InN Quantum Dots (inn + quantum_dot)

Distribution by Scientific Domains


Selected Abstracts


Strain Mapping at the Atomic Scale in Highly Mismatched Heterointerfaces,

ADVANCED FUNCTIONAL MATERIALS, Issue 14 2007
M. Sánchez
Abstract A complete characterization of dislocation network in a highly mismatched interface with high spatial resolution has been performed. The interface between InN quantum dots and a (0001) GaN substrate contains three noninteracting sets of regularly-spaced misfit dislocations lying along <110> directions. The network has a "Star of David" form, with each star bounding a hexagonal region which is pseudomorphic. These misfit dislocations form a threading dislocation network at the island edges due to free surface forces. [source]


Wishful physics , some common misconceptions about InGaN

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Issue 3 2003
K. P. O'Donnell
Abstract All III,N visible light emitting devices contain ultrathin active layers of InGaN. Although this material has been widely studied during the last ten years or so, opinion is still divided as to its nature. Most researchers would agree with the proposition that III,nitride "alloys" are a mess, at least when compared with analogous III,As materials. It may be further argued that the quality of InGaN samples is at present too variable to allow general statements to be made about the material. We repudiate this misconception. The similarities between luminescent InGaN samples from different laboratories outweigh the differences. Any differences that do occur can be confidently accounted for, in terms of a peculiar growth habit of III,nitrides. We also briefly discuss the status of accidental InN quantum dots. [source]


Natural oxidation of InN quantum dots: the role of cubic InN

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 1 2010
David González
Abstract The natural aging process occured in indium nitride quantum dots (QDs) heterostructures as a consequence of exposure to the atmosphere has been studied by means of transmission electron microscopy and electron beam related techniques. The comparison between GaN-capped and uncapped InN QDs kept at room conditions during 36 months indicates the structural changes that take place. While the capping layer seems to act in a protective way avoiding any change in the QDs, the uncapped structures suffer a series of phase transformations, where the original wurtzite structure is replaced by a layer of cubic phases. The main constituent of this layer is shown to be bcc-In2O3 formed by the substitution of the nitrogen atoms by oxygen from the atmosphere. This supposes a transformation from a hexagonal to a cubic structure, explained by the existence of an oxygen-rich cubic InN acting as an intermediate phase. The difference in the formation enthalpy between the original and the final product, together with the good match between the crystals would explain this transformation that shows the high instability of InN at environmental conditions. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Strain-induced correlations between the phonon frequencies of indium nitride

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 6 2004
O. Briot
Abstract Using measurements of phonons frequencies in large size InN quantum dots deposited by Metal-organic vapor phase epitaxy, we found these frequencies to experience a blue shift with increasing compression. Next we show that all the phonon frequencies reported in the literature are correlated to the strain state of InN and are, within the experimental uncertainty, consistent with each other. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [source]


Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Issue 11 2006
S. Schulz
The cover picture of this issue of physica status solidi (c) has been taken from the article [1]. [source]