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Interface Defects (interface + defect)

Distribution by Scientific Domains

Physics and Astronomy	80%

Selected Abstracts

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2008
A. Darga
Abstract Electrodeposited CuIn(S,Se)2 based solar cells with varying CdS buffer layer thicknesses were studied by admittance spectroscopy. An electrically active defect was identified. Its density of states which varies with CdS layer deposition process was found to be correlated with solar cell performance. This defect seems to be CdS/CuIn(S,Se)2 interface defect or to be located within the grain boundaries of the absorber layer. Direct dark I,V measurements reveal that the dominant recombination mechanism is a tunnelling assisted process. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Entanglement in fermionic chains with interface defects

ANNALEN DER PHYSIK, Issue 9 2010
V. Eisler
Abstract We study the ground-state entanglement of two halves of a critical transverse Ising chain, separated by an interface defect. From the relation to a two-dimensional Ising model with a defect line we obtain an exact expression for the continuously varying effective central charge which governs the asymptotic behaviour of the entanglement entropy. The result is relevant also for other fermionic chains. [source]

Smectic A liquid crystal configurations with interface defects

MATHEMATICAL METHODS IN THE APPLIED SCIENCES, Issue 7 2001
M. Carme Calderer
We study planar energy minimizing configurations of smectic A liquid crystal materials and classify the corresponding defect structures. We investigate focal conic configurations in wedge, non-parallel plates, funnel-shaped domains, and non-concentric annuli. The application of the stability condition for focal conics is relevant to the specification of the location of the interfacial defects. Self-similar structures are discussed for a class of solutions with the same bulk energy. We propose surface energies terms to serve as selection mechanisms of particular self-similar configurations. We also show how the modelling of chevron texture naturally arises in the present framework. Copyright © 2001 John Wiley & Sons, Ltd. [source]

Passivation study of the amorphous,crystalline silicon interface formed using DC saddle-field glow discharge

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2010
Barzin Bahardoust
Abstract The DC saddle-field (DCSF) glow discharge method was used to deposit intrinsic a-Si:H onto c-Si to passivate the c-Si surface. The effective minority carrier lifetime in the heterostructures as a function of the excess minority carrier density in the c-Si wafers was measured. The results were then analyzed in the context of recombination associated with interface defect states using three known recombination models. The defect density and the charge density at the interface are inferred. In addition subsequent annealing of the samples was studied. It is shown that for our intrinsic a-Si:H samples improvements in surface passivation are directly correlated with the reduction of interface defects and not the reduction of minority carrier concentration at the interface due to electric field. We have achieved excellent surface passivation with effective carrier lifetime >4,ms for an intrinsic a-Si:H sample deposited at a process temperature of 200,°C and thickness of about 30,nm. It is also demonstrated that subsequent annealing, at 240,°C, of the samples which were prepared at process temperatures <240,°C greatly increases the effective lifetime. [source]