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Inversion Domain Boundaries (inversion + domain_boundary)

Distribution by Scientific Domains

Physics and Astronomy	71%

Selected Abstracts

Direct Observation of Inversion Domain Boundaries of GaN on c -Sapphire at Sub-ångstrom Resolution,

ADVANCED MATERIALS, Issue 11 2008
Fude Liu
Inversion domain boundaries (IDBs) of GaN are studied by a high-resolution technique. The IDB separates adjacent domains of opposite polarity. The image shows a GaN IDB in the [bar;2110] projection. The theoretical IDB structure fits the experimentally obtained structure well. The inset is an image acquired from a very thin region on the right side of the IDB. It can indicate the polarity of GaN directly. [source]

Inversion domain boundaries in GaN studied by X-ray microprobe

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS, Issue 1-2 2010
Gema Martínez-Criado
Abstract In this study, we report on the application of synchrotron spectro-microscopic techniques to the examination of inversion domain boundaries formed intentionally in a GaN-based lateral polarity heterostructure. Using X-ray sub-microbeams, no evidence of field-driven electrodiffusion effects has been observed on spatially separated inversion domain boundaries. In addition, XANES data around the Ga K-edge strongly supported hexagonal Ga site configurations, suggesting high local order reconstruction. Based on inner-shell excited luminescence on the micrometer scale, the uniform spectral distribution of the radiative centers was discussed. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Polycrystalline GaN: Analysis of the Defects

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2003
G. Nouet
Abstract GaN polycrystalline layers were grown by ECR molecular beam epitaxy on quartz glass substrate. Strong photoluminescence emission was observed. Analysis of these layers was carried out by high resolution transmission electron microscopy. It is shown that the microstructure is characterised by a columnar growth with the ,0001, direction parallel to the growth direction. The mean size of the grains is in the range 30,50 nm. Sphalerite, cubic, and wurtzite, hexagonal, phases are observed, thus some defects such as basal stacking faults are present. Inversion domain boundaries are also formed. However, no threading dislocations within the grains are visible. [source]

Inversion domain boundaries in GaN studied by X-ray microprobe

Structural analysis of pyramidal defects in Mg-doped GaN

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2006
A. Pretorius
Abstract Pyramidal defects in GaN:Mg grown by metalorganic vapour phase epitaxy are studied by high resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. High resolution transmission electron microscopy images were simulated using the multislice approach in order to analyse the basal plane of the pyramidal defects. The simulated images were compared quantitatively with the experimental images. Two structural models for the basal plane inversion domain boundary containing antibixbyite-type layers are presented which show the best observed agreement with the experimentally found inversion domain boundary. Nevertheless, both models still do not match the experimental images satisfactorily, indicating that some other structure than antibixbyite is present at the boundary. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]