastructures, typically in the form of gallery installations, furniture systems and exhibition designs. This particular scale has allowed the group to focus on the development of full-scale prototypes, exploring a wide range of potential innovations at the point of integration between various technological and material systems. Copyright © 2006 John Wiley & Sons, Ltd. [source] Material and digital design synthesisARCHITECTURAL DESIGN, Issue 2 2006Michael Hensel Abstract The advanced material and morphogenetic digital design techniques and technologies presented in this journal call for a higher level methodological integration, which poses a major challenge for the next generation of multidisciplinary architectural research and projects. This collaborative task encompasses the striving for an integrated set of design methods, generative and analytical tools and enabling technologies that facilitate and instrumentalise evolutionary design, and evaluation of differentiated material systems towards a highly performative and sustainable built environment. Michael Hensel and Achim Menges describe recent progress towards a higher-level design synthesis of material self-organisation, digital morphogenesis, associative parametric modelling and computer-aided manufacturing (cam) on the basis of two works produced within the context of the Emergent Technologies and Design Masters programme at the Architectural Association in London, and a recent competition entry by Scheffler + Partner Architects and Achim Menges. Copyright © 2006 John Wiley & Sons, Ltd. [source] Particle-Stabilized Materials: Particle-Stabilized Materials: Dry Oils and (Polymerized) Non-Aqueous Foams (Adv. Funct.ADVANCED FUNCTIONAL MATERIALS, Issue 5 2010Mater. On page 732, Dr. R. Murakami and Professor A. Bismarck describe the synthesis of three different materials systems based on the mechanism of adsorption of colloidal particles at air,oil surfaces. Their inside cover images shows squalane drops stabilized against coalescense by assemblies of tetrafluoroethylene oligomer particles. These particle assemblies result in the formation of a metastable Cassie,Baxter wetting state, causing the oil drops to change in behavior from wet particles to dry free-flowing materials. [source] Voxel-based meshing and unit-cell analysis of textile compositesINTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING, Issue 7 2003Hyung Joo Kim Abstract Unit-cell homogenization techniques are frequently used together with the finite element method to compute effective mechanical properties for a wide range of different composites and heterogeneous materials systems. For systems with very complicated material arrangements, mesh generation can be a considerable obstacle to usage of these techniques. In this work, pixel-based (2D) and voxel-based (3D) meshing concepts borrowed from image processing are thus developed and employed to construct the finite element models used in computing the micro-scale stress and strain fields in the composite. The potential advantage of these techniques is that generation of unit-cell models can be automated, thus requiring far less human time than traditional finite element models. Essential ideas and algorithms for implementation of proposed techniques are presented. In addition, a new error estimator based on sensitivity of virtual strain energy to mesh refinement is presented and applied. The computational costs and rate of convergence for the proposed methods are presented for three different mesh-refinement algorithms: uniform refinement; selective refinement based on material boundary resolution; and adaptive refinement based on error estimation. Copyright © 2003 John Wiley & Sons, Ltd. [source] Fabrication of a Multilayered Low-Temperature Cofired Ceramic Micro-Plasma-Generating DeviceINTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, Issue 6 2006Amanda Baker Plasma technology is currently being used in innumerable industrial applications. Some of the common uses of this technology include surface cleaning and treatment, sputtering and etching of semiconductor devices, excitation source for chemical analyses, cutting, environmental cleanup, sterilization, and phototherapy. The harsh conditions that these devices must endure require robust refractory materials systems for their fabrication and reliability. Low-temperature cofired ceramic (LTCC) material systems provide a durable and cost-effective platform for the manufacture of such devices, and allow for possible integration into meso-scale microsystems. Our designs are based on RF microstriplines that capacitively couple and ionize small gas discharge sites over the top electrode. In this paper, we have built several iterations of this micro-plasma generating device using LTCC material systems. The impact of electrode ink selection and processing, lamination methods, dielectric layer thickness, and electrode design has been investigated. Several micro-plasma-generating devices were then evaluated for power requirements, output stability, and long-term reliability. [source] Solid-State Ionics: Roots, Status, and Future ProspectsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 7 2002Philippe Knauth This review represents the authors' view of the evolution of solid-state ionics over approximately the past 100 years. A brief history, introducing milestones of the development of this discipline, is followed by a short summary of the theory of ionic conduction in the bulk and the more recently developed theory of ionic conduction at interfaces. The central part of the article gives examples of ionic-conducting materials systems with structures ranging from one- to three-dimensional disorder. Important experimental techniques for analyzing ionic conduction, including alternating-current impedance spectroscopy, direct-current coulometry, and direct-current current-voltage measurements with blocking electrodes, are also summarized. The main technological applications, that is, batteries, solid-oxide fuel cells, electrochemical sensors, electrochromic windows, and oxygen-separation membranes, are reviewed. Finally, new concepts in solid-state ionics are presented, including the investigation of new materials (such as nanostructured phases), the study of boundaries (for example, using microelectrodes), the development of computational techniques, and the connections with other classes of materials (notably magnetic and semiconducting materials). [source] Origins and Applications of London Dispersion Forces and Hamaker Constants in CeramicsJOURNAL OF THE AMERICAN CERAMIC SOCIETY, Issue 9 2000Roger H. French The London dispersion forces, along with the Debye and Keesom forces, constitute the long-range van der Waals forces. London's and Hamaker's work on the point-to-point dispersion interaction and Lifshitz's development of the continuum theory of dispersion are the foundations of our understanding of dispersion forces. Dispersion forces are present for all materials and are intrinsically related to the optical properties and the underlying interband electronic structures of materials. The force law scaling constant of the dispersion force, known as the Hamaker constant, can be determined from spectral or parametric optical properties of materials, combined with knowledge of the configuration of the materials. With recent access to new experimental and ab initio tools for determination of optical properties of materials, dispersion force research has new opportunities for detailed studies. Opportunities include development of improved index approximations and parametric representations of the optical properties for estimation of Hamaker constants. Expanded databases of London dispersion spectra of materials will permit accurate estimation of both nonretarded and retarded dispersion forces in complex configurations. Development of solutions for generalized multilayer configurations of materials are needed for the treatment of more-complex problems, such as graded interfaces. Dispersion forces can play a critical role in materials applications. Typically, they are a component with other forces in a force balance, and it is this balance that dictates the resulting behavior. The ubiquitous nature of the London dispersion forces makes them a factor in a wide spectrum of problems; they have been in evidence since the pioneering work of Young and Laplace on wetting, contact angles, and surface energies. Additional applications include the interparticle forces that can be measured by direct techniques, such as atomic force microscopy. London dispersion forces are important in both adhesion and in sintering, where the detailed shape at the crack tip and at the sintering neck can be controlled by the dispersion forces. Dispersion forces have an important role in the properties of numerous ceramics that contain intergranular films, and here the opportunity exists for the development of an integrated understanding of intergranular films that encompasses dispersion forces, segregation, multilayer adsorption, and structure. The intrinsic length scale at which there is a transition from the continuum perspective (dispersion forces) to the atomistic perspective (encompassing interatomic bonds) is critical in many materials problems, and the relationship of dispersion forces and intergranular films may represent an important opportunity to probe this topic. The London dispersion force is retarded at large separations, where the transit time of the electromagnetic interaction must be considered explicitly. Novel phenomena, such as equilibrium surficial films and bimodal wetting/dewetting, can result in materials systems when the characteristic wavelengths of the interatomic bonds and the physical interlayer thicknesses lead to a change in the sign of the dispersion force. Use of these novel phenomena in future materials applications provides interesting opportunities in materials design. [source] | ||||||||||||||||||||||||||||||||||