InN Surface (inn + surface)

Distribution by Scientific Domains


Selected Abstracts


Impact of n-type doping on the terahertz surface emission from c -plane InN

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2010
V. M. Polyakov
Abstract We theoretically investigate the influence of n-type doping on the terahertz (THz) electric field emission from unbiased c -plane InN surfaces using the ensemble Monte Carlo (MC) method. It is shown that the increase of n-type doping has twofold effect on the THz surface emission. The detrimental effect of electron drift mobility decrease is compensated by doping-derived electrons constructively contributing to the total dynamic dipole responsible for a generation of the THz electric field pulse emission from InN surface. [source]


Doping-dependence of subband energies in quantized electron accumulation at InN surfaces

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2007
T. D. Veal
Abstract Electron tunnelling spectroscopy is used to investigate the quantized electron accumulation at the surfaces of wurtzite InN with different doping levels. The tunnelling spectra of InN-oxide-tip junctions recorded in air at room temperature exhibit a ,0.6 V plateau, corresponding to the band gap of InN, and a gap between onsets of 1.3 V, consistent with the separation between the valence band maximum and the pinned Fermi level at the oxidized InN surface. Also observed within the tunnelling spectra are additional features between the conduction band minimum and the pinned Fermi level. These features are attributed to surface-bound quantized states associated with the potential well formed by the downward band bending at the InN-oxide interface. Their energetic positions are dependent upon the doping level of the InN films and coincide with calculated subband energies. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Metastable cubic InN layers on GaAs (001) substrates grown by MBE: Growth condition and crystal structure

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue S2 2009
Sakuntam Sanorpim
Abstract Transmission electron microscopy and high resolution X-ray diffraction were applied to characterize the crystal structure and its modification in c-InN layers on GaAs (001) substrates grown by rf-plasma assisted molecular beam epitaxy. The layer quality was shown to depend on growth conditions, namely In- and N-rich conditions. The best quality of c-InN layers was achieved by "stoichiometric" growth under the In-rich condition, resulting in In-rich layers with a small amount of hexagonal-phase inclusion (,8%). On the other hand, nucleation and growth of N-rich layers are shown to result in a high density of stacking faults which drastically decreases toward the InN surface. It is argued that the presence of stacking faults contributes to the structural modification in these layers. We found that the existence of a structural modification from cubic to mixed cubic/hexagonal phase in microstructure of the N-rich layers exhibit higher hexagonal-phase incorporation than that of the In-rich layers. ( 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Impact of n-type doping on the terahertz surface emission from c -plane InN

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 6 2010
V. M. Polyakov
Abstract We theoretically investigate the influence of n-type doping on the terahertz (THz) electric field emission from unbiased c -plane InN surfaces using the ensemble Monte Carlo (MC) method. It is shown that the increase of n-type doping has twofold effect on the THz surface emission. The detrimental effect of electron drift mobility decrease is compensated by doping-derived electrons constructively contributing to the total dynamic dipole responsible for a generation of the THz electric field pulse emission from InN surface. [source]


Doping-dependence of subband energies in quantized electron accumulation at InN surfaces

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 2 2007
T. D. Veal
Abstract Electron tunnelling spectroscopy is used to investigate the quantized electron accumulation at the surfaces of wurtzite InN with different doping levels. The tunnelling spectra of InN-oxide-tip junctions recorded in air at room temperature exhibit a ,0.6 V plateau, corresponding to the band gap of InN, and a gap between onsets of 1.3 V, consistent with the separation between the valence band maximum and the pinned Fermi level at the oxidized InN surface. Also observed within the tunnelling spectra are additional features between the conduction band minimum and the pinned Fermi level. These features are attributed to surface-bound quantized states associated with the potential well formed by the downward band bending at the InN-oxide interface. Their energetic positions are dependent upon the doping level of the InN films and coincide with calculated subband energies. ( 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Surface treatment of GaN and InN using (NH4)2Sx

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 7 2003
T. Maruyama
Abstract The effects of (NH4)2Sx treatment on GaN and InN surfaces were investigated by X-ray photoelectron spectroscopy. It was found that native oxide layers were removed from nitride surfaces by HCl and (NH4)2Sx treatments and that S-terminated surface layers were formed. In addition, the S-terminated layer on the GaN surface was removed by H* irradiation. The usefulness of the combination of (NH4)2Sx treatment and post H* irradiation was shown. [source]