			Home About us Contact

Integrated Circuit Technology (integrated + circuit_technology)

Distribution by Scientific Domains

Engineering	50%

Selected Abstracts

Using finite element method to calculate capacitance, inductance, characteristic impedance of open microstrip lines

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Issue 3 2008
Sarhan M. Musa
Abstract Microstrip transmission lines have received more interest and attention in microwave integrated circuit design. Analysis and electrical characterization of single and coupled microstrip lines have been a major focus for researchers in integrated circuit technology. In this article, we will illustrate modeling of the capacitance, inductance, and characteristic impedance of quasi-TEM for open microstrip lines using finite element method with COMSOL multiphysics package. In this work, we determine the capacitance per unit length, inductance per unit length, and characteristic impedance of open microstrip lines (single-strip, double strip, and three-strip). We compare our results with those obtained by other methods and found them to be in agreement. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 611,614, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23164 [source]

Extreme temperature 6H-SiC JFET integrated circuit technology

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 10 2009
Philip G. Neudeck
Abstract Extreme temperature semiconductor integrated circuits (ICs) are being developed for use in the hot sections of aircraft engines and other harsh-environment applications well above the 300 °C effective limit of silicon-on-insulator IC technology. This paper reviews progress by the NASA Glenn Research Center and Case Western Reserve University (CWRU) in the development of extreme temperature (up to 500 °C) integrated circuit technology based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs fabricated and packaged by NASA have now demonstrated thousands of hours of continuous 500 °C operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Design, modeling, and characterization of transistors and circuits at temperatures from 24 °C to 500 °C are also described. CWRU designs for improved extreme temperature SiC JFET differential amplifier circuits are demonstrated. Areas for further technology maturation, needed prior to beneficial system insertion, are discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]

Study of base series resistance losses in single and double emitter silicon solar cells through simulations and experiments

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Issue 7 2008
K. Kotsovos
Abstract This work focuses on base series resistance influence on the performance of single and double emitter rear point contact silicon solar cells. This study is performed through measurements on experimental devices with different rear contact sizes and spacings, which were designed and fabricated using standard silicon integrated circuit technology, while the results were compared with simulation data based on a 3D model developed at our institute. Simulation and experimental results show that the series resistance of the double junction structure is significantly lower compared to the single junction equivalent. In addition, it was demonstrated that the operation of both junctions under slightly different voltages improves device efficiency. Copyright © 2008 John Wiley & Sons, Ltd. [source]