Mg-doped InN (Mg-dop + inn)

Distribution by Scientific Domains


Selected Abstracts


Mg-doped InN and InGaN , Photoluminescence, capacitance,voltage and thermopower measurements

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2008
J. W. Ager III
Abstract The bandgap range of InGaN extends from the near-IR (InN, 0.65 eV) to the ultraviolet. To exploit this wide tuning range in light generation and conversion applications, pn junctions are required. The large electron affinity of InN (5.8 eV) leads to preferential formation of native donor defects, resulting in excess electron concentration in the bulk and at surfaces and interfaces. This creates difficulties for p-type doping and/or measuring of the bulk p-type activity. Capacitance,voltage measurements, which deplete the n-type surface inversion layer, have been used to show that Mg is an active acceptor in InN and Inx Ga1,xN for 0.2 < x < 1.0, i.e. over the entire composition range. Mg acceptors can be compensated by irradiation-induced native donors. Thermopower measurements were used to provide definitive evidence that Mg-doped InN has mobile holes between 200 K and 300 K. ( 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2008
Takao Miyajima
Abstract We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. ( 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Adduct formation of CP2Mg with NH3 in MOVPE growth of Mg-doped InN

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2007
Y. Nagai
Abstract The Mg doping for MOVPE InN has been studied using biscyclopentadienyllmagnesium CP2Mg as a Mg source. The InN samples grown near the upstream end of the 18 cm long susceptor have very small grain size and contain a high level of C and H contamination. The XPS analysis of the deposits obtained by the supply of CP2Mg together with NH3 reveals that new Mg compounds are formed near the upstream end of the susceptor. The new compounds are adducts of CP2Mg and NH3, because they can not be formed when only CP2Mg is supplied. The adduct formation seems to be a cause for the very small grain size and the high levels of C and H contamination. The adduct formation is suppressed at positions with a distance more than 9 cm from the upstream end. This means that designs of reactor and susceptor are very important for successful Mg doping of InN with CP2Mg. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]