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Light Generation (light + generation)

Distribution by Scientific Domains
Physics and Astronomy83%

Selected Abstracts

Generation of single photons and correlated photon pairs using InAs quantum dots

FORTSCHRITTE DER PHYSIK/PROGRESS OF PHYSICS, Issue 11-12 2004
C. Santori
This article reviews recent work on non-classical light generation using semiconductor quantum dots. Experimental results for single-photon generation are presented, including suppression of the two-photon probability, coherence properties and two-photon interference. An experiment demonstrating generation of polarization-correlated photon pairs from biexciton recombination is also reviewed. [source]

Harvesting Triplet Excitons from Fluorescent Blue Emitters in White Organic Light-Emitting Diodes,

ADVANCED MATERIALS, Issue 21 2007
G. Schwartz
A novel concept for white organic light emitting diodes (OLEDs) enabling the utilization of all electrically generated excitons for light generation is introduced. The key feature is a fluorescent blue emitter with high triplet energy, rendering it possible to harvest its triplet excitons by letting them diffuse to an orange phosphorescent iridium complex. [source]

Enhancement of luminescence in ZnMgO thin-film nanophosphors and application for white light generation

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2008
Santa Chawla
Abstract A series of ZnMgO thin-film nanophosphors with varied Zn:Mg ratio has been prepared by chemical bath deposition. The structure, photoluminescence, time-resolved decay and chromaticity of the films are presented. ZnMgO films absorb light efficiently in the near UV (330,400 nm) and the emission covers a large part of the visible spectrum. Luminescence enhancement is maximum for 25% Mg. All ZnMgO films show luminescence lifetimes in the microsecond range while low Mg content (0,10%) films also exhibit fast decay (10,10 s). Measured colorimetric coordinates of (0.28, 0.32) when excited by 350 nm light make them suitable for generation of white light in conjunction with near UV LEDs. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

White light generation through yellow nanophosphor and blue organic light-emitting diode

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 4 2009
Je Hong Park
Abstract White light-emitting device (WLED) combining yellow-emitting nanophosphor and blue organic light-emitting diode (LED) was developed. WLED was fabricated by using a spin-coating method. Yellow-emitting nanophosphor was dispersed in the blue-emitting polymer solution for spin-coating. As a variation of mixture ratio of yellow-emitting nanophosphor and blue-emitting polymer in emitting layer, the emission spectra were studied. Our white organic light-emitting device with 30% phosphor mixture ratio and at the driving voltage of 17 V showed the color coordinates of x = 0.266 and y = 0.33. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Mg-doped InN and InGaN , Photoluminescence, capacitance,voltage and thermopower measurements

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Issue 5 2008
J. W. Ager III
Abstract The bandgap range of InGaN extends from the near-IR (InN, 0.65 eV) to the ultraviolet. To exploit this wide tuning range in light generation and conversion applications, pn junctions are required. The large electron affinity of InN (5.8 eV) leads to preferential formation of native donor defects, resulting in excess electron concentration in the bulk and at surfaces and interfaces. This creates difficulties for p-type doping and/or measuring of the bulk p-type activity. Capacitance,voltage measurements, which deplete the n-type surface inversion layer, have been used to show that Mg is an active acceptor in InN and Inx Ga1,xN for 0.2 < x < 1.0, i.e. over the entire composition range. Mg acceptors can be compensated by irradiation-induced native donors. Thermopower measurements were used to provide definitive evidence that Mg-doped InN has mobile holes between 200 K and 300 K. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Prospects for a waveguide Raman amplifier in porous silicon at 1.5 ,m

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2009
Luigi Sirleto
Abstract Recently, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved significant results. However, limitations inherent to the physics of silicon have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. In this paper, an approach based on Raman scattering in porous silicon is investigated. First, we point out two significant advantages with respect to silicon: the broadening of the spontaneous Raman emission and the tuning of the Stokes shift. Then, we discuss about the prospect of Raman amplifier in porous silicon. Finally the design of a Raman amplifier in porous silicon waveguide is proposed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]