Interface Properties (interface + property)

Distribution by Scientific Domains


Selected Abstracts


Metal/Ceramic Interface Properties and Their Effects on SOFC Development

FUEL CELLS, Issue 6 2009
F. Tietz
Abstract Development of solid oxide fuel cells (SOFCs) involves multidisciplinary research, which needs input from many directions. As an example, this contribution describes the influence of basic metallurgical experiments on the selection or the modification of specific materials used in SOFCs. Wettability studies, although typically regarded as model experiments, give clear indications of the combinations of materials, which show better compatibility and might be more successfully integrated in SOFC designs, especially when metal/ceramic interfaces are involved. Various material combinations, i.e. anode cermets, glass/steel and ceramic/silver/steel compounds, are discussed in more detail showing the impact of fundamental studies on the SOFC development actually applied. This work gives a short overview on the basic aspects of selected material combinations. [source]


Interface properties and junction behavior of Pd contact on ZnO thin film grown by vacuum deposition technique

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010
Ghusoon M. Ali
Abstract In this paper we explain the results of our experimental investigation on interface properties and junction behavior of Pd contact on ZnO thin film based Schottky diode. We used a conventional vacuum evaporation deposition unit for sequential deposition of ZnO film and metallic layer. For the first time a high quality Pd/ZnO Schottky diode is fabricated successfully in our laboratory by vacuum evaporation method. The I-V and C-V characteristics of the devices were studied by using microprobe arrangement. The parameter such as ideality factor, leakage current, resistance-area-product, carrier concentration and barrier height were extracted from the measured data. The surface morphological and the structural properties of thin film were studied by atomic force microscope. The optical band gap of thin film was determined using UV-visible spectrophotometer. The device fabricated by a simple technique exhibited excellent stability for use as an electronic or optoelectronic component. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Interface Engineering of Inorganic Thin-Film Solar Cells , Materials-Science Challenges for Advanced Physical Concepts

ADVANCED MATERIALS, Issue 42 2009
Wolfram Jaegermann
Abstract The challenges and research needs for the interface engineering of thin-film solar cells using inorganic-compound semiconductors are discussed from a materials-science point of view. It is, in principle, easily possible to define optimized device structures from physical considerations. However, to realize these structures, many materials' limitations must be overcome by complex processing strategies. In this paper, interface properties and growth morphology are discussed using CdTe solar cells as an example. The need for a better fundamental understanding of cause,effect relationships for improving thin-film solar cells is emphasized. [source]


Long-Lifetime Polymer Light-Emitting Electrochemical Cells Fabricated with Crosslinked Hole-Transport Layers

ADVANCED MATERIALS, Issue 19 2009
Yan Shao
By inserting a crosslinkable hole-transport layer as the buffer layer between the single-phase polymer active layer and the anode of this new type of polymer light-emitting electrochemical cells (PLECs), the interface properties are improved and the PLECs can be operated with enhanced stability. [source]


Matrimid®/MgO mixed matrix membranes for pervaporation

AICHE JOURNAL, Issue 7 2007
Lan Ying Jiang
Abstract For the first time, porous Magnesium oxide (MgO) particles have been applied to generate mixed matrix membranes (MMM) for the dehydration of iso-propanol by pervaporation. A modified membrane fabrication procedure has been developed to prepare membranes with higher separation efficiency. FESEM and DSC characterizations confirm that the MMMs produced have intimate polymer/particle interface; the nanosize crystallites on MgO surface may interfere with the polymer chain packing and induce chains rigidification upon the particle surface. It is observed that Matrimid®/MgO MMMs generally have higher selectivity, but lower permeability relative to the neat Matrimid® dense membrane. The highest selectivity is obtained with MMM containing 15 wt. % MgO. The selective sorption and diffusion of water in the MgO particles, and the polymer/particle interface properties combine to lead to the earlier phenomena. The investigation on the effect of feed water composition on the pervaporation performance reveals that the addition of MgO can show the selectivity-enhancing effects if the feed water concentration is lower than 30 wt. %. In the dehydration of isopropanol aqueous solution with 10 wt. % water, the selectivity of the MMMs is around 2,000, which is more than twice of 900 of neat polymeric membrane. This makes MMMs extremely suitable for breaking the azeotrops of water/iso-propanol. Gas permeation tests are also conducted using O2 and N2 to determine the microscopic structure of the MMMs, and to investigate the relationship between pervaporation and gas separation performance. © 2007 American Institute of Chemical Engineers AIChE J, 2007 [source]


Interface properties and junction behavior of Pd contact on ZnO thin film grown by vacuum deposition technique

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 2 2010
Ghusoon M. Ali
Abstract In this paper we explain the results of our experimental investigation on interface properties and junction behavior of Pd contact on ZnO thin film based Schottky diode. We used a conventional vacuum evaporation deposition unit for sequential deposition of ZnO film and metallic layer. For the first time a high quality Pd/ZnO Schottky diode is fabricated successfully in our laboratory by vacuum evaporation method. The I-V and C-V characteristics of the devices were studied by using microprobe arrangement. The parameter such as ideality factor, leakage current, resistance-area-product, carrier concentration and barrier height were extracted from the measured data. The surface morphological and the structural properties of thin film were studied by atomic force microscope. The optical band gap of thin film was determined using UV-visible spectrophotometer. The device fabricated by a simple technique exhibited excellent stability for use as an electronic or optoelectronic component. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Polymerization compounding of HDPE/Kevlar composites.

POLYMER COMPOSITES, Issue 2 2006

The aim of this work is to perform the polymerization compounding to improve the properties of Kevlar/PE composites. The approach consists in involving the surface of a reinforcement in a polymerization process of a polymer to be used either as a matrix in the final composite or as a special surface treatment to enhance solid/polymer interface properties in the composite. The polymerization compounding process is illustrated here with the polyaramid fibers as reinforcements and polyethylene as a matrix. The number of active sites on the fiber surface, initially insufficient to anchor the catalyst, were increased by a hydrolysis reaction prior to the polymerization. The anchored catalyst was subsequently used to conduct the Ziegler,Natta polymerization reaction of ethylene. The modified fibers were incorporated into the polyethylene resin to produce composites at fiber concentrations as high as 15 wt%. The morphology of the fibers and the composites was tested using electron microscopy. Finally, the mechanical properties of the composites (in impact and tensile tests) were measured to characterize the properties of model composites. Polym. Compos. 27:129,137, 2006. © 2006 Society of Plastics Engineers. [source]


The effect of low pressure chemical vapor deposition of silicon nitride on the electronic interface properties of oxidized silicon wafers

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 5 2007
Hao Jin
Abstract The effect of LPCVD Si3N4 film deposition on oxidized Si wafers, to form Si3N4/SiO2/Si stacks, is studied using capacitance,voltage and carrier lifetime measurements. The deposition of a nitride film leads to an increase in the density of defects at the Si,SiO2 interface, with the increase being greater the thinner the oxide. However, even the presence of a very thin intermediate oxide results in a dramatic improvement in interface properties compared to the direct deposition of the Si3N4 film on Si. The interface degradation occurs in the initial stages of nitride film deposition and appears to be largely the result of increased interfacial stress. Subsequent thermal treatments do not result in significant further degradation of the Si,SiO2 interface (except for a loss of hydrogen), again in contrast to the case where the nitride films is deposited onto Si. Copyright © 2007 John Wiley & Sons, Ltd. [source]