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LED Devices (lead + device)
Selected AbstractsFabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin FilmADVANCED MATERIALS, Issue 27 2009Xiao-Mei Zhang Bright n-ZnO nanowire/p-GaN film hybrid heterojunction light-emitting-diode (LED) devices are fabricated by directly growing n-type ZnO-nanowire arrays on p-GaN wafers. UV,blue electroluminescence emission was observed from the heterojunction diodes, and the heterojunction LED device exhibited a high sensitivity in responding to UV irradiation. [source] Nanostructuring of an AlGaInP light emitting diode for surface plasmon enhanced emission of light outputPHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 8 2008R. M. Perks Abstract This work describes a successful post fabrication method of applying a plasmonic grating to the surface of a mounted AlGaInP LED device. A Carl Zeiss 1540 XB Focused Ion beam system was used to mill holes in a thin gold layer with a periodicity of around 540 nm. Measurements of the total light output of the device compared with a standard un-textured device show that the plasmonic grating was found to significantly affect the light output characteristics such that the overall light output was reduced. This is attributed to the fact that only p-polarised light can interact with the hole array. Furthermore, the onset of saturation in the textured device was not evident as compared with the un-textured device. This is attributed to improved current spreading in the device due to the top gold layer. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] Synthesis and characterization of novel poly(arylenevinylene) derivativeJOURNAL OF APPLIED POLYMER SCIENCE, Issue 4 2008Song Se-Yong Abstract The new poly(arylenevinylene) derivative composed naphthalene phenylene vinylene backbone was developed. The theoretical calculation showed that the model compound of the obtained polymer was highly distorted between the stryl and naphthalene units as well as between the backbone and fluorene side units. The polymer was synthesized by the palladium catalyzed Suzuki coupling reaction with 2,6-(1,,2,-ethylborate)-1,5-dihexyloxynaphtalene and 1,2-bis(4,-bromophenyl)-1-(9,,9,-dihexyl-3-fluorenyl)ethene. The structure of the polymer was confirmed by 1H NMR, IR, and elemental analysis. The weight,average molecular weight of the polymer is 29,800 with the polydispersity index of 1.87. The new polymer showed good thermal stability with high Tg of 195°C. The bright blue fluorescence (,max = 475 nm) was observed both in solution and film of new polymer with naphthalene phenylene vinylene backbone. Double layer LED devices with the configuration of ITO/PEDOT/polymer/LiF/Ca/Al showed a turn-on voltage at around 4.5 V, the maximum luminance of 150 cd/m2, and the maximum efficiency of 0.1 cd/A. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008 [source] Improved EL efficiency of fluorene-thieno[3,2- b]thiophene-based conjugated copolymers with hole-transporting or electron-transporting units in the main chainJOURNAL OF POLYMER SCIENCE (IN TWO SECTIONS), Issue 1 2006Eunhee Lim Abstract New electroluminescent polymers (poly(9,9,-dioctylfluorene- co -thieno[3,2- b]thiophene- co -benzo[2,3,5]thiadiazole) (P1) and poly(9,9,-dioctylfluorene- co -thieno[3,2- b]thiophene- co -benzo[2,3,5]thiadiazole- co -[4-(2-ethylhexyloxyl)phenyl]diphenylamine (P2)) possess hole-transporting or electron-transporting units or both in the main chains. Electron-deficient benzothiadiazole and electron-rich triphenylamine moieties were incorporated into the polymer backbone to improve the electron-transporting and hole-transporting characteristics, respectively. P1 and P2 show greater solubility than poly(9,9,-dioctylfluorene- co -thieno[3,2- b]thiophene (PFTT), without sacrificing their good thermal stability. Moreover, owing to the incorporation of the electron-deficient benzothiadiazole unit, P1 and P2 exhibit remarkably lower LUMO levels than PFTT, and thus, it should facilitate the electron injection into the polymer layer from the cathode electrode. Consequently, because of the balance of charge mobility, LED devices based on P1 and P2 exhibit greater brightness and efficiency (up to 3000 cd/m2 and 1.35 cd/A) than devices that use the pristine PFTT. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 243,253, 2006 [source] Blue and red light combination LED phototherapy for acne vulgaris in patients with skin phototype IVLASERS IN SURGERY AND MEDICINE, Issue 2 2007Seung Yoon Lee MD Abstract Background and Objectives Blue light is effective for acne treatment, inducing photodynamic destruction of Propionibacterium acnes (P. acnes). This study was designed to investigate the efficacy of combined blue and red light-emitting diode (LED) phototherapy for acne vulgaris. Materials and Methods Twenty-four patients with mild to moderately severe facial acne were treated with quasimonochromatic LED devices, alternating blue (415 nm) and red (633 nm) light. The treatment was performed twice a week for 4 weeks. Objective assays of the skin condition were carried out before and after treatment at each treatment session. Clinical assessments were conducted before treatment, after the 2nd, 4th, and 6th treatment sessions and at 2, 4, and 8 weeks after the final treatment by grading and lesion counting. Results The final mean percentage improvements in non-inflammatory and inflammatory lesions were 34.28% and 77.93%, respectively. Instrumental measurements indicated that the melanin levels significantly decreased after treatment. Brightened skin tone and improved skin texture were spontaneously reported by 14 patients. Conclusion Blue and red light combination LED phototherapy is an effective, safe and non-painful treatment for mild to moderately severe acne vulgaris, particularly for papulopustular acne lesions. Lasers Surg. Med. 39:180,188, 2007. © 2007 Wiley-Liss, Inc. [source] Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodesPHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7-8 2010Dongpyo Han Abstract Current crowding effect is detrimental for the performance of light-emitting diodes (LEDs), causing non-uniform light emission and local heat generation. In particular, heat generated by non-uniform current distribution can badly influence the performance of LED devices. In this paper, we examine the temperature distributions of lateral InGaN/GaN multiple-quantum-well LEDs in relation to current crowding, using both simulation and experimental results. Simulation results are obtained from a 3-dimensional electrical circuit model consisting of resistances and intrinsic diodes. Temperature and luminance distributions are investigated by images taken by an infrared camera and a charge-coupled-device camera, respectively. Finally, the internal quantum efficiency is taken for each device and compared. We show that the thermal property in the lateral LED is affected by the current crowding due to the local Joule heating nearby electrodes. Therefore, uniform current spreading is very important not only for uniform luminance distribution but also for good thermal property in the LED device. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source] | |||||||||||||